11APR05 Search Results
11APR05 Datasheets Context Search
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MIL-PRF-8805/98
Abstract: 68AT22-5 MIL-PRF-8805 TL-10632 15PA313-AT
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TL-10632) 10SEP74 17SEP74 5M-1994 68AT22 MIL-PRF-8805/98 68AT22-5 MIL-PRF-8805 TL-10632 15PA313-AT | |
Contextual Info: 4 COPYRIGHT 2 3 THIS DRAWING IS UNPUBLISHED. 1 I— RELEASED FOR PUBLICATION- DIST J-ALL RI-5WTS RESERVED. BY TYCO ELECTRONICS CORPORATION, - ES 00 "DATE RELEASED E C R -0 5 -0 0 1 438 11APR05 WIN I APVD J.Z I.E L 2 . 9 0 M AX TY P |
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11APR05 31MAR2000 | |
IRFZ48 mosfet driverContextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching |
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IRFZ48RS, IRFZ48RL, SiHFZ48RS SiHFZ48RL IRFZ48, SiHFZ48 2002/95/EC O-262) O-263) 2011/65/EU IRFZ48 mosfet driver | |
Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested |
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SQM25N15-52 AEC-Q101 O-263 O-263 SQM25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019 |
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SQM120N04-1m9 AEC-Q101 O-263 O-263 SQM120N04-1m9-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM85N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085 ID (A) |
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SQM85N03-06P AEC-Q101 2002/95/EC O-263 O-263 SQM85N03-06P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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SUM50P10-42 2002/95/EC O-263 SUM50P10-42-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
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IRF820S, SiHF820S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package |
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SUM09N20-270 2002/95/EC O-263 SUM09N20-270-E3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
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IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package |
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SUM60N10-17 2002/95/EC O-263 SUM60N10-17-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
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IRF840S, SiHF840S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D |
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SUM110P04-05 O-263 SUM110P04-05-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sum75n06Contextual Info: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT |
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SUM75N06-09L O-263 SUM75N06-09L-E3 10trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sum75n06 | |
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Contextual Info: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
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IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 75 RDS(on) () at VGS = 10 V 0.0048 ID (A) • TrenchFET Power MOSFET 120 |
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SQM120N08-05 AEC-Q101 O-263 2002/95/EC SQM120N08-05-GE3 11-Mar-11 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance |
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SQM50P08-25L AEC-Q101 O-263 O-263 SQM50P08-25L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM60N06-15 AEC-Q101 2002/95/EC O-263 O-263 SQM60N06-15-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET |
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SQM120N03-1m5L AEC-Q101 2002/95/EC O-263 O-263 SQM120N03-1m5L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
IRFZ48RL
Abstract: SiHFZ48RL
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IRFZ48RS, IRFZ48RL, SiHFZ48RS SiHFZ48RL IRFZ48, SiHFZ48 2002/95/EC O-263) O-262) 11-Mar-11 IRFZ48RL | |
Contextual Info: SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 100 RDS(on) () at VGS = 10 V 0.0105 |
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SQM100N10-10 AEC-Q101 O-263 SQM100N10-10-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM60N06-15 AEC-Q101 2002/95/EC O-263 SQM60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097 |
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SQM35N30-97 AEC-Q101 O-263 SQM35N30-97-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |