114PF Search Results

Contextual Info: Round Cables 25MIL 0.635mm OKIFLEX-SFX Type (150V, 80°C) Part Number SFX - S2 Specifications Conductor Resistance: 358Ω/km max. Insulation Resistance: 1MΩ min. (km) Dielectric Strength: 1,000 V AC / minute Capacitance: 114pF/m approx. (at 1kHz) Impedance:

3030 equivalent

Contextual Info: Flat / Round Cables 25MIL 0.635mm OKIFLEX-SFX Type (150V, 80°C) Part Number SFX - S2 Specifications Conductor Resistance: 358Ω/km max. Insulation Resistance: 1MΩ min. (km) Dielectric Strength: 1,000 V AC / minute Capacitance: 114pF/m approx. (at 1kHz)

receiver circuit high frequency by input 80HZ

Abstract: HSYNC and VSYNC to sync converter differential amplifier waveform EL5166 EL5175 EL5177 EL9110 AN1318 EL1883 EL4511
Contextual Info: Transmitting SXGA Video Signal through 1kft 300m CAT-5 Cable Application Note January 2, 2008 AN1318.0 Authors: Mike Wong, Sameer Vuyyuru and Marvin Li Introduction TABLE 1. KEY PARAMETERS OF 76Hz SXGA VIDEO SIGNAL With the world dominance of personal computer systems,

ISL59310

Abstract: CAT5 cable CAT 5 cable 519MHz AN1307 audio CAT-5 audio video transmitter over twisted pair op closed-loop 60MHZ EL5175 EL5177
Contextual Info: CAT-5 Video Transmission: Troubleshooting and Equalization Application Note August 2, 2007 AN1307.0 By Tamara Papalias and Mike Wong Introduction TABLE 1. PARAMETERS OF SXGA VIDEO STANDARD CAT-5 cable provides an enormous cost benefit over coax. The average cost of 100 meters of CAT-5 cable is $20 while the

Contextual Info: TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

D1014UK

Abstract: 4049 G200 20swg VG13 VG10
Contextual Info: TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D223

Abstract: RIN200 DCM103 625E3 MAX9000 MAX9002 MAX9003 MAX9005 MAX951 dp106
Contextual Info: * MAX9000 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator + Reference * Single +2.5V to +5.5V Supply Operation * Available in 8-Pin SO/uMAX MAX9000 * 8-Pin SO/uMAX (MAX9002) * 8-Pin SO/uMAX (MAX9003) * 8-Pin SO/uMAX (MAX9005)

4049

Abstract: D1014UK VG10 t4 0560 c
Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

7127

Contextual Info: TetraFET D2218UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS H

sd 431 transistor

Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Contextual Info: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS

Contextual Info: TYPE 'B ’ TYPE A’ 2-56 UNC-2B THD, 1.5" k " -1/8” MIN. THD DEPTH 1.5” _ BOTH ENDS - H - 18 GA TCW .04 DIA TYPE L HT53 7/16" 378" HT54 HT55 11/32" D 1/2" 3/8" 9/32" NPO 7-25pF 1-14pF 1-7 pF N 750 30-45pF 15-40pF 8-15pF K V A r 7KVA 5KVA 3KVA TYPE

FT82-43

Abstract: sWG 24 copper wire ft-82 21 swg enamelled copper wire 064R DMD5012 DMD5012-A UT85 UT85-15 UT85 coax
Contextual Info: TetraFET DMD5012 DMD5012-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS

D2210UK

Abstract: RF35 ER35 core
Contextual Info: TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

21 swg enamelled copper wire

Contextual Info: TetraFET DMD5012 DMD5012-A METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2218UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS

SOT-223 X5T

Abstract: A550C
Contextual Info: High Energy Corporation Contents HF HIGH VOLTAGE CERAMIC WATER COOLED CAPACITORS: PWC SERIES. 2 LOW INDUCTANCE, HIGH RF POWER DOUBLE CUPS: SPHT SERIES. 3 RF TRANSMITTING CAPACITORS: AN OVERVIEW.

21 swg enamelled copper wire

Abstract: D1018UK A 3198 swg copper wire ferronics core
Contextual Info: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

Ferronics

Contextual Info: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

a7x transistor

Abstract: 7127 D2218UK RF35
Contextual Info: TetraFET D2218UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

21 swg enamelled copper wire

Abstract: 12-360-K D1018UK A 3198 UT85-15 ut-85 k 3198 ferronics 12-360 ferronics core
Contextual Info: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

a7x transistor

Abstract: D2210UK RF35
Contextual Info: TetraFET D2210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET DMD5012 DMD5012-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1018UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O