11A ABS Search Results

BUT11

Abstract: 250VLC NPN Transistor VCEO 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A Emitter B ase Voltage Collector Current DC

B11NK50Z

Abstract: p11nk50zfp P11NK50 p11nk50z P11NK
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p11nk60zfp

Abstract: P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1

p12nm50n

Abstract: F12NM50N p12nm50 STF12NM50N STF12NM50N TR STB12NM50N STD12NM50N STP12NM50N
Contextual Info: STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50N 550V <0.38Ω 11A STD12NM50N 550V <0.38Ω 11A STF12NM50N

p12nm50

Abstract: ISD12A dpak mosfet
Contextual Info: STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50N 550V <0.38Ω 11A STD12NM50N 550V <0.38Ω 11A STF12NM50N

p12nm50n

Abstract: p12nm50 F12NM50N STB12NM50N STD12NM50N STF12NM50N STP12NM50N
Contextual Info: STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50N 550V <0.38Ω 11A STD12NM50N 550V <0.38Ω 11A STF12NM50N

P11NM60

Abstract: p11nm60fdfp b11nm60
Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

JESD97

Abstract: STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP
Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

p11nm60fp

Abstract: P11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω

Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

p11nm60fp

Abstract: p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 STP11NM60FP
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V

f11nm80

Abstract: STF11NM80 800v mosfet p11nm80 w11nm80 STP11NM80 B11NM80 STB11NM80 st 393 JESD97
Contextual Info: STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220/FP- D2PAK - TO-247 MDmesh Power MOSFET General features Type VDSS RDS on RDS(on)*Qg ID STB11NM80 800V < 0.40Ω 14Ω*nC 11A STF11NM80 800V < 0.40Ω 14Ω*nC 11A STP11NM80

F11NM80

Abstract: p11nm80 GS 393
Contextual Info: STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220 /FP- D2PAK - TO-247 MDmesh Power MOSFET General features Type VDSS RDS on RDS(on)*Q g ID STB11NM80 800V < 0.40Ω 14Ω*nC 11A STF11NM80 800V < 0.40Ω 14Ω*nC 11A STP11NM80

p11nk60zfp

Abstract: P11NK60Z STP11NK60Z p11nk60 STB11NK60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V

BUT-11

Abstract: BUT11A CIRCUIT BUT11 BUT11/11A BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

Contextual Info: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MTAN7254M-11A-A 0.54" 13.72mm DUAL ALPHANUMERIC DISPLAY 0.54" DUAL ALPHANUMERIC DISPLAY MTAN7254M-11A-A

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT11

Abstract: BUT-11
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

AN-11A

Abstract: QuickSwitch as a 5V TTL to 3V TTL Converter QS3861 1N4148 4.3V 1N4148 QS3384 43VCC 1N4148 chip ttl to HIGH VOLTAGE converter
Contextual Info: AN-11A Q QUALITY SEMICONDUCTOR, INC. Bus Switches Provide 5V and 3V Logic Conversion with Zero Delay Application Note AN-11A Abstract Background Battery operated computer systems, such as notebook computers, need support logic with a combination of high-speed and low power. Highspeed logic is required to support high-speed

MOSFET MARK H1

Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines

Rad Hard in Fairchild for MOSFET

Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs