110UH Search Results

transformer ETD34

Abstract: ETD34 etd34 transformer TMP60235CT
Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 2,3,4-5,6,7: 110uH+/-10% @1kHz,1V. DCR: 2,3,4-5,6,7: 350 mohms max. Turns Ratio: 2,3,4-5,6,7/8,9,10-12,13,14: 1:1+/-5% @1kHz,1V. 1.42 max .118+/-0.01 FEATURES: Isolation:500Vrms THT Style 0.039 SCHEMATIC 1.61 max .200+/-0.01

ts130 transformer

Abstract: SUNNY Pulse Transformer for ethernet BH rx transistor BH-TS130 ethernet transformer turn ratio
Contextual Info: COMMON MODE CHOKE P/N: BH-TS130 DATA SHEET A.GENERAL SPECIFICATIONS: 1. USED IN SUPPRESSION OF EMI NOISE. 2. DESIGNED FOR ETHERNET, FAST ETHERNET, TOKEN RING, FDDI-TP, T1/CEPT AND ISDN. B.ELECTRICAL SPECIFICATIONS@25°C 1.TURN RATIO ±3% : 1: 1 3. PRIMARY OCL (TX & RX): 110uH MIN @ 100KHz/0.2V

Contextual Info: t InNET TECHNOLOGIES T2250S Electrical REV. X3 E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (1 0 -9 ) : ( 9 -7 ) : (2 -4 ) : (1 -3 ) CHIP LINE : 1.45 : 1.45 : 2.9 : 1.0 ± 2% -CD INDUCTANCE: ( 10 - 8 ) : 110uH ± 10% O 0.1 Vac, 10KHz LEAKAGE INDUCTANCE:

parker

Abstract: 36977
Contextual Info: TURNS RATIO: PRI TO SEC 36977 ELECTRICAL SPECIFICATIONS 1 :2CT ±2% INDUCTANCE: (PRI'S) DWG. N0. 40µH MIN. @ 0.01V. 10KHz, 25°C 19uH MIN @ 0.01V, 10KHz, - 40°C TO +85°C LEAKAGE INDUCTANCE: (PRI'S) (WITH SEC'S SHORTED) .110uH MAX. @ 0.1 VRMS,1MHz INTERWINDING CAPACITIANCE:

Contextual Info: 2 . S c h e m a tic : 1. M echanical D im ensions: A 4.40 Max 2 C -o 4 o- 1.45 Max 13.5T 0.05m m JL 66.5T 0.05m m -<5 3 1 3. E le ctric a l Sp ecificatio n : o 00 in 0CL: Pin 4 - 3 110uH±20% @ 100KHz 0.1V Rated Current: 95mA Pin 4 —1 Short 2,3 DCR: Pin 4 - 3 4 .2 ± 1 5 % Ohms

2SC4531

Contextual Info: Product Specification www.jmnic.com 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output applications PINNING

Contextual Info: 1 "^2 3 6 - 0 0 0 2 9 -0 7 P R O P R IE T A R Y REVISIONS D A T A: This docum ent and in form ation contained may no t be rep ro du ced , used o r disclose d w ith ou t prior w ritte n perm ission o f WESTCOR a division o f VICOR C orporation, NOTES:UNLESS OTHERWISE SPECIFIED

7x5 dot matrix led displays

Abstract: arduino uno ASM117 28BYJ-48 mg995 ASM117-3 28BYJ48 4x4 matrix keypad in pic with c code PIC16F877A manual PIC 24C16
Contextual Info: PPIC IC DDevelopment Board Ultra 2 IC + Arduino UNO USER'S GUIDE WIDE.HK page 2 PIC Development Board Ultra 2 Table of content Introduction Connectivity Introduction to PIC . . . . . . . . . . . . . . . . . . . . . . . . . . . .03 PIC sockets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

transformer turn ratio

Abstract: transformer rm8 planar transformer push pull converter transformer delta transformer
Contextual Info: Planar DC/DC Transformer RM8 Power Capacity70 to130W Frequency Range : 10K~300KHz Features The planar transformer is suitable for forward DC/DC converter's transformer and used on VRM. Mechanical Dimension: Unit: mm 10.0 Max. 0.7 2.5 0.5 2.4x0.48 25.0 Max.

AEFD20-3798

Abstract: EFD20 - TRANSFORMER EFD-20 SONY power transformer
Contextual Info: RoHS EFD20 Power Transformer AEFD20-3798 Electrical Specificat ions @25oC EFD20 Core Design Operating Temperature range: -40ºC to +130ºC Wave solder condition: Maximum temperature 260ºC±3ºC, time is 5~6 Sec Refer to SONY SS-00254-4 Standard Specifications @25℃

510K-620K

Abstract: 331J RC-855 RC855NP-1R2M RC855NP-1R5M RC855NP-3R6K
Contextual Info: POWER INDUCTORS < Pin Type: RC Series> Type:RC-855 ◆ Product Description ・8.3x5.7mm Max. L×W , 8.6mm Max. height ・Inductance Range: 1.0 H~1mH ・Rated Current Range: 65mA∼400mA ◆ Feature ・Magnetically unshielded construction. ・Ideally used in Printers, LCD TV, Copy Machine, Mainboard of the compounding machines, Adapters,

Contextual Info: FAN7621 PFM Controller for Half-Bridge Resonant Converters Features Description ƒ The FAN7621 is a pulse frequency modulation controller for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FAN7621 simplifies

FSFR2100 for 450W

Abstract: FEBFSFR2100 450W Mosfet Module fairchild Resonant IC
Contextual Info: FSFR2100 — Fairchild Power Switch FPS for Half-Bridge Resonant Converters Features Description • Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology •  High Efficiency through Zero Voltage Switching (ZVS)

ic fsfr1700l

Abstract: fsfr1700 Resonant Half-Bridge converter LLC resonant converter 300W application note FSFR EC35 fsfr1800 TRANSFORMER EC35 fsfr-1700 frequency to voltage converters 10v at 40kHz LM
Contextual Info: FSFR-Series — Fairchild Power Switch FPS for Half-Bridge Resonant Converters Features Description ƒ Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology ƒ ƒ High Efficiency through Zero Voltage Switching (ZVS)

SNX-2468-1

Abstract: FSFR2100 transformer SNX 2468-1 EC35 TRANSFORMER frequency to voltage converters 10v at 40kHz LM TDA 200W AN-4151 FSFR2100 for 450W TRANSFORMER EC35 EC35 bobbin
Contextual Info: FSFR2100 — Fairchild Power Switch FPS for Half-Bridge Resonant Converters Features Description ƒ Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology ƒ ƒ High Efficiency through Zero Voltage Switching (ZVS) ƒ

SNX-2468-1

Abstract: EC35 TRANSFORMER transformer SNX 2468-1 FAN7621 HIGH FREQUENCY Transformer ec35 LLC resonant converters FAN7621N opto-coupler scr fan76215 FAN7621SJX
Contextual Info: FAN7621 PFM Controller for Half-Bridge Resonant Converters Features Description ƒ The FAN7621 is a pulse frequency modulation controller for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FAN7621 simplifies

TS-136B

Abstract: PerkinElmer transformer PerkinElmer Optoelectronics ts136B PerkinElmer Optoelectronics 136B laptop LCD inverter SCHEMATIC 136-B
Contextual Info: TS-136B SERIES INJECTION TRANSFORMER 5 127 MAX. SS 2 1/2 (63.5) RED LEAD SF MU OUTPU C BA RD BLK WAR 7 1/2 (190.5) MAX. SF SF 8" (203) MIN. MOUNTING HOLES PS BLK PF PF 3 3/8 (85.7) 5 3/4 (146) MAX. BLK Ø.188 (4.78) 4PL A VIEW A-A A DIMENSIONS ARE IN INCHES (MILLIMETERS)

CTX02-15542

Abstract: AC Transformer 50A 100V inductance 0-9v 500ma transformer CTX0215542 irf540 pdf switch WE MIDCOM 31244 ZVN3306 31244 sot-23 Marking SAY 2N3904
Contextual Info: LT1683 Slew Rate Controlled Ultralow Noise Push-Pull DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n Greatly Reduced Conducted and Radiated EMI Low Switching Harmonic Content Independent Control of Output Switch Voltage and Current Slew Rates Greatly Reduced Need for External Filters

10KV SiC

Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Contextual Info: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA

Contextual Info: 1. FEATURES: 1.1 RF Transformer For Wideband RF Applications,Wideband 0.003MHz to 300MHz 1.2 400 V interwinding isolation, 1/4 Watt RF input power; 1.3 250 mA max current rating. 1.4 Excellent Insertion Loss. 1.5 Peak reflow temperature rating 260℃ . 1.6 Storage temperature Component: –40°C to +85°C.

SFP45N03L

Abstract: sfp45n03
Contextual Info: PRELIMINARY SFP45N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.018Ω )@VGS=10V ■ Low Gate Charge (Typical 17.5nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)

Contextual Info: FDD5810 N-Channel Logic Level Trench MOSFET 60V, 36A, 27mΩ Features Applications ̈ RDS ON = 22mΩ (Typ.), VGS = 5V, ID = 29A ̈ Motor / Body Load Control ̈ Qg(5) = 13nC (Typ.), VGS = 5V ̈ ABS Systems ̈ Low Miller Charge ̈ Powertrain Management ̈ Low Qrr Body Diode

Contextual Info: Spec Sheet NOISE SUPPRESSION COMPONENTS Leaded Common Mode Choke Coils for DC and Signal lines CM08RB04 Features Item Summary 3A, Leaded Lifecycle Stage Non-preferred Standard packaging quantity minimum Bulk 500pcs Products characteristics table External Dimensions

FDD5810

Contextual Info: FDD5810 N-Channel Logic Level Trench MOSFET 60V, 36A, 27mΩ Applications „ RDS ON = 22mΩ (Typ.), VGS = 5V, ID = 29A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management „ Low Qrr Body Diode