110 SOT23 Search Results

marking a38

Abstract: A36A A40 SOT23-5
Contextual Info: LMV101,LMV102,LMV105,LMV110 LMV101/102/105/110 Fixed-Gain Amplifiers Literature Number: SNOS494B LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors

BC847 SOT23

Abstract: BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A
Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 65 100 250 110 450 100 BC856 305 PNP COMPL. PAGE BC846 SOT23 BC846A SOT23 65 100 250 110 220 100 BC856A

sot23-5 marking A41

Abstract: "Microphone Preamplifier" SOT23 M7 "Fixed Gain Amplifiers" "Microphone Preamplifiers" LMV110 LMV321 SC70-5
Contextual Info: LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors and a V+/2 bias circuit into one ultra tiny package, SC70-5 or SOT23-5. Fixed inverting gains of −1, −2, −5, and −10 are

V04 SOT23-5

Abstract: SOT23 M7 sot23-5 A40 A36A LMV101 LMV102 LMV105 LMV110 LMV321 SC70-5
Contextual Info: LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors and a V+/2 bias circuit into one ultra tiny package, SC70-5 or SOT23-5. Fixed inverting gains of −1, −2, −5, and −10 are

Contextual Info: User's Guide SLVU689A – June 2011 – Revised September 2012 TPS709xxEVM-110 Evaluation Module This User’s Guide describes the operational use of the TPS709xxEVM-110 Evaluation Module EVM as a reference design for engineering demonstration and evaluation of the TPS709xx, low dropout linear

MCP6071

Abstract: ua 471 instrumentation amplifier mcp6071t-e difference between orcad pspice MCP6072 AN1332 MARKING CODE AHE MCP6071T MCP6071E
Contextual Info: MCP6071/2/4 110 µA, High Precision Op Amps Description Features • • • • • • • • Low Offset Voltage: ±150 µV maximum Low Quiescent Current: 110 µA (typical) Rail-to-Rail Input and Output Wide Supply Voltage Range: 1.8V to 6.0V Gain Bandwidth Product: 1.2 MHz (typical)

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

Transistor Arrays

Abstract: transistor SST 126 IMD6 transistor 136 138 140
Contextual Info: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD

MAX1683

Abstract: MAX1683EUK-T 593D MAX1682 MAX1682EUK-T
Contextual Info: 19-1305; Rev 1; 8/98 Switched-Capacitor Voltage Doublers _Features ♦ 5-Pin SOT23 Package ♦ +2.0V to +5.5V Input Voltage Range ♦ 98% Voltage-Conversion Efficiency ♦ 110µA Quiescent Current MAX1682 ♦ Requires Only Two Capacitors

FMMTA93

Abstract: FMMTA93R FMMTA42 FMMTA43 FMMTA92 FMMTA92R DSA003704
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA92 FMMTA93 ISSUE 3 - JANUARY 1996 PARTMARKING DETAILS: Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS f Transition Frequency MHz 60 V+-=10V 50 40 0.1 10 1.0 100 130 110 90 SOT23 PARAMETER

"Microphone Preamplifier"

Abstract: A35A diode dc components m7 footprint SOT23 M7 LMV101 LMV101M7X LMV102M7 LMV102M7X LMV110 LMV321
Contextual Info: ß a t i o n a l S e m i c o n d u c t o r LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LM V101/102/105/110 fixed-gain a m plifier fam ily inte­ grates a rail-to-rail op am p, tw o internal gain-setting resistors and a V+/2 bias circuit into one ultra tin y package, SC 70-5 or

EPA018A-SOT23

Contextual Info: Excelics EPA018A-SOT23 PRELIMINARY DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET • • • 110-120 15-20 27 SOURCE 2-4 DRAIN GATE 38 37-47 75.5 Top View All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PARAMETERS/TEST CONDITIONS

MCP6071

Abstract: MCP6071E MCP6074E MCP6071T MCP6074 SOIC-6 microchip MCP6072 AN990 mcp6071t-e R100-10
Contextual Info: MCP6071/2/4 110 µA 高精度运算放大器 概述 特性 • • • • • • • • 低失调电压： ±150 µV （最大值） 低静态电流： 110 µA （典型值） 轨到轨输入和输出 宽电源电压范围： 1.8V 至 6.0V 增益带宽积： 1.2 MHz （典型值）

2907 TRANSISTOR PNP

Abstract: MMBT2907 die 2907 pnp 2907a TRANSISTOR PNP MMBT2907A MMBT2907 2907 pnp transistor 2907A EQUIVALENT MMBT2907 ON 1N916 MMBT2222A
Contextual Info: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mechanical Data

3vf4

Contextual Info: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04)

1N916

Abstract: MMBT3904 MMBT3906
Contextual Info: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)

General Transistor

Abstract: 1N916 MMBT3904 MMBT3906
Contextual Info: General Purpose Transistor NPN COMCHIP www.comchiptech.com MMBT3904 NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH706D-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)

BAS16PT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS16PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * A6

CHN202KPT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN202KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 0.1 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * A4 CIRCUIT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHP203KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E6

Contextual Info: SN65LVDT14, SN65LVDT41 www.ti.com SLLS530 – APRIL 2002 MEMORY STICK INTERCONNECT EXTENDER CHIPSET WITH LVDS SN65LVDT14—ONE DRIVER PLUS FOUR RECEIVERS SN65LVDT41—FOUR DRIVERS PLUS ONE RECEIVER FEATURES D Integrated 110-Ω Nominal Receiver Line D D

MMBD914GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MMBD914GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * 2D

BD4148CGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BD4148CGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * 5J- CIRCUIT