11E BASE CONNECTION DIAGRAM Search Results

IN4148

Abstract: IN4148 specifications IN4148 diode specifications IN4148 equivalent
Contextual Info: BURR — BROLJN CORP H E I d I 7 3 i 3 b 5 o o m g g ^ T - s S - o Y " B U R R -B R O W N E g | \ REF200 3 DUAL CURRENT SOURCE o o CM U_ LU DC FEATURES APPLICATIONS • COMPLETELY FLOATING: No Common Connection • HIGH ACCURACY: lOOfiA ±0.5% • LOW TEMPERATURE COEFFICIENT:

957a

Abstract: 75T957A-1P Teltone M-957 75T957-IP qau3
Contextual Info: IIE SILICON SYSTEMS INC Mmsuskms 0 2 5 3 ^ 5 Qaü37?Q 1 • D SSI 75T957/957A DTMF Receiver with Diai Tone Reject Filtér — T -7 S -T 7 -0 7 May, 1989 FEATURES DESCRIPTION The SSI 75T957/957A combines swltched-capacitor and digital frequency measuring techniques to decode

Contextual Info: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica­ tions, while the 4391 was designed up for

Contextual Info: LM139/139A,339/339A RAYTHEON/ 11E D | OQO blM a S | Comparators -p _ y j, - S I.'M I CON D U CT 0 R LM139/139A, 339/339A, Single-Supply Quad Comparators They are intended for applications not needing response time less than 1 |a.S, but demanding excellent op amp input parameters of offset

A7W17

Abstract: CXK79M18C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 1K x 8 static ram IDD24
Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

CXK79M36C164GB

Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

CXK79M72C165GB-4

Abstract: CXK79M36C165GB CXK79M36C165GB-3 CXK79M36C165GB-33 CXK79M72C165GB CXK79M72C165GB-3 CXK79M72C165GB-33
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 3/33/4 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

AP 1510 equivalent

Abstract: 3573 bb OPA541AP-BI LM audio power amplifier 4840
Contextual Info: B U R R —B R O U N H E C OR P D |'l? 3 13 t.S DDmflfl? 7 B U R R -BR O W N Bb O P A 541 | b High Power Monolithic OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • MOTOR DRIVER POW ER S U P P LIES TO ±401/ O U TP U T C U R R EN T TO 10A PEAK

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

CXK79M36C161GB

Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Contextual Info: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words

CXK79M36C165GB

Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

ku 602 vc

Contextual Info: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

2U 73 diode

Abstract: CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

CXK79M18C164GB

Abstract: CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

CXK79M18C165GB

Abstract: CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

A7W17

Abstract: CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105
Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

Contextual Info: BURR-BROUN CORP h D e | l? 3 1 3 t,S 0014333 3 B U R R -B R O W N •B B I DAC710 DAC711 i IÏ Iï ï ï Ï Í I I i I FEATURES AND MODELS • DESIGNED SPECIFICALLY FOR CL0SED-L00P SERVO-CONTROL APPLICATIONS • • MONOTONIC TO 15 BITS OVER TEMPERATURE

Contextual Info: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges

CXK79M72C164GB-28

Abstract: CXK79M72C164GB-33 CXK79M36C164GB CXK79M72C164GB CXK79M72C164GB-3 BGA209
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 28/3/33/4 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

74HTC

Abstract: sbv 566 G24P QG143G1 dac71 burr brown
Contextual Info: BURR-BROüJN CORP HE D 117313tiS QG143G1 b | - - 0 e ! - / 4? B U R R -B R O W N • s b - DAC71 | D E SC R IP T IO N • 16-BIT RESOLUTION The DAC71 is a complete 16-bit digital-to- analog converter that includes a precision buried-zener volt­

S2301-512Q

Abstract: S2304-512Q S2301-512 S2304 s2301 S2301-256Q S2304-1024Q
Contextual Info: HAMAMATSU CORP 11E D HAMAMATSU TECHNICAL DATA 0QGSS51 € c € • PCD LINEAR IMAGE SENSORS S2301 SERIES t=v/-s s * 5 0 /¿ m € 1 P itc h T yp e) The S2301 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically

OPA633AH

Contextual Info: -BROUN CORP HE » I 1 7 3 1 3 b 5 GQ13ö0b T - ^ - 0 7 -y Q B U R R -B R O W N | 1 _ OPA633 AVAILABLE IN DIE FORM High Speed BUFFER AMPLIFIER FEATURES APPLICATIONS ^ • • • • • • • • • W IDE BANDWIDTH: 275MHz HIGH SLEW RATE: 2500V/jus HIGH OUTPUT CURRENT: 100mA