122 OLT Search Results

Contextual Info: I COAX CONTACT SERIES S ize 8 C oax - H igh P ow er/H igh V oltage C ontacts PDM 15 Series High Power Specifications / Interface Drawings .119 Product Data . 120-122

STA 401 semiconductor

Contextual Info: CS-122 SEMICONDUCTOR DUAL LEVEL SENSING IC with SCHM ITT TRIGGER DESCRIPTION The CS-122 is a dual m o n o lith ic in te g ra te d c irc u it level d e te c to r w ith c o n ­ tro lle d h yste re sis and is d esig n ed fo r a p p lic a tio n s re q u irin g th e fu n c tio n o f a

6L6GC

Abstract: 6L6GC tube PENTODE pl tube 6L6gc 6L6GC data 6L6-GC PENTODE pl 36
Contextual Info: Beam Power Pentode Construction . Octal T-12 B a s e . 6 or 7 Pin, B6-122, B6-148 B7-12, B7-111 or B7-119 B a s in g . 7S Outline . 12-15

FCH30A06

Contextual Info: SCHOTTKY BARRIER DIODE FCH30A06 30A / 60v 3.1 .122) FEATU RES o T0-220AB Fully Molded ODual Diodes - Cathode Common o Low Forw ard V oltage Drop O H igh Surge Capability 0 30 V olts through 60 Volts T ypes Available O Tj = 150°C operation FCH30A. <1

Contextual Info: 20A / 60V SCHOTTKY BARRIER DIODE FCH20A06 3.1 122 »MAX FEATURES u 4.8U 89 MAXi o TO-220AB Fully Molded 10.3i.405l ' MAX A }-6.9(272) 53T2Ï5Î 2.85(.112> ODual Diodes - Cathode Common i w .m \ 15.41 ,606) T7ÎT5531 OLow Forw ard V oltage Drop MAX5' <-'l'6»MAX

3001C

Abstract: 3004C HER3001C HER3005C
Contextual Info: HER3001C THRU HER3005C HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 30 Amperes .638 16.2 Low leakage. .236(6.0) .197(5.0) Low power loss,high efiiciency. .106(2.7) .067(1.7) MAX High current capability. High surge capability. .122(3.1)

Diode 20A/30v

Abstract: FCH20A03L
Contextual Info: SCHOTTKY BARRIER DIODE FCH20A03L 20 A/ 30V 3.K-122 FEATURES o T0-220AB Fully Molded ODual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability o T j = 150°C operation 2.5Ì.0MI FCH20A.L Dimensions in mm Inches) Approx. Net Weight : 1.75 Grams

LB 122 transistor

Abstract: TRANSISTOR tip 126
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP I 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-B ase Voltage: TIP125 : TIP126 : TIP127 C o lle cto r-E m itte r Voltage

HER3001-3005

Abstract: 3001C 3004C CJ125 HER3004C
Contextual Info: HER3001-3005 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 30 Amperes .638 16.2 Low leakage. .236(6.0) .197(5.0) Low power loss,high efiiciency. .106(2.7) .067(1.7) MAX High current capability. High surge capability. .122(3.1) .083(2.1)

FCQ20A03L

Abstract: GCQ20A03L wines
Contextual Info: SCHOTTKY BARRIER DIODE GCQ20A03L FCQ20A03L 20A/30V 1.40 55) 1.2 047) FEA TU RES KM U09) 3.M.122) MAX 3.7Î.U5] 10.3Î.4ÛS1 o TO-220AB : GCQ20A03L O T0-220AB Fully Molded Isolation : FCQ20A03L oDu'al Diodes - Cathode Common M A Y 5’ 4.K.16DMAX OLow Forw ard V oltage Drop

Contextual Info: BL GALAXY ELECTRICAL KBJ4A - - - KBJ4M VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ4 Rating to 1000V PRV Surge overload rating to 150 Am peres peak .189 4.8 .173(4.4) .134(3.4) .122(3.1) Ideal for printed circuit board

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120

TIC 122 Transistor

Abstract: T-con tic 122
Contextual Info: BL GALAXY ELECTRICAL KBJ8A - KBJ8M VOLTAGE RANGE: 50 - 1000 V CURRENT: 8.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ8 Rating to 1000V PRV Surge overload rating to 200 Am peres peak .203 5.16 .189(4.8) .134(3.4) .122(3.1) Ideal for printed circuit board

tic 122

Contextual Info: BL GALAXY ELECTRICAL KBJ6A - KBJ6M VOLTAGE RANGE: 50 - 1000 V CURRENT: 6.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ6 Rating to 1000V PRV .189 4.8 .173(4.4) Surge overload rating to 150 Am peres peak .134(3.4) .122(3.1) Ideal for printed circuit board

Contextual Info: SCHOTTKY BARRIER DIODE FCH08A06 SA/eov 3.1 122 M AX FEATURES 4.B(.189> ’ MAX] o Sim ilar to TO-220AB Case 10.3(.405) ' MAX ^ 'TfiCTTSJ1* A 6.91272Ï o Fully Molded Isolation OT34Ä) I 15.41.606i R8T533Ï '2.85(1121 a a i o Dual Diodes-Cathode Common o Low Forw ard V oltage Drop

CPGA144

Contextual Info: QL16X24B pASIC 1 FAMILY Very-High-Speed 4K 12K Gate CMOS FPGA PRELIMINARY DATA pASIC HIGHLIGHTS .4000 usable gates, 122 input pins B Very High Speed - ViaLink metal-to-metal programmable-via anti­ fuse technology, allows data path speeds over 150 MHz, and logic cell

160X80

Abstract: CM16080-2
Contextual Info: CM16080-2 98 89.16 83.3 9.8 10 6.4 DOTS 160X80 13 41.56 47.56 60 75 80 2.54 9.1 1.6 0.52 0.48 0.48 7 0.52 14.2 89.16 98 14 122 AB S OLUT E MAXIMUM R AT ING S ME C HANIC AL DAT A Item S ymbol Min. Max. S upply V oltage Logic S upply V oltage(LC D) Input V oltage

12gb7

Abstract: 12G-B7 12G B7 B7-119 Scans-0017283 B8-118
Contextual Info: 12G-B7 BEAM POWER TUBE 12G B7 is a beam power pentode designed for use as a horizontal deflection amplifier in television receivers utilizing 110 - deflection system picture tube. DIRECT INTERELECTRODE BASE B8-118, B7-119, B6-122, B 5-190 TOP CAP C l-2 Skirted M iniature

diode 10000v

Contextual Info: Il II • Il 'Il III VRE120/121/122 Precision High Temperature Reference Supplies THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES APPLICATIONS • WIDE OPERATING RANGE: -55°C TO +180°C • PRECISION A/D and D/A CONVERTERS

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120

TIP 122 127

Abstract: tip 122 tip 127 TIP 122 100 V tip 121
Contextual Info: f Z 7 SGS-THOMSON HP120/121/122 ^ 7# T IP 1 2 5 / 1 2 6 /1 2 7 G W fô m iO T « ! COMPLEMENTARY SiLICON POWER DARLINGTON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALES TYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

JD127

Abstract: MJ012 6AI diode mj01
Contextual Info: rz S 7 “ 7# G S - T H O M S O M JD 122 M JD 127 N 6ai»igS lLlliSTI*§iMBeS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS < INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK

21UWC

Contextual Info: CMD67-21UWC Series White SMT LEDs CMD67-21UWC Series White SMT LEDs DESCRIPTION AND FEATURES .075±.008 C AT HODE .094 .006 .087±.004 .110±.008 .138±.008 .122±.008 All dimensions in inches. .020±. 004 Surface Mount T echnology • Tape and reel packaged for high-speed autoinsertion.

Contextual Info: Q L16X24B pASIC 1 Family Very-High-Speed CMOS FPGA Rev C pASIC HIGHLIGHTS .4,000 usable ASIC gates, 122 I/O pins Very High Speed - ViaLink metal-to-metal program m able-via antifuse technology, allows counter speeds over 150 MHz and logic cell delays of under 2 ns.