110A 202 Search Results

110N20

Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol

110N20

Abstract: pf 480 d25
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A

ISL6336EVAL1Z

Abstract: simulation model electrolytic capacitor ISL6333 ISL6333A ISL6333B ISL6333C ISL6334 ISL6334A ISL6334B ISL6334C
Contextual Info: Application Note 1620 Author: Jason Houston Speed Up The VR11.1 Design Process With Help From iSim:PE VR11.1 Voltage Regulator Design Intersil’s iSim Simulation Tool Intersil offers a family of controllers that can be used to implement voltage regulators VRs that are fully compliant

Contextual Info: PolarTM Power MOSFET HiperFETTM IXFK220N15P IXFX220N15P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 150V 220A Ω 9mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Contextual Info: PolarTM Power MOSFET HiperFETTM VDSS ID25 IXFK220N15P IXFX220N15P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 150V 220A Ω 9mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

magnetic Contactor wiring diagrams

Abstract: 240v DC motor 1370-LG180 1370-DC280 1370-DC180 LG contactors wiring diagram 1370-DBH79 1370-DBH77 wiring diagram Magnetic contactor LG contactors
Contextual Info: DC Loop Contactors, Contactor Lugs and Dynamic Brakes Technical Data DC Loop Contactors, Contactor Lugs and DB Resistors Table of Contents 1370 DC Loop Contactors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Catalog Number Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

IXFK220N17T2

Abstract: IXFX220N17T2 PLUS247 DS100230
Contextual Info: Advance Technical Information IXFK220N17T2 IXFX220N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

3 phase motor soft starter diagram

Abstract: Avalanche diodes Avalanche Rugged Technology IRFP2907 inverter Integrated Starter Alternator IRFP2907 Application Notes IRFP2907 ISA Design 6-12kW
Contextual Info: Extremely Rugged MOSFET Technology with Ultra-low RDS on Specified for A Broad Range of EAR Conditions Anthony F. J. Murray, Tim McDonald, Harold Davis1, Joe Cao1, Kyle Spring 1 International Rectifier, 233 Kansas Street, El Segundo, CA 90245. USA ABSTRACT

T-1000-1

Abstract: 110A 202
Contextual Info: MICROWAVE CHIP RESISTORS MSMW SERIES MECHANICAL DA TA DAT W T L Shown with optional Gold Back SERIES MSMW 110 MSMW 112 MSMW 115 MSMW 118 MSMW 120 MSMW 121 MSMW 122 MSMW 124 L 0.040" 0.050" 0.050" 0.021" 0.100" 0.100" 0.020" 0.150" x x x x x x x x W 0.020"

6v8a

Abstract: BZW07-27 diode P6KE 5KE400A 6276A diode PFZ 15A KE 170A BZW06-102 BZW06-105 BZW06-105B
Contextual Info: transient voltage suppressors «TRANSIL» '«!> THOMSON-CSF diodes de protection «TRANSIL» Types Ir M@Vr M Unidirec­ tional 600 W N N N N N N N N N N N N N N N N N N N N N N N Bidirec­ tional / BZW06-97V2 BZW06-102 BZW06-105 BZW06-111 BZW06-121 BZW06-128

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

PFZ150A

Abstract: 5KE400A 6276-1N 67 6283 BZW 9V1 PFZ200 DTZ62 PFZ62 PFZ68 Thomson-CSF diodes
Contextual Info: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Unidirec­ tional N N N N N N N N N N N N N N •rm @ V rm Bidirec­ tional 1,5 K W / PFZ62 PFZ 62 A PFZ68 PFZ 68 A PFZ 75 PFZ 75 A PFZ 82 PFZ 82 A PFZ 91 PFZ 91 A PFZ 100 PFZ 100 A

Contextual Info: P4SMA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 400 Watt Peak Pulse Power P4SMA PART NUMBER REVERSE BREAKDO BREAKDO TEST WN WN STANDCURR VOLTAGE VOLTAGE OFF ENT VBR V VOLTAGE VBR(V) UNIBIIT (mA) MIN.@IT MAX.@IT POLAR POLAR VRWM(V)

Contextual Info: P4SMA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 400 Watt Peak Pulse Power P4SMA PART NUMBER REVERSE BREAKDOWN BREAKDOWN PEAK MAXIMUM REVERSE STANDTEST VOLTAGE VOLTAGE PULSE CLAMPING LEAKAGE OFF CURRENT V V (V) V CURRENT

Contextual Info: DB LECTRO Inc. P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 170 Volts 600Watts Peak Pulse Power P6SMB PART NUMBER P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB P6SMB

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

6V8C

Abstract: 43A 717 marking CODE 91A 51a marking 6v8a 91A 10 marking code 82A 950 6V8A 910 6v8a 39A 702
Contextual Info: Transient Voltage Suppressors FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Repetition Rate duty cycle : 0.01% Fast response time: typically less than 1.0ps from 0 Volts to VBR min

Contextual Info: P6SMB SERIES DATA SHEET SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 600 Watt Peak Pulse Power FEATURE — For surface mounted applications in order to optimize board space. — Low profile package. — Built-in strain relief. — Glass passivated junction.

1.5 33ca

Abstract: 6V8C 51a marking 6v8a marking CODE 91A 56a MARKING code diode 47c diode 6v8a diode marking 33a on semiconductor marking code 27c
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com P4SMA SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Contextual Info: DB LECTRO Inc. P4SMA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 170 Volts 400Watts Peak Pulse Power P4SMA PART NUMBER P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA P4SMA

Contextual Info: P4SMA SERIES DATA SHEET SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 400 Watt Peak Pulse Power FEATURE — For surface mounted applications in order to optimize board space. — Low profile package. — Built-in strain relief. — Glass passivated junction.

47CA

Abstract: 1.5 33ca 440C 51a marking 350CA marking CODE 91A TP 170A 15CA diode 47c diode 6v8a
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com P6SMB SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR