115 MOSFET Search Results

J 115 mosfet

Abstract: sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET
Contextual Info: 2N7002 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

sot-363 n-channel mosfet

Abstract: 2N7002DW Small Signal MOSFET
Contextual Info: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol

2N7002T

Abstract: Small Signal MOSFET
Contextual Info: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

Contextual Info: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W

p10nk60

Abstract: p10nk60zfp P10NK60Z p10nk W10NK60Z transistor P10NK60ZFP B10NK60Z STB10NK60Z p10nk6 STB10NK60ZT4
Contextual Info: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W

p10nk60z

Abstract: P10NK60ZFP w10nk60z stp10nk60
Contextual Info: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W

sot-23 MARKING CODE 70.2

Abstract: 2N7002L 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G
Contextual Info: 2N7002L Preferred Device Small Signal MOSFET 60 V, 115 mA N−Channel SOT−23 http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish V BR DSS RDS(on) MAX ID MAX 60 V 7.5 mW @ 10 V, 500 mA 115 mA MAXIMUM RATINGS

TCP202 10x

Abstract: TDS700 P6243 11A32 TCP0030 TCPA400 TCPA300 Tektronix A622 Tektronix* A622 probe TCP404XL
Contextual Info: 115-2012:QuarkCatalogTempNew 8/13/12 5:11 PM Page 115 1 Active and Current Probes TEST & MEASUREMENT Active Probes Accurate High-Frequency Measurements with Reduced Probe Loading For testing high-impedance, high-frequency circuit elements which demand minimal loading, our portfolio of active voltage probes provides the proper signal bandwidth

joystick PS2

Abstract: W83627HF-AW winbond w83627hf-aw 8893 single chip tv processor W83627HF ps2 joystick acer battery pinout W83627HF-PW MOA2 amikey American Megatrends
Contextual Info: W83627HF/F WINBOND I/O W83627HF/F Data Sheet Revision History Version Pages Dates Version on Web Main Contents Not released For internal use only 1 n.a. 09/25/98 0.50 2 88-93,102,105, 139,151,153 11/10/98 0.51 3 90-93;113-115 01/11/99 0.52 4 90,91,113-115,

9435DY

Abstract: 1153-B
Contextual Info: LT C 115 9 /LTC 115 9 -3 .3 /LT C 1159-5 l im TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ O TUR€ S D C S C R IP T IO n • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20pA Supply Current in Shutdown

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002EPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE

2N7002EGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE

2N7002GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)

2N7002PT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)

Contextual Info: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Kuno Straub Phone: +49 (0)89 878067-147 kuno.straub@vincotech.com VINCOTECH RELEASES MOSFET-BASED, THREE-LEVEL INVERTER POWER MODULE

marking 702

Abstract: 2N7002LT ON
Contextual Info: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

l2n7002dw1t1g

Abstract: CASE 419B-02 sot363 ON Marking DS
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage

marking 72

Abstract: 10V 50mA zero voltage switch 2N7002T
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2N7002T MOSFET Plastic-Encapsulate Transistors SOT-523 N-Channel FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

L2N7002DMT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

L2N7002M3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

marking 72

Abstract: 2N7002T
Contextual Info: SOD-523 Plastic-EncapsulateTransistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

Contextual Info: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package