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    11A 650V MOSFET Search Results

    11A 650V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    11A 650V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p11nm60fp

    Abstract: P11NM60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK STP11NM60 STB11NM60 O-220 p11nm60fp P11NM60

    p11nm60fp

    Abstract: p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 STP11NM60FP
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK STP11NM60 STB11NM60 O-220 p11nm60fp p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60-1 STB11NM60T4 STP11NM60FP

    B11NK50Z

    Abstract: p11nk50zfp P11NK50 p11nk50z P11NK
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK O-220 B11NK50Z p11nk50zfp P11NK50 p11nk50z P11NK

    p11nk60zfp

    Abstract: P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK O-220 p11nk60zfp P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60

    p11nk60zfp

    Abstract: P11NK60Z STP11NK60Z p11nk60 STB11NK60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK O-220 p11nk60zfp P11NK60Z STP11NK60Z p11nk60 STB11NK60

    Mosfet

    Abstract: SSF11NS65 diode 945
    Text: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		PDF SSF11NS65 36ohm O-220 SSF11NS65 Mosfet diode 945

    Mosfet

    Abstract: SSF11NS65F
    Text: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		PDF SSF11NS65F 36ohm O220F SSF11NS65F Mosfet

    Mosfet

    Abstract: SSF11NS65U
    Text: SSF11NS65U 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.32Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		PDF SSF11NS65U O-220 SSF11NS65U Mosfet

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA0556D 2SK4088LS O-220F-3FS 1000pF PW10s, A0556-7/7

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA0556D 2SK4088LS O-220F-3FS 1000pF A0556-7/7

    11NM60

    Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK STP11NM60 STB11NM60 O-220 11NM60 STP11NM60FP 11A 650V MOSFET STB11NM60-1

    Untitled

    Abstract: No abstract text available
    Text: AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOW11S65/AOWF11S65 AOW11S65 AOWF11S65 O-262 O-262F

    Untitled

    Abstract: No abstract text available
    Text: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOT11S65/AOB11S65/AOTF11S65 AOT11S65 AOB11S65 AOTF11S65 AOT11S65L AOB11S65L AOTF11S65L O-220 O-265

    Untitled

    Abstract: No abstract text available
    Text: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOT11S65/AOB11S65/AOTF11S65 AOT11S65 AOB11S65 AOTF11S65 AOT11S65L AOB11S65L AOTF11S65L O-220 O-265

    Untitled

    Abstract: No abstract text available
    Text: ICE11N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE11N65FP 250uA O-220 0E-06 0E-04 0E-02 0E-00

    Sj 07 DIODE SMD

    Abstract: ipd65r IPD65R225C7 65C7225
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPD65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPD65R225C7 1Description DPAK


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPD65R225C7 IPD65R225C7 Sj 07 DIODE SMD ipd65r 65C7225

    65C7225

    Abstract: Ipp65r225
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R225C7 1Description TO-220 tab


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPP65R225C7 IPP65R225C7 O-220 65C7225 Ipp65r225

    65C7225

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R225C7 1Description D²PAK


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPB65R225C7 IPB65R225C7 65C7225

    Untitled

    Abstract: No abstract text available
    Text: ICE22N65W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.165Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE22N65W 250uA O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description


    Original     		PDF IPL65R210CFD

    65E6190

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8


    Original     		PDF IPL65R190E6 65E6190

    Untitled

    Abstract: No abstract text available
    Text: ICE60N150FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N150FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

    11N60

    Abstract: MOSFET 11N60 11n60 dc
    Text: SuperFET TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		PDF FCB11N60 FCB11N60 FCB11N60TM 11N60 MOSFET 11N60 11n60 dc