120JX Search Results

2521P08V

Abstract: date sheet 9th 10th
Contextual Info: 1 * * * 2521 V Series * * * Material : * Insulator : Nylon 6/6 UL 94V-0 * Contact : Brass RoHS COMPLIANT 2521P * V j^ O ^ 1 2 3 1. No. o f circuits .098 ±.002 r \ 2. Plating: r> c\ ) rK >) K) 00.90 / 0.035 0=Tin plated 120jx ” min over 30 x ” min. nickel overall

Contextual Info: ANALOG +2.5 V to +5.5 V, 120jxA, 2-Wire Interface, DEVICES Voltage Output 8/10/12-Bit DACs Preliminary Technical Data AD5301/AD5311/AD5321* FEATURES AD5301: Buffered Voltage Output 8-Bit DAC AD5311: Buffered Voltage Output 10-Bit DAC AD5321: Buffered Voltage Output 12-Bit DAC

Contextual Info: 1 2 3 Order Inform ation * * * 2 567 Series * * * Material : * Insulator PBT U L 9 4 V -0 * C ontact : Brass 2567P ï î * ÎQQ 1 2 3 B 4 1. No. o f circu its 2. Plating: T=Tin plated 120jx” min. over 3 0 ~ 5 0 jj” nickel overal U=Gold flash over 3 0 ~ 5 0 ^ ” nickel overall

Contextual Info: Ordering Information: 2595S « * 001 1 2 1. No. of circuits 2. Plating: T=Tin plated 120jx ” min over 30 x ” min. nickel overall U=Gold flash over 30n ”min. nickel overall * * * 2595 Series * * * Material: * Insulator : PBT, UL 94V-0 * Contact: Phosphor Bronze

Contextual Info: RoHS COMPLIANT * Material: Phosphor Bronze * Wire Ranges : AWG 22-28 * Plating : Tin plated 120jx ” min over 30jx ” min. nickel overall 0.2±0.05 .008±.002 B B oin f vo\i _ :I o 047 3.95±0.25 1.70±0.25 .067±.001 D SEC: A-A u in » CN < O < -H in ,t

Contextual Info: / T T SGS-THOMSON M29W004T A 7 # . [M»[g[LI gmMD(gS_ M29W004B 4 Mb (x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10jis typical

Contextual Info: JW> S’- VA MX812 MX* COM, INC. DATA BULLETIN Advance Information January 1992 Voice Store and Retrieve Codec Features and Applications • Half-Duplex Voice Storage and F etrieval * Selectable Sample Rates and “Memory Size” • Serial Bus [lProcessor Control

Contextual Info: 5 7 . SGS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIM IN ARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

1206 package resistor,1k resistor

Abstract: philips smd 1206 resistor
Contextual Info: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE

ft22n

Contextual Info: Semiconductor, Inc. TC17 Series PWM STEP-UP SWITCHING REGULATOR FEATURES GENERAL DESCRIPTION • The TC17 Series ICs are PWM control step-up switch­ ing regulators. Their unique design keeps external compo­ nents to a minimum. The TC171AXXIC consists of an oscillator circuit, PWM

Contextual Info: SED1540 CMOS DOT MATRIX LCD CONTROLLER/DRIVER S-MOS Systems, Inc. October, 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. • 150 RiverOaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200» Fax: (408) 922-0238 • GOCmSSfl 5b2 ■ THIS PAGE INTENTIONALLY BLANK

Vitramon

Abstract: GRM42-6C0G102J50 zener 1206 5.1 v GRM42-6X7R104K50 GRM42-6C0G121J50 C17AH DB-55008L-175 EEVHB1V100P EXCELDRC35C PD55008L
Contextual Info: DB-55008L-175 BOM Component ID Description Manufacturer Part Code B1 Ferrite Bead Value Case size PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6C0G121J50 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102J50

Contextual Info: u im TECHNOLOGY LT1495/LT1496 1.5 ji A Max, Dual and Quad Precision Rgil-to-Rail Input and Output Op Amps F€OTUR€S DCSCMCTIOn • Low Supply Current: 1.5|aA Max ■ Rail-to-Rail Input and Output ■ Low Offset Voltage: 375pV Max RPPUCOTIOnS The LT 1495/LT1496 are the lowest power Is < 1.5jiA op

A6165

Abstract: fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105
Contextual Info: Lrttte Rebete are one of Ohmite's more economical lines o i low wattage resistors. Constructed of a pure carton film deposited on a higi\-flrade c eram c body, these unit* orter better stability perfor­ m ance than comparable carbon composition resistors.

C17AH

Abstract: GRM42-6C0G102J50 DB-55008L-175 EEVHB1V100P EXCELDRC35C PD55008L 1206 package resistor,1k resistor
Contextual Info: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE

Contextual Info: SGS-THOMSON M29F102B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIM IN ARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

M29FD40

Contextual Info: $ 7. S C S -T H O M S O N » » I L I » » M29F040 ® SINGLE SUPPLY _ 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY PRELIMINARY DATA • VERY FAST ACCESS TIME: 70ns ■ 5V± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5V± 10%SUPPLY VOLTAGE in READ