1200-1300 MHZ RF POWER Search Results

KC2-19

Contextual Info: Frequency Multiplier Doubler KC2-19+ Typical Performance Data RF IN=+5dBm FREQUENCY X 1 OUTPUT 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 (MHz) X 2 OUTPUT X 3 OUTPUT 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

power tr unit j122 5 pin

Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Contextual Info: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 425 MHz to 2700 MHz NEW! QCN MODEL NO. * QCN-7 * QCN-12 * QCN-19 * QCN-25 * QCN-27 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB)

M869

Contextual Info: Ultra-Small Ceramic ! NEW Power Splitters/Combiners 2 Way-90° 50Ω QCN-SERIES 425 to 2700 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 15W* max. *derate linearly to 7W at 100°C ambient.

Contextual Info: Dual 900MHz Balanced Mixer with High Side LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 700MHz to 1000MHz IF Frequency 50MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB

FV1206-1

Abstract: FV-1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 330 MHz to 3400 MHz NEW! QCN MODEL NO. * QCN-5 * QCN-7 * QCN-12 * QCN-12A * QCN-19 * QCN-25 * QCN-27 QCN-34 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees)

FV-1206-1

Abstract: FV1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 330 MHz to 3400 MHz NEW! QCN MODEL NO. * QCN-5 * QCN-7 * QCN-12 * QCN-12A * QCN-19 * QCN-25 * QCN-27 QCN-34 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees)

Zener C215

Contextual Info: ASX520 250 ~ 3000 MHz MMIC Amplifier Description Features  31 dB Gain at 900 MHz  33 dBm P1dB at 900 MHz  48 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX520, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

Contextual Info: X3 Frequency Multiplier 50Ω ZX90-3-452+ Output 3000 to 4500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature -55°C to 100°C RF Input Power 20 dBm • • • • broadband low conversion loss, 14.7 dB typ. high rejection F2, and F4, 55 dBc typ.

zx90-2-19

Contextual Info: X2 Frequency Multiplier 50Ω ZX90-2-19+ Output 2200 to 3800 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power, 25°C 20 dBm • broadband • low conversion loss, 10.5 dB typ. • rugged construction

TRANSISTOR 726

Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

Contextual Info: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 Features •       GaN on SiC Depletion-Mode Transistor Technology Internally Matched

JA1242

Abstract: ZX90-2-19
Contextual Info: X2 Frequency Multiplier ZX90-2-19+ 50Ω Output 2200 to 3800 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power, 25°C 23 dBm Permanent damage may occur if any of these limits are exceeded.

Contextual Info: Surface Mount SBA-2-14+ SBA-2-14 Power Splitter/Combiner 2 Way-0° 50Ω 1200 to 1600 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation 2W max. 0.125W max.

ed1232

Contextual Info: Coaxial DC Pass ZB4PD1-23DC+ ZB4PD1-23DC Power Splitter/Combiner 4 Way-0° 50Ω 1200 to 1600 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation 10W max.

Zener C212

Abstract: diode zener c71 zener ma 1150
Contextual Info: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

SBB-2-13

Abstract: SM31
Contextual Info: Surface Mount Power Splitter/Combiner 2 Way-0° 50Ω 950 to 1300 MHz Maximum Ratings Features Operating Temperature Storage Temperature SBB-2-13 • very stable performance over temp. range • excellent insertion loss, 0.6 dB typ. • excellent isolation, 24 dB typ.

Contextual Info: Ultra-Small Ceramic SCN-2-15+ SCN-2-15 Power Splitter/Combiner 2 Way-0° 50Ω 1100 to 1450 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 20W* max. *derate linearly to 6W at 100°C ambient.

SBA-2-14

Abstract: S-21350 MCL 0 splitter "RF Power Splitter" R S
Contextual Info: Surface Mount SBA-2-14+ SBA-2-14 Power Splitter/Combiner 2 Way-0° 50Ω 1200 to 1600 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation 2W max. 0.125W max.

JCIR-152H

Abstract: BG291
Contextual Info: Surface Mount Image Reject Mixer JCIR-152H+ Level 18 LO Power +18dBm 1000 to 1500 MHz Maximum Ratings Operating Temperature Features • excellent image rejection, 28 dBc typ. • excellent L-R isolation, 43 dB typ. • low conversion loss, 7.5 dB typ. • aqueous washable

Contextual Info: 1214-300V R1 1214-300V 300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to

SBA-2-14

Contextual Info: Surface Mount SBA-2-14+ SBA-2-14 Power Splitter/Combiner 2 Way-0° 50Ω 1200 to 1600 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation 2W max. 0.125W max.

1214-300V

Contextual Info: 1214-300V R1 1214-300V 300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to