1210C Search Results

HM62V8512C

Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA0015
Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210C (Z) Rev. 3.0 Jul. 23, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

1210C-39

Abstract: 1210C 1210CR KJG50 kjg45 12-10C5
Contextual Info: CHIP INDUCTORS 1210C SERIES • FEATURE ◎ Small and lightweight surface mounting type. ◎ Coil body made of ceramic material in chip form. ．High Q at high frequency. ．High self-resonance frequency. ．Inductance Range:4.7~2200nH. ◎ Applictable to 7.96MHz~100MHz.

Contextual Info: FREQUENCY: OVERALL STABILITY : AEL MODEL No. 8.000000MHz +/-100PPM 1210CSN 1 Stability options are inclusive of: Calibration Tolerance at 25°C, Operating Temperature Range, Supply Voltage Change, Load Change, Ageing, Shock & Vibration. Parameter Code Storage Temperature Range

1210CSN

Abstract: 64.000000mhz
Contextual Info: FREQUENCY: O VERALL STABILITY : AEL MODEL No. 64.000000MHz +/-100PPM 1210CSN 1 Stability options are inclusive of: Calibration Tolerance at 25°C, Operating Temperature Range, Supply Voltage Change, Load Change, Ageing, Shock & Vibration. Parameter Code Value

Contextual Info: 1210C Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current3 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3

GR 733

Abstract: ttl crystal module rh10 100PPM 1210B 1210C 25PPM
Contextual Info: FREQUENCIES AVAILABLE 40kHz~150MHz Note 1 MODEL DESIGNATOR OVERALL STABILITY 1210A 1210B 1210C ± 25PPM ± 50PPM ±100PPM 7.62 12.9 Pin 1 Pin 4 Pin 8 Pin 5 o Stability options are inclusive of: Calibration Tolerance at 25 C, Operating Temperature Range, Supply Voltage

ael 1210csn

Contextual Info: FREQUENCY: OVERALL STABILITY AEL MODEL No. 9.830400MHz +/-100PPM 1210CSN Note 1 Stability options are inclusive of: Calibration Tolerance at 25°C, Operating Temperature Range, Supply Voltage Change, Load Change, Ageing, Shock & Vibration. Parameter Code Value

1210CSN

Abstract: 20Mhz crystal
Contextual Info: FREQUENCY: OVERALL STABILITY : AEL MODEL No. 6.000000MHz +/-100PPM 1210CSN N0* 1 Stability options are inclusive of: Calibration Tolerance at 25°C, Operating Temperature Range, Supply Voltage Change, Load Change, Ageing, Shock & Vibration. Parameter Code

Contextual Info: FREQUENCY: OVERALL STABILITY : AEL MODEL No. 80.000000MHz +/-100PPM 1210CSN 1 Stability options are inclusive of: Calibration Tolerance at 25°C, Operating Temperature Range, Supply Voltage Change, Load C hange, Ageing, Shock & Vibration. Parameter Code Unit

1206FC

Abstract: 1202C 1202FC 1202UFC 1206C 1206UFC 1210C 1210FC 1210UFC
Contextual Info: 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 1202C - 1210C 1202FC - 1210FC 1202UFC - 1210UFC ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current @TC Io (Vrwm)

10GWJ2CZ

Abstract: 10GWJ2CZ47C 10MWJ2CZ47
Contextual Info: SCHOTTKY BARRIER TYPE RECTIFIER STACK 10GWJ2CZ47C 10 J,M WJ2CZ47 Unit in mm SW ITCHING TY P E POW ER SU PPLY APPLICATIO N . CO M VERTER & CHOPPER APPLICATIO N . - 10.3 MAX • • • 03.2 ±0-2 Repetitive Peak Reverse Voltage : V r r m = 40, 60, 90V

H1 MARKING

Contextual Info: T O SH IB A 5JLZ47 TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5JLZ47 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • ^ 3.2 ± 0.2 10.3 M AX. Repetitive Peak Reverse Voltage : V r r m = 600 V Ultra Fast Reverse-Reeovery Time : trr=50ns

TOSHIBA RECTIFIER

Contextual Info: 30NWK2CZ47 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type 30NWK2CZ47 Switching Mode Power Supply Application Converter & Chopper Application • Repetitive peak reverse voltage: VRRM = 100 V • Peak Forward Voltage: VFM = 0.83 V max

STPR1660CT

Abstract: STPR1210CT 1220CT
Contextual Info: LITE-ON SEMICONDUCTOR 1210CT thru 1260CT REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 12 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS TO-220AB FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

MLF3216

Abstract: Inductor tdk mlf3216 nl2520 ferrite bead tdk NLC3225 MLF3225 chip EMI filter
Contextual Info: TDK SAMPLE KITS A DIVISION Filters, Beads, Inductors Order No. ACL2520L Series- Ferrite Chip Inductor ACL3225S Series- Ferrite Chip Inductor ACF4532 Series- Ferrite Chip EMI Filter ACF3218 Series- Ferrite Chip Inductor ACA Series- EMI Suppressor Array ACC HF70,50,30 Series- EMI Suppressor

ESD test plan

Abstract: CGA-0116 0116 led JESD22-A103 1100C JESD22-A114 RQR-103796 1500C
Contextual Info: Reliability Conditional Qualification Report CGA-0116 303 S. Technology Ct, Broomfield CO, 80021 Phone: 800 SMI-MMIC http://www.sirenza.com Document RQR-103796 Rev A 1 CGA-0116 Reliability Qualification Report I. Qualification Overview The CGA-0116 family of products has demonstrated reliable operation by passing all

npo 22j

Abstract: C2012COG1H capacitor type 104z 50v capacitors 22j NPO ceramic Y5V 104Z V104Z CC0603HNP0120J CC0805C CC0805HNPO C3216Y5V1C105
Contextual Info: CAPACITORS C A P AC ITO R S Ceramic Chip TDK’s n4k> Sub-Miniature chip capacitor additions answer tbe electronics industry’s needfo r , bigber density packaging. TDK’s advanced technology allows fo r smaller size, bigbest capaci­ tance, increased reliability, and automated assembly. Applications include computers and

Contextual Info: SLVU748 – August 2012 Using the TPS84259: Negative Output Voltage, up to 15-W, Integrated Power Solution EVM Introduction The TPS84259EVM-001 Evaluation Module is designed as an easy-to-use platform that facilitates an extensive evaluation of the features and performance of the Integrated Power Solution IPS device. This

CMG07

Abstract: 10lc48 CMG08 CMG03 CRH02 CRG01 CRG02 CRS14 CRS15 TPC6K01
Contextual Info: 製品カタログ 2009-3 東芝半導体 製品カタログ ダイオード 中小型編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1. ダイオード体系図 . 3

30QWK2CZ47

Contextual Info: 30QWK2CZ47 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type 30QWK2CZ47 Switching Type Power Supply Application Converter & Chopper Application • Repetitive peak reverse voltage: VRRM = 120 V • Peak Forward Voltage: VFM = 0.85 V max

Contextual Info: T O SH IB A 5GWJZ47 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 5G W J Z 4 7 Unit in mm HIGH SPEED RECTIFIER APPLICATION • • • 10.3MAX. = 40V : !F AV = 5a : VpM = 0.55V (Max.) Repetitive Peak Reverse Voltage Average Forward Current Low Forward Voltage

10dl2cz

Abstract: 10FL2CZ47A 10DL2CZ47A 10FL2CZ 10GL2CZ 10GL2CZ47A
Contextual Info: 10DL2CZ47A,10FL2CZ47A,10GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage •

Contextual Info: T O SH IB A 20FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 7 n F W H f 7 J 7 M SWITCHING TYPE PO W ER SUPPLY APPLICATION U n it in mm .10.3M A X._j CONVERTER & CHOPPER APPLICATION • Peak Forw ard Voltage : V f M — 0.47V •

Contextual Info: TO SH IBA 5FWJ2CZ47M TO S H IB A SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2CZ47M SW ITCHING TYPE POWER SUPPLY A PP LIC A TIO N U n it in mm 10.3MAX. CONVERTER & CHOPPER APP LIC A TIO N • Repetitive Peak Reverse Voltage • Average Output Rectified Current : I q = 5A