1200V 5A DIODE Search Results

SIDC06D120E

Contextual Info: Preliminary SIDC06D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D120E 1200V ICn 5A A This chip is used for:

GD5NB120SZ

Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
Contextual Info: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE

sttab12d

Abstract: dimmer diagrams IGBT STGD5NB120SZ-1 STGD5NB120SZ
Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V INTERNALLY CLAMPED PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 1.8 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY

qm5hg-24

Abstract: TRANSISTOR 545 QM5hg
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • • • • IC Collector current . 5A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 5

Contextual Info: CSD05120 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=5A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

diode Vr 1200v

Abstract: "Power Diode" 1200V 5A DIODE ERW08-120 1200V fast
Contextual Info: ERW08-120 5A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

SML05SC12D3

Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

Contextual Info: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT5SC120K 1200V 5A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

Contextual Info: APT05DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 5A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

STA512

Abstract: A512 STTA5 DPAK JEDEC OUTLINE TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE ISOWATT220AC STTA512B STTA512B-TR STTA512D STTA512F
Contextual Info: STTA512D/F/B/FP TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 1200V trr (typ) 45ns VF (max) 2.0V K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

LE17

Abstract: MIL-PRF19500 QR217 SML05SC12DLCC3
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12DLCC3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

Contextual Info: CSD05120–Silicon Carbide Schottky Diode VRRM = 1200V Zero Recovery Rectifier IF = 5A Qc = 28nC Features • • • • • • • Package 1200 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

Contextual Info: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

JIS B 0409

Abstract: igbt STM marking IGBT 2000V .50A
Contextual Info: STTA512D/F/B TURBOSWITCH tm ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 5A I f a v V 1200V rrm 45ns trr (typ) V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

SCS105KG

Contextual Info: SCS105KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: STTA512D/F/B TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V trr (typ) 45ns V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

Contextual Info: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

U4 Package

Contextual Info: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSX05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared

msc 0645

Abstract: MSICSN05120
Contextual Info: MSiCSN05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared

Contextual Info: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSN05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared