1200V,20A SCR Search Results

E80276

Abstract: VR300 VR-300
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM20DA/CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM20DA/CA/C1A-XXF • IDC • VRRM DC current . 20A Repetitive peak reverse voltage . 600/800/1000/1200V

RM20HA-XXF

Abstract: E80276
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM20HA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM20HA-XXF • IDC • VRRM DC current . 20A Repetitive peak reverse voltage . 600/1000/1200V • trr Reverse recovery time . 0.8µs

Contextual Info: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 • 1200V, 20A 2x10A Rectifier Diodes • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Frequency Operation • High Speed Low Loss Switching •

schottky rectifier diode

Abstract: LE17 0835 SWITCHING schottky diode 1200v
Contextual Info: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 • 1200V, 20A 2x10A Rectifier Diodes • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Frequency Operation • High Speed Low Loss Switching •

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

power Schottky bridge

Abstract: Schottky bridge SPA555 SPA555M SPA555N spa555ml
Contextual Info: SPA555 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: SPA555 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/

30TPS12PBF

Abstract: 30TPS 30TPS12
Contextual Info: Bulletin I2180 11/04 SAFEIR Series 30TPS12PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1200V Description/ Features The 30TPS12PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

SPA555N

Abstract: SPA555 SPA555M spa555ml
Contextual Info: SPA555 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/

Contextual Info: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

30TPS08PBF

Abstract: 30TPS12 30TPS P035H
Contextual Info: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

Contextual Info: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

p623f

Abstract: 600V1200V p623
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

NTE5374

Abstract: NTE5375 0937m
Contextual Info: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

20A igbt

Abstract: igbt 1200V 20A igbt 20A 1200v igbt 40a 600v current diode 600v 20a IGBT 600v 20a diode IGBT 120A 1200V diode 20khz DIODE 20A 600V
Contextual Info: PROVISIONAL IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Ultrafast npt IGBT Technology • 10 µs Short Circuit capability • Square RBSOA. • New Generation of Antiparallel diode with low Vf

semikron skiip nab 126

Abstract: Semikron skiip 24 nab welding inverter 100A WITH PFC brake rectifier motor V23990-P630-A-PM 12 nab 126 v1 semikron skiip 23 nab 126 v1 V23990-P517-C-PM semikron skiip nab 12 V23990-P760-A-PM
Contextual Info: Power Modules Power Integrated Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment. With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power

Contextual Info: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

NTE5374

Abstract: 1200v scr NTE5375 300A 1200V SCR 355a transistor 4700
Contextual Info: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching, 275 Amp, TO93 Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

NTE5595

Abstract: NTE5594 NTE5596
Contextual Info: NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier SCR , 850A Ratings: (Maximum Values at TJ = +125°C unless otherwise specified) Repetitive Peak Voltage, VDRM NTE5561 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V

NTE5561

Abstract: scr 1a 1200V NTE5595 NTE5594 NTE5596 scr 1a 1200V datasheet
Contextual Info: NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier SCR 850 Amp, TO200AC Ratings: (Maximum Values at TJ = +125°C unless otherwise specified) Repetitive Peak Voltage, VDRM NTE5561 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V

Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package