1220AF Search Results
1220AF Price and Stock
TE Connectivity DMC-M-12-20-AFDMC-M 12-20 AF |
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DMC-M-12-20-AF | Bulk | 241 |
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TE Connectivity DMC-M 12-20 AF- Bulk (Alt: ZPF000000000134099) |
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DMC-M 12-20 AF | Bulk | 111 Weeks | 241 |
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DMC-M 12-20 AF |
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DMC-M 12-20 AF |
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TE Connectivity DMC-M12-20AFRectangular Connectors - Housings |Deutsch Te Connectivity DMC-M12-20AF |
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SMC Corporation of America MXS12-20AFGUIDED CYLINDER, AIR SLIDE TABLE, MXS |
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MXS12-20AF | Bulk | 5 Weeks | 1 |
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Xiamen Hongfa Electroacoustic Co.,Ltd. HF116F-1/220AF-2H(257)30A, 220VAC, 2 Form A, AgCdO, Class B, Without Capacitor, |
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HF116F-1/220AF-2H(257) | Bulk | 8 Weeks | 16 |
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1220AF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K9F1208U0C-PCBContextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, |
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB | |
SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor | |
Samsung Flash K9WAG08U1A
Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
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K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A | |
K9F1208U0C-PCB0
Abstract: K9F1208U0C k9f1208u0cpcb0 k9f1208r0c K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C 100ns) K9F1208U0C-PCB0 K9F1208U0C k9f1208u0cpcb0 K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J | |
K9F1G08U0A-PCB0Contextual Info: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) |
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K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0 | |
Contextual Info: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the |
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K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A | |
K9F1208U0C-PCB0
Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T | |
K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
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K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P | |
K9F8G08U0A-P
Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
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K9WBG08U5A K9F8G08U0A 100ns) K9F8G08U0A-P K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0 | |
TwB 75
Abstract: K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes
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K9E2G08U0M TwB 75 K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes | |
K9F2G08U0M-PCB0
Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
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K9K4G08U1M K9F2G08U0M K9XXG08UXM 200mV K9F2G08U0M-PCB0 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M | |
SAMSUNG NAND Flash Qualification ReportContextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, |
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report | |
Contextual Info: Advanced FLASH MEMORY K9E2G08B0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Note1 of Program/Erase characteristics is added 2.Technical note is changed |
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K9E2G08B0M | |
nand hamming code 2k bytesContextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34 |
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K9K4G08U1M K9F2G08U0M K9F2G16U0M 9F2G08U0M nand hamming code 2k bytes | |
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K9W4G08U1M
Abstract: K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx
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K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx | |
K9HCG08U1M-PCB0
Abstract: K9LBG08U0M K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m
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K9MDG08U5M K9LBG08U0M K9HCG08U1M K9XXG08UXM 4224Byte 100ns) K9HCG08U1M-PCB0 K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m | |
K9K8G08U0M
Abstract: K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip
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K9WAG08U1M K9K8G08U0M K9NBG08U5M K9XXG08UXM K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip | |
K9F1G08D0M
Abstract: K9F1G08U0M K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0 | |
512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
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K9K4G08U1M K9F2G08U0M K9F2G16U0M 512M x 8 Bit NAND Flash Memory K9F2G16U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0 | |
K9F1G08U0AYCB0
Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
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K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns 200mV K9F1G08U0AYCB0 K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08 | |
Contextual Info: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) |
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K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns | |
K9K4G08U0M-XIB0
Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
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K9W8G08U1M K9K4G08U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16U0M-PCB0 K9K4G16Q0M-PCB0 K9W8G08U1M-PCB0 K9K4G08U0M-XIB0 K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M | |
K9F1G08Q0AContextual Info: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle |
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K9F1G08Q0A K9F1G08U0A 100ns | |
multiplaneContextual Info: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed 2. Note1 of Program/Erase characteristics is added |
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K9E2G08U0M multiplane |