11DQ03 Search Results

Contextual Info: Bulletin PD-2.287 rev. F 11/04 11DQ03 11DQ04 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform 1.1 A 30/40 V IFSM @ tp = 5 µs sine 225 A VF @ 1 Apk, TJ = 25°C 0.55

11DQ03

Abstract: 11DQ04 DO-204AL
Contextual Info: Bulletin PD-2.287 rev. E 03/03 11DQ03 11DQ04 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics 11DQ. Units IF AV Rectangular waveform 1.1 A 30/40 V IFSM @ tp = 5 µs sine 225 A VF @ 1 Apk, TJ = 25°C 0.55

11DQ10

Abstract: 11DQ03 11DQ09 11DQ06 equivalent 11DQ04 11DQ05 11DQ06
Contextual Info: 11DQ03 - 11DQ10 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 30 - 100 Volts IO : 1.1 Ampere DO - 41 FEATURES : * * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low cost

11DQ03

Contextual Info: SCHOTTKY BARRIER DIODE 1.1A/30— 40V 11DQ03 11DQ04 FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 52nun Inside Tape Spacing Package Available

Contextual Info: 11DQ03, 11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

Contextual Info: 11DQ03/11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for

10jq030

Abstract: 10jq100
Contextual Info: INTERNATIONAL R E C T I F I E R HE D | Schottky Rectifiers 4355455 O O l Q D n 1 | t - o 3 - ' 3-1 1.1 T O 5 .5 AM PS Part Number • f AU @ T q VRWM VFM (V) (A) (°C) ' fm (A) 1.1 1.1 1.1 1.1 10JQ100 30 40 50 60 90 100 25 25 25 25 25 25 11DQ03 11DQ04

Contextual Info: 11DQ03 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.1 @Temp (øC) (Test Condition)58’ V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.42 V(FM) Max.(V) Forward Voltage740m @I(FM) (A) (Test Condition)1.1

11DQ03

Abstract: 11DQ04 DO-204AL
Contextual Info: 11DQ03, 11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

ACS 086

Abstract: D00I D475 11DQ03 11DQ04 DO-204AL rg4m ScansUX40 International Rectifier 11DQ09
Contextual Info: PD-2.287 International 11DQ03 11DQ04 ïôrIRectifier 1.1 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 11D Q . Units *F AV Ractanaular waveform 1.1 A 30/40 V lFSM tp -5 p s s in e 240 A VF 0.55 V -40to125

Contextual Info: SCHOTTKY BARRIER DIODE 11DQ03 11DQ04 1.1A/30— 40V FEATURES • Miniature Size • Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Capability • 30 Volts through 100 Volts Types Available " 52mm Inside Tape Spacing Package Available

Contextual Info: SCHOTTKY BARRIER DIODE 11DQ03L ia /sov FEATURES 2.7 .106 DIA 2.3(.091) o Miniature Size oLow Forward Voltage Drop oLow Power Loss, High Efficiency 0.9(.035) 0.7(.027) o High Surge Capability 27(1.06) MIN 030 Volts thru 100 Volts Types Available 0 52mm Inside Tape Spacing Package Available

11DQ03

Abstract: 11DQ04 DO-204AL
Contextual Info: PD-2.287 rev. A 12/97 11DQ03 11DQ04 SCHOTTKY RECTIFIER 1.1 Amp Description/Features Major Ratings and Characteristics Characteristics 11DQ. Units I F AV Rectangular waveform 1.1 A VRRM 30/40 V I FSM @ tp = 5 µs sine 240 A VF @ 1 Apk, TJ = 25°C 0.55 V TJ

Contextual Info: 11DQ03 - 11DQ04 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 30 - 40 Volts IO : 1.1 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low cost 1.00 25.4

11DQ03

Contextual Info: VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

11DQ03

Abstract: 11DQ04
Contextual Info: SCHOTTKY BARRIER DIODE 11DQ03 11DQ04 1.1A/30— 40V FEATURES « Miniature Size f 2.7 . 106 n I , — i2 .3 ( .0 9 l) • Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0 .9 (.0 3 5 )n r » 0.7(.(tô7) • High Surge Capability 27(1.06) " MIN

50SQ100

Abstract: 80SQ045 8TQ090 31DQ10 10TQ030 10TQ035 21DQ03 D0204AR
Contextual Info: Schottky Rectifiers International iori Rectifier Single Chip Devices 1.1-18 Am ps >F AV @ Tc VFM @ 'FM •FSM (1) >RM @ Tj - 125°C & Max. Tj totoH V r w M (mA) (V) (A) <°C) = 'F(AV) Tj = 100°C (V) (A) (A) <°C) Case Outline Number (8) 11DQ03 11DQ04 11DQ05

11DQ04

Abstract: 11DQ03
Contextual Info: VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

Contextual Info: 30 Volts 1A Avg. 11DQ03L SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実 効

11DQ03L

Contextual Info: SBD Type :11DQ03L OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 30 Volts thru 100 Volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings

11DQ03L

Contextual Info: 1A Avg. 30 Volts SBD 11DQ03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実 効

11DQ03

Abstract: 11DQ04 DO-204AL
Contextual Info: Bulletin PD-2.287 rev. C 05/01 11DQ03 11DQ04 SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics Description/Features The 11DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.