117 S TRANSISTOR Search Results

3055t

Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Contextual Info: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50

smd transistor 6m

Contextual Info: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum

Contextual Info: V A R I- L S IE CO I N C D Bl m 37b2H 0001D4Ô S • VRL X -5 0 -1 5 VCO-117 Voltage Controlled Oscillator 300-600 MHz GUARANTEED MINIMUM PERFORMANCE DATA DESCRIPTION The VCO-117 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor

SGS115

Abstract: sgs110 SGS111 SGS112
Contextual Info: £ Z 7 S G S -T H O M S O N T IP /S G S I10- 111-112 ^ 7 # MOœLiOTOMDOi T IP /S G S 1 15-116-117 POWER DARLINGTONS D E S C R IP T IO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SGS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

v16070

Contextual Info: Ordering number: EN 3115 FC 117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

LM117T

Abstract: motorola LM317 REGULATOR IC 7905 motorola lm317k lm317t motorola transistor a750 K1170 1E75 lm317 so8 LM117 to92
Contextual Info: MOTOROLA s c {TELECOM} 14E » I b3b?aS3 0001733 1 | LM 117 ^ M O T O R O L A LM 217 LM 317 Sp ecification s and A p plications Inform ation THREE-TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATORS THREE-TERMINAL ADJUSTABLE OUTPUT POSmVE VOLTAGE REGULATORS

T1P112

Contextual Info: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117

ic 4604

Abstract: lvco 251C 2SB1172 2SB1172A 2SD1742 2sb1742 t150t
Contextual Info: 2SB1172, 2SB1172A Power Transistors 2 S B 1 1 7 2 , 2SB 117 2A Silicon PNP Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S D 1 7 4 2 , 2 S B 1 7 4 2 Package Dimensions Unit • mm • Features 3-7 max, 7.3max. 3.2max. • High DC current gain hpE and good linearity

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3467JAN, JTX, JTXV 2N3468JAN, JTX, JTXV Processed per MIL-S-19500/348 CRYSTALONCS 2805 Veterans Highwa Suite 14 PNP Silicon Small-Signal Transistors Konkonkoma N Y. 117 o e n g n e a ' o ' g e n e r a l p u r p o s e s w itc h in g a p p ti c a h o n s

Contextual Info: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C

ESM117

Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
Contextual Info: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique

730C-04

Abstract: moc8103 M0C8104 MOC8101 MOC8102 MOC8104 730D-05 MOC81Q4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL ca <S> ® CSA BS SEMKO OEMKO NEMKO SETI BABT 6-Pin DIP Optoisolators For Power Supply Applications No Base Connection MOC8101* [CTR = 50-80% ] MOC8102* [CTR e 73-117%] MOC8103 [CTR e 108-173%] MOC8104 [CTR

Contextual Info: CONIdELL CORP/ ANALOG SYS S IE D 2413*117 0D00353 bSb B N R C -79-fc-H MA-207 Super Fast, Wideband Operational Amplifier r iN H L O G S Y S T E M S .G E N E R A L D E S C R IP T IO N ' D A TA SHEET FEATURES' 1.5GHz GAIN-BANDWIDTH PRODUCT ±800V / uS SLEW RATE

SSM2116

Abstract: ssm-2116 018t power SSM2018TR SM2018T 018T SM2118T SSM2018 IC 7470 pin configuration
Contextual Info: Trimless Voltage Controlled Amplifiers A N ALO G D E V IC E S SSM2018T/SSM2118T* FUNCTIONAL BLOCK DIAGRAMS FEATURES 117 dB Dynamic Range 0.006% Typical THD+N l@ 1 kHz, Unity Gain 140 dB Gain Range No External Trimming Required Differential Inputs Complementary Gain Outputs

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

TIP111

Contextual Info: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A

westinghouse transistors

Abstract: tic 2116 B WESTINGHOUSE transistor 2N3442 transistor 2n3442
Contextual Info: “□ o s: m m x T D 64-673 Page 3 > Silicon Power Transistors J E D E C Type 2N3442 Westinghouse cn -*J N sO For Switching, Amplifier and Regulator Applications 10 Amperes, 117 Watts O' ISJ Application The Westinghouse 2N3442 is an N PN dif­ fused transistor. This general-purpose tran­

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

HT3814B

Abstract: romance de amor HT3812J HT3812H Rudolph The Red-Nosed Reindeer MUSIC NOTES ht3813a HT3813D 4123 transistor HT3814A HT3812B
Contextual Info: HT3810 Series 128-Note Melody Generators Features • • • • • • • Operating voltage: 2.4V~5.0V 7 tempo options: 469, 234, 156, 117, 94, 78, 67 2 Envelope sustain durations: 1 beat, 2 beat s 2 “CHA” sustain duration options: 1/8 beat or 1/4 beat

Contextual Info: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range

Contextual Info: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range

Contextual Info: Maxi Family 110 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Applications • • •

Contextual Info: Maxi Family 72V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range