1215 Search Results

Contextual Info: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE121020FB 1 / 121220FB 1 / 121520FB 1 / 121820FB 122220 FB 1 / / 1 122720FB / 1 123320FB 1 / 123920FB 1 / 124720FB 1 I 125620FB 1 / 126820FB / 1 128220FB / 1 121030FB / 1 121230FB / 1 121530FB / 1 121830FB

Contextual Info: i H IR D ANGLE PROJECTION ECWH 12362R V / 1 / 1 / 1 / 1 12392ROV 12432ROV 12472R()V 12512R()V 12562R()V 12622R()V 12682R()V 12752R()V 1 / 12822ROV 1 / 12912R()V / 1 / 1 I 1 1 / I 1 / 1 / 1 1 1 / 1 12103ROV 12113ROV 12123R()V 12133R()V 12153R()V 12163R()V

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: DRS-1215 14-outlets, 15-ft cord, 3840 joule, Rackmount Economy Surge Suppressor Highlights 14 outlets / 15-ft. cord 3840 joule rating

Contextual Info: Ultra Low Noise ZX60-1215LN+ ZX60-1215LN Amplifier 50Ω, 800 MHz to 1400 MHz Features • • • • • • • Ultra low noise figure 0.4 typ. 11V-13V operation Good IP3, 27 dBm typ. Reverse voltage connection protected Small size Low cost Protected by US Patent 6,790,049

960-1215 MHz transistor 20W

Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

AJT006

Abstract: ASI10544 transistor j852
Contextual Info: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz

MZ0912B50Y

Contextual Info: MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG L N FEATURES: J O A B • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base

TAN300

Contextual Info: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

TACAN

Abstract: SD1540 SD1540-08 SD1540-8
Contextual Info: SD1540-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS typ. IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz 290 WATTS (typ.) TACAN 960 - 1215 MHz 6.3 dB MIN. GAIN

7233

Abstract: 1431 BEAU 78
Contextual Info: m o lex HARDWARE OPTIONS BEAU Terminal Biodo Quick Connect Part Numbers Product QC Series Size 12 13 14 18 21 24 25 26 28 .187 1210 1211 1212 1213 1214 1215 .250 1310 1311 1312 1313 1314 1315 .187 1410 1411 1412 1413 1414 1415 .250 1810 1811 1812 1813 1814

RCA 7651

Abstract: CCS11 7651 RCA tube 83 Radio Corporation of America OP Megger
Contextual Info: 7651 Beam Power Tube CERAM IC-M ETA L SEALS COAX IAL-ELEC TRO DE STRUCTURE "O N E -P IE C E " ELECTRODE D ESIG N INTEGRAL RADIATOR FO RCE D -A IR COOLED 27-KW PEA K-PULSE POWER IN P U T U P T O 1215 Me M A T R IX -T Y P E, O XID E-CO A TED , U N IPO T EN TIA L CATHODE

Contextual Info: 4637 Beam Power Tube CERMOLOX R F Power A m p lifier and O s c illa to r to 1215 MHz M atrix-T yp e Cathode 340 Watts CW Power Output 105 Watts CW Power at 400 MHz Output a t 1215 MHz Conduction Cooled E L E C T R IC A L H eater for Matrix-Type Oxide-Coated

8226

Abstract: AS-2501 AS-201 I65AS 8226 equivalent AS2501 92CM-I20I5
Contextual Info: 8226 B e a m P o w e r T u b e CERMOLOX HIGH GAIN-BANDWIDTH PRODUCTS 340 WATTS CW POWER OUTPUT AT 400 Me 105 WATTS CW POWER OUTPUT AT 1215 Me FORCED-AIR COOLED INTEGRAL RADIATOR M ATRIX-TYPE CATHODE F o r C o m p act A i r c r a f t , M o b i l e , and S t a t i o n a r y

Contextual Info: Frequency Mixer TUF-5MHSM Typical Performance Data RF IN (MHz) 10.1 70.4 130.6 190.9 251.1 311.4 371.6 431.9 492.1 552.4 612.6 672.9 733.1 793.4 853.6 913.9 974.1 1034.4 1094.6 1154.9 1215.1 1275.4 1335.6 1395.9 1456.2 1516.4 1576.7 1636.9 1697.2 1757.4

TACAN

Abstract: M115 SD1528-06
Contextual Info: SD1528-06 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W typ. IFF 1030 - 1090 MHz 15 W (min.) DME 1025 - 1150 MHz 15 W (typ.) TACAN 960 - 1215 MHz REFRACTORY GOLD METALLIZATION

OFL-12

Abstract: grinding
Contextual Info: DOCUMENT NUMBER 39052-2318-01 OFL-12 MASS PRODUCTION POLISHER PRODUCT SPECIFICATION Seiko Instruments Inc. Components Overseas Sales Dept. 1-8, Nakase, Mihama-ku Chiba-shi, Chiba-ken, 261, Japan Telephone: 043-211-1214, 1215 Facsimile: 043-211-8035 DOCUMENT NUMBER 39052-2318-01

Contextual Info: DOCUMENT NUMBER NDD-65I4-01 SW-012 Series Multi-Mode 1 x 2 OPTICAL SWITCH TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Components Sales Dept. 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261 JAPAN Telephone : 043-211-1214 -1215 Facsimile : 043-211-8035

SW011

Abstract: SW-011 current measuring circuit NDD-49I2-01
Contextual Info: DOCUMENT NUMBER NDD-65I2-01 SW-011 Series Single-Mode 1 x 2 OPTICAL SWITCH TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Components Sales Dept. 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261 JAPAN Telephone : 043-211-1214 -1215 Facsimile : 043-211-8035

Contextual Info: User Manual October 1998 group Lucent Technologies Bell Labs Innovations 497AE and 1215E Boundary-Scan Master 2 Advanced Operational Mode Features • The BSM2 is available in 2 versions: — The 497AE is available in a 28-pin SOJ pack­ age. — The 1215E device is available in a 48-pin TQFP

Contextual Info: UNCONTROLLED DOCUMENT REV, A LOCK PART NUMBER REV. S S — L X R 4 9 15 S G D 1215 A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & REDRAWN IN 3D. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25 X W ASH ER PARAMETER MIN c C 2 0 .0 0 [ 0 . 7 8 7 ] I > M X P

33482-1241

Contextual Info: 20 ASSEMBLY PART NUMBER 33482-1201 33A82-1202 33482-1203 33482-1204 33482-1205 33482-1206 33482-1207 33482-1208 33482-1209 33482-1210 33482-1211 33482-1212 33482-1213 33482-1214 33482-1215 33482-1216 33482-1217 33482-1218 33482-1219 33482-1220 33482-1221 33482-1222

Contextual Info: Plug, 19-way Order No. 121563-0119 121563-0121 121563-0123 121563-0125 Order No. 121563-0120 121563-0122 121563-0124 121563-0126 Designation APD-1BS195 APO-2BS195 APO-3BS195 APO-4B5195 Designation A P D -1AP195 APD-2AP195 A PD -3A P195 APD-4AP19S Code 1 2

HVV0912-800

Abstract: SEMICONDUCTORS INC
Contextual Info: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor