111IM Search Results

marking BSs sot23

Abstract: 82c80 marking code bss sot TL1040 marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low coltector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS BSS BSS BSS 80 80 82 82 B C B C Marking Ordering Code (tape and reel) PinC onfiguration

sony KHS - 313

Abstract: LTCM500S ICX226AL khs 313 ICX206AL X492 ASJ CR hteu
Contextual Info: ICX226AL SONY * f£ l4 .5 m m IC X 226A U Ì, E tz 'i 1 / 4 M I A E IA È I É ü t f 7* t Ï Ï * 7 K Ü t y m c c D m fa W L i^ ^ v to IC X 2 0 6 A L H ^ L , X i T # tÊ £ W ^ ^ l^ L T V ^ i-0 « Pn0 K foJ± t , $f Super HAD CCD ^ -flriiv-i 0 ^ L T T ^ o

ADE-602-156

Abstract: RF 433 RR3 hitachi l200 2h2a0 ATI 216 bga ero IEC 384 14/2 fire alarm using IC 555 doc ic laf 0001 laf 0001 power MAS 10 RCD
Contextual Info: SuperH SH 32-Bit RISC MCU/MPU Series SH7750 High-Performance RISC Engine Hardware Manual HITACHI ÄDE-602-124A Rev. 2.0 03/02/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s

82801fb lga775

Abstract: E7221 sio lpc chip intel p4 motherboard 6702PXH 82801FB 82801FR LGA775 SCBA3 HA21H LGA775 PIN diagram
Contextual Info: Intel E7221 Chipset Datasheet September 2004 Reference Number: 303630-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

PCIM 96

Abstract: mitsubishi igbt cm
Contextual Info: New 1.7kV IGBT Chip with Fine Pattern and Optimized Buffer Layer John F. Donlon, Eric R. Motto K. Satoh, K. Suzuki, Y. Yoshihiura, T. Takahashi Powerex, Inc. 173 Pavilion Lane Youngwood, PA 15697 USA Mitsubishi Electric Corporation 1-1-1Imajukuhigashi Nishi-ku

Contextual Info: TOSHIBA TENTATIVE THMY728010BEG-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: I = = = = •= Preliminary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

SIEMENS bst 61

Abstract: SPP03942
Contextual Info: S IE M E N S Overview • HYB 39S13620TQ-6/-7/-8 Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - *CK3 6 8 7 8 ns ?AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Contextual Info: CELESTICA 4M x 64 FPM BUFFERED DIMM FEATURES • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, E Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS

LH0042CD

Abstract: LH0052CH h0042 LH0022CH LH0042CH LH0052CD electrometer LH0042 LH0052 AH0152
Contextual Info: LH0022/LH0022C/LH0042/LH0042C/LH0052/LH0052C National Jl A Semiconductor LH0022/LH0022C High Performance FET Op Amp LH0042/LH0042C Low Cost FET Op Amp LH0052/LH0052C Precision FET Op Amp General Description The LH0022/LH0042/LH0052 are a family of FET input op­

Contextual Info: Preliminary Product StemcATiONS Integrated Qrcuits &oup m ID240D02 F la s h M e m o r/ Ca i d 2M H odelN o D 240D 02 S p e c N o . : E L 104048 Issue D a te : A p r i l 7 , 1 9 9 8 I D 2 4 ODO 2 •H a n d le this document carefully for it contains material protected by international copyright law. Any

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

Contextual Info: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)

Contextual Info: Catalog 1307612 J M M I IP A M P M O D U S ystem 50 C onnectors Revised 7-01 Thru-Hole Receptacles, .050 x .100 [1.27 x 2.54] Centerline, Board-to-Board Double Row, Right-Angle .tts [11.56] ]_ !□□□□ !□□□□□ □□□□[ V ^ : i | ; - A =

Contextual Info: GMM7361100BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7361100BS/SG is a 1M x 36 bits Dynamic RAM M ODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs