11A 650V MOSFET Search Results

p11nm60fp

Abstract: P11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω

p11nm60fp

Abstract: p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 STP11NM60FP
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V

B11NK50Z

Abstract: p11nk50zfp P11NK50 p11nk50z P11NK
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p11nk60zfp

Abstract: P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p11nk60zfp

Abstract: P11NK60Z STP11NK60Z p11nk60 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V

Mosfet

Abstract: SSF11NS65 diode 945
Contextual Info: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF11NS65F
Contextual Info: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF11NS65U
Contextual Info: SSF11NS65U 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.32Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Contextual Info: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

11NM60

Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω

Contextual Info: AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: ICE11N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Sj 07 DIODE SMD

Abstract: ipd65r IPD65R225C7 65C7225
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPD65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPD65R225C7 1Description DPAK

65C7225

Abstract: Ipp65r225
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R225C7 1Description TO-220 tab

65C7225

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R225C7 1Description D²PAK

Contextual Info: ICE22N65W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.165Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description

65E6190

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8

Contextual Info: ICE60N150FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

11N60

Abstract: MOSFET 11N60 11n60 dc
Contextual Info: SuperFET TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and