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    transistor C 2240

    Abstract: IEC61249-2-21 JESD22 JESD22-A114
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSZ120P03NS3E IEC61249-2-21 120P3NE transistor C 2240 IEC61249-2-21 JESD22 JESD22-A114

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    Abstract: No abstract text available
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSZ120P03NS3E IEC61249-2-21 120P3NE 70angerous

    PG-TSDSON-8

    Abstract: 120P3N
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSZ120P03NS3E IEC61249-2-21 120P3NE 726-BSZ120P03NS3EG PG-TSDSON-8 120P3N