110 TO 150 MHZ Search Results

QBH-110

Abstract: qbh-9
Contextual Info: Available as: QBH-110, 4 Pin TO-8 T4 QBH-9-110, Connectorized Housing (ES E52-1501) RF AMPLIFIER MODEL QBH-110 Maximum Ratings Features ! ! ! ! Ambient Operating Temperature . -55ºC to +125 ºC Storage Temperature . -65ºC to + 150 ºC

qbh-110

Contextual Info: Available as: QBH-110, 4 Pin TO-8 Tall 080-22502-0001 QBH-9-110, Connectorized Housing (ES E52-1501) RF AMPLIFIER MODEL QBH-110 Maximum Ratings Features ! ! ! ! Ambient Operating Temperature . -55ºC to +125 ºC Storage Temperature .-65ºC to +150 ºC

9000 044 053 siemens

Abstract: 110N07
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

TO-264 Jedec package outline

Abstract: ID130 110N07
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

110N06

Abstract: 9000 044 053 siemens 110N07 P8000
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

CY15

Abstract: LH-31103K LH-31503K LH-31103 LH-3603
Contextual Info: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding

Contextual Info: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding

Contextual Info: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding

IXFK110N20

Abstract: 20n20 IXFN120N20 IXFK120N20
Contextual Info: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C

p-mqfp-100-2 package outline

Abstract: SAB-C517A
Contextual Info: Device Specifications C517A SIEMENS 10 10.1 Device Specifications Absolute Maximum Ratings Ambient temperature under bias TA .- 40 'C to + 110 'C Storage temperature (Tst).- 65 ”C to +• 150 'C

Contextual Info: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i

Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20

110N30

Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

01N100D

Abstract: 98809b ON 534 TO252 01N1
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000

Contextual Info: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

mv silicon mp3 player

Contextual Info: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

mv silicon mp3 player

Abstract: 73212 SiP21101 100-W SC70-5 sip21101dr-18-e3 SIP21101DR-285 SiP21101DR-26-E3 mp3 player
Contextual Info: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

Contextual Info: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

SiP21101

Abstract: 100-W SC70-5 SiP21101DR-33-E3
Contextual Info: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

100-W

Abstract: Si91841 Si91841DT-18-T1 Si91841DT-25-T1 Si91841DT-26-T1 Si91841DT-285-T1 Si91841DT-28-T1 Si91841DT-29-T1 Si91841DT-30-T1 wireless mp3 player circuit diagram free
Contextual Info: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

Contextual Info: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy

Contextual Info: S IE M E N S Device Specifications C515 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias TA . 0 ‘C to + 110 'C Storage temperature (TSJ). - 65 "C to + 150 “C

G1qr

Abstract: 980529
Contextual Info: new : Surface Mount High IP3 Monolithic Amplifier Broadband, 50 or 75 ohms, Maximum Ratings 110°C max. Storage T emperature -400C to 150°C DC Voltage 13V DC Power 7.15W • excellent flatness, ±0.3 dB typ. • very high IP3, 49 dBm typ. at 150 MHz & 45 dBm typ. at 800 MHz

Contextual Info: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200