1205 SO8 Search Results

DS56

Abstract: DS60 LM60
Contextual Info: DS56 Dual Temperature Comparator • Factory calibrated for sensitivity of +6.20 mV/°C and thermometer accuracy of ±2.0°C over the 0°C to 85°C range and ±3°C over the 40°C to 0°C and +85°C to +125°C range. • Measurement range of –40°C to +125°C

Si9420DY

Contextual Info: Si9420DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter

ups circuit diagrams

Abstract: UPS circuit diagram UPS diagrams Internal circuit diagram of ups 500 UPS diagrams CIRCUIT DIAGRAM UPS circuit diagram of UPS digital UPS circuit diagram block diagram of ups TFF2207
Contextual Info: Preliminary Technical Data TFF2207T Edition 10/00 2.5GHz RF Mixer Short Description Features The bipolar integrated circuit TFF2207T is an active unbalanced down converter mixer for applications like Digital European Cordless Phones DECT , Personal Communications Systems (PCS), Wireless Local Loop and

SC2433SW

Abstract: sc2433 in4148 smd diode rdac SC2433EVB dual fet driver
Contextual Info: SC2433 Tri-Phase Current Mode Controller POWER MANAGEMENT Description PRELIMINARY Features The SC2433, a tri-phase, current mode controller is designed to work with Semtech smart synchronous drivers, such as the SC1205 or the SC1405 to provide the DC/DC converter solution for the most demanding Microprocessor applications. Input rather than output current sensing is used to guarantee

FDS6294

Contextual Info: FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6294

Contextual Info: FDS6294 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description • 10 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and

FDS4410A

Contextual Info: FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features • 10 A, 30 V. General Description RDS ON = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 V This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has

FDS6294

Contextual Info: FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6690A

Abstract: FDS6690
Contextual Info: FDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDS6294

Abstract: I22 marking
Contextual Info: FDS6294 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDS6294 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6690A

Contextual Info: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDS6690A

Abstract: SO-8 gs 069 MOSFET SO-8 gs 069
Contextual Info: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

m48t35

Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
Contextual Info: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below

transistor power mx 614

Abstract: S81250PG S-8435 S-81250PG S81233PG sot693 cmos 4061 S-8430AF S80741AN SM740
Contextual Info: SII Low Power CMOS ICs Seiko Instruments Dalactlaa V olUgt • Features *2.4% Ip A typ 1.5 to 5.1V* 5% typ 1 to 15V 0.75mA max CMOS 0.5 to 7mA Nch Ope ndrain • Output Forms: Nch Ope ndrain, CMOS L • 3 Package Types: TO-92, SOT-89-3 and SOT-23-5 >High Precision

SO8 Wide Package

Abstract: 1205 SO8 4463 SO8 WIDE TSSOP8 texas M24128 M24256 M24256A M24C01 M24C02
Contextual Info: Serial EEPROMs I2C, SPI AND MICROWIRE BUSES ST EEPROM products are the standard of reference in the industry, built with sub-micron technology and offering leading performances. The ranges include serial access EEPROMs with the 400 KHz, I2C low cost, 2-wire bus and densities up to 256 Kbit; fast 1 MHz

6690a mosfet

Abstract: FDS6690A 6690a
Contextual Info: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

4945n

Abstract: NTMFS4945NT1G NTMFS4945NT3G
Contextual Info: NTMFS4945N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTMFS4945N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

LM78L12ACH

Abstract: 1N4319 LM78L05ACH 78L05V
Contextual Info: LM78LXX National ÆÆ Semiconductor LM78LXX Series 3-Terminal Positive Regulators General Description Features The LM78LXX series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications. When used as a zener diode/resistor combination replacement, the LM78LXX

X1205S8IZ

Abstract: X1205 X1205S8 X1205S8I X1205V8 X1205V8I X1205V8Z epson MARKING CODE MC epson 32.768KHZ CRYSTALS -oscillator
Contextual Info: X1205 Data Sheet September 23, 2005 2-Wire RTC Real Time Clock/Calendar • • • • • • • • • • • • • FEATURES • Real Time Clock/Calendar —Tracks time in Hours, Minutes, and Seconds —Day of the Week, Day, Month, and Year • 2 Polled Alarms Non-volatile

A1H11

Abstract: A0D11 A1H20 A1D20 A0H12 A1D10 A1M10 A1D21 X1205S8 X1205V8
Contextual Info: X1205 Data Sheet May 2, 2006 • • • • • • • • • • • • • 2-Wire RTC Real Time Clock/Calendar FEATURES • Real Time Clock/Calendar —Tracks time in Hours, Minutes, and Seconds —Day of the Week, Day, Month, and Year • 2 Polled Alarms Non-volatile

FDS8858CZ

Abstract: fds8858
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s