11MAR9 Search Results

telefunken U 226 B phase control ic

Abstract: U2008B-AFP U2008B AN 10349 TRIAC 226 b U2008B-A U2008
Contextual Info: S e m i c o n d u c t o r s U A U l / U l i Low Cost Current Feedback Phase Control Circuit Description The U2008B is designed as a phase control circuit in bipolar technology. It enables load-current detection as well as mains-compensated phase control. Motor control

Low Leakage Diode

Abstract: 1N486B
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating

FAIRCHILD DIODE

Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

Contextual Info: 4 DR/4 W1NG M AD E I N T H I R D A N G L E P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. RELEASED FOR COPY RI GH T 19 BY AMP <Z> LOC PUBLICATION IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. R E V IS IO N S DIST 54 ZONE LTR DESC R I P T I O N

EMS 20-50

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 19 LOC G ALL RIGHTS RESERVED- REVISIONS DIST 86 LTR DESCRIPTION REVISED D SIGHT 1.5 7 DATE S REDRAWN PER 0720-0822-95 DWN 04MAR96 DKS APVD WJV D HOLE R r. 0 6 2 1

ec 150 99 ni

Contextual Info: IRD ANGLE PROJEC TH IS DRAWING 15 U N P U B L IS H E D . COPYRIGHT 19 RCLC A G CD BY AMP TO R P U B L I C A T IO N INCORPORATED. R EV I 5 1 0N5 BD ALL INTERNATIONAL RIGHTS RESERVED. 77 DESCRIPT[ON SUPERSEDED - 3 -2. 6 3 5 ± .0 1 5 - RT PER EC 0 0 2 0 - 5 8 7 - 9 6

1S923

Abstract: IN5225 175 WIV High Switching
Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

3906

Abstract: STS-8857
Contextual Info: STS-8857 SILONEXl Transmissive Switch Assembly Features • Non contact switching • Three wires for electrical connection • Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on

DO-35 PACKAGE

Abstract: Fairchild 1N3595 1n6099
Contextual Info: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. FT DIST 13 REVISIONS LTR DESCRIPTION REV PER EC OG1C-25-98 DATE DUN APVD 11 M A R 98 BC MM D D RAISED CAVITY IDENTIFICATION ON REAR FACE ONLY.

l 9113

Contextual Info: RADIALI. COAXIAL department R 1 9 1 . 5 2 7 . T EC H N IC A L 4 0 0 DATA Issue : 9113 Page TNC FEMALE - MCX FEMALE /FLANGE SERIES.ADAPTATOR 1 / 1 PEN 90-0014-016 4 holes.2DIA 4 lamages05.1 .886 DIA (022.5) I (MOUNTING HOLE) at- - .433 DIA C011) .441 DIA

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 19 RELEASED BY AMP INCORPORATED. FOR P U B L I C A T I O N AL L R I G H T S , 19 LOC RESERVED. REVI SI ONS DI ST G 86 LTR D ESCRIPTION REV D SIGHT 0 G 3 A - 0 5 6 1 -01 DWN APVD 030CT02 JR MS H0L5 1.57 R [ .062] MI N

FD700

Abstract: FDH700
Contextual Info: FDH700 DISCRETE POWER AND SIGNAL TECHNOLOGIES ULTRA FAST DIODE Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY Absolute Maximum Ratings note 1 TA = 25OC unless otherwise noted Parameter Value Units Storage Temperature

HY57V658020ATC-10

Abstract: HY57V658020A
Contextual Info: -M Y U N D H I - - • HY57V658020A 4 Banks x 2 M x 8BI1 Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited lor the main memory applications which require large memory density and high bandwidth. HY57V658020A Is organized as 4banks of

IN5225

Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

Elna 1990

Abstract: U3500BM U3550BM ELNA are
Contextual Info: U3500BM Cordless Telephone Signal Processor Description Cordless telephone signal processor reduces the need for many external components. Features RF Receiver Part coding, transmit and receive part adjustable and mutable by serial bus, compander, pre-/ deemphasis, scrambler

Daco Semiconductor

Abstract: audio scrambler U3500BM U3550BM
Contextual Info: U3500BM Cordless Telephone Signal Processor Description Cordless telephone signal processor reduces the need for many external components. Features RF Receiver Part coding, transmit and receive part adjustable and mutable by serial bus, compander, pre-/ deemphasis, scrambler

Contextual Info: DRAWIN9 WADE IN THIRD ANALE PROJECTION THIS DRAWING IS U N P U B L I S H E D . LOG RELEASED FOR PUBLICATION By A M P COPYRIGHT 1fl INCORPORATED. FT ALL INTERNATIONAL RIGHTS RESERVED. DIST REVISIONS 13 DESCRIPTION REDRAWN 8 REVISED PER ECN BD6668 AT REV PER EC 00 20-250 -94

Contextual Info: DRAWIN9 WADE IN THIRD ANALE PROJECTION THIS DRAWING IS U N P U B L I S H E D . COPYRIGHT 1fl LOG RELEASED FOR PUBLICATION By A M P INCORPORATED. FT ALL INTERNATIONAL RIGHTS RESERVED. DIST R EV IS IO N S 13 DESCRIPTION REDRAWN 8 REVISED PER ECN BD6669 AT

Contextual Info: DRAVUN9 WADE IN THIRD ANALE PROJECTION THIS DRAWING IS U N P U B L I S H E D . COPYRIGHT 1fl LOG RELEASED FOR PUBLICATION By A M P INCORPORATED. FT ALL INTERNATIONAL RIGHTS RESERVED. DIST R EV IS IO N S 13 DESCRIPTION REDRAWN 8 REVISED PER ECN BD6669 AT

Contextual Info: DRAVUN9 WADE IN THIRD ANALE PROJECTION THIS DRAWING IS U N P U B L I S H E D . COPYRIGHT 1fl LOG RELEASED FOR PUBLICATION By A M P INCORPORATED. FT ALL INTERNATIONAL RIGHTS RESERVED. DIST R E V IS IO N S 13 DESCRIPTION REDRAWN 8 REVISED PER ECN BD6669 REV PER EC 0 0 2 0 - 2 5 0 - 9 4

U2010B-AFP

Abstract: U2010B-A
Contextual Info: U ^ U I U J U S e m i c o n d u c t o r s Phase Control Circuit for Current Feedback Description The U2010B is designed as a phase-control circuit in bipolar technology. It enables load-current detection and has a soft-start function as well as reference voltage

Contextual Info: 4 DR/4 W1NG MADE I N T H I R D A N G L E P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. RELEASED FOR COPY RI GH T 19 BY AMP <Z> LOC PUBLICATION IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. REVISIONS DIST 54 ZONE LTR DESC R I P T I O N DATE

Contextual Info: I 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 ALL RIGHTS RESERVED. D B / \ ROUNDED EDGES ON THE OUTSIDE AND CHAMFERS BY THE LOCKING LATCHES, A AMP 1471-9 REV 11JUN97 L 11-MAR-98 10:28:43 amp40973 /home/ssr'v026d/dsk04/dept4023/amp40973/edminod