112166 Search Results

mmbt9013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

transistor cs 9012

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

S9012T

Contextual Info: S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 4.5±0.2 FEATURE 3.5 ±0.2 14.3 ±0.2 Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A V BR CBO : -40 0.43 +0.08

2sc9013

Abstract: SS9012 14-EC
Contextual Info: Transistors 2SC9013 USHA INDIA LTD 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total pow er dissipation. (PT-625mW) • High C ollector Current. (lc = 500mA) •Complementary to SS9012 •Encellent hFE linearity ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PJ2N9013CT

Abstract: NPN transistor 500ma TO-92 PJ2N9012 PJ2N9013 PJ2N9013CX 25 V 500mA TRANSISTOR SOT23 NPN Transistor TO92 25v pt 100 to92 PT-625mW NPN Epitaxial Silicon Transistor
Contextual Info: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION • • • • TO-92 High total power dissipation PT=625mW High collector Current (Ic=500mA) Complementary to PJ2N9012 Excellent hEF Linearity

Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

9012 Unisonic

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

AV9012

Contextual Info: @vic AV9012 TO-92 Plastic-Encapsulate Transistors AV9012 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.

S9013

Abstract: S9013 TO92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

Contextual Info: M C C TO-92 P lastic-E n cap su late T ran sisto rs S9013 T R A N S IS T O R N P N F E A T UR E S J|p%er dissipation Pcm: 0.625W (Tamb=25°C) current Icm: -0.5 A voltage V(BR)CBO: 40 V n H l ttorage junction temperature range Tj.Tstg: -55°C to + 150°C

Contextual Info: 2 START HERE 3 4 Using This Quick Start Manual Connecting the Sensor Input Turn on the Unit To Change the Input Type: Use this Quick Start Manual to set up your controller and begin operation. Information is provided on how to: ¥ Connect ac power 1. Locate the TB2 TB3 on Version #1 connector on

Contextual Info: S9012 PNP General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO

SS9012

Abstract: SS9013
Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

he6104

Abstract: HE9013 HE9012
Contextual Info: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2003.08.28 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

S9013

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Transistor 9013

Abstract: Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013
Contextual Info: NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 特 1.EMITTER 征 发 射 极 Power dissipation 最大耗散功率 PCM : 0.625 W Collector current ICM : 基 极 Tamb=25 3.COLLECTOR 最大集电极电流 0.5 电 极 1 2 3 集电极-基极击穿电压 V BR CBO : 45

HE9013G

Abstract: HE9013 HE6104 HE9012
Contextual Info: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

PT-625mW

Contextual Info: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 • High total power dissipation PT=625mW • High collector Current (Ic=500mA) • Complementary to PJ2N9012 • Excellent hEF Linearity

SS9012

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.

9013 npn transistor

Abstract: 9012 Unisonic
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.