1220W Search Results

TRANSISTOR npn w2f

Abstract: W2F marking w2f transistor w2f 91 transistor TRANSISTOR NPN, w2f TRANSISTOR w2f w2f 04 transistor marking w2F TDSF1220W transistor W2F 15
Contextual Info: TSDF1220 / 1220R / 1220W / 1220RW VISHAY Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz Applications 3 4 1 2 4 For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV-systems

MARKING CODE W2F

Abstract: TRANSISTOR npn w2f W2F 07 marking w2F marking W2F npn transistor w2f 06 w2f transistor TRANSISTOR w2f w2f 91 transistor W2F marking
Contextual Info: Not for new design, this product will be obsoleted soon TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz

W2F marking

Abstract: w2f 91 transistor TRANSISTOR npn w2f tsdf1220r
Contextual Info: TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC

TRANSISTOR npn w2f

Abstract: marking code W2F w2f transistor TRANSISTOR w2f tsdf1220rw W2f marking marking w2F TRANSISTOR NPN, w2f w2f 91 transistor W2F 07
Contextual Info: TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC

TRANSISTOR npn w2f

Abstract: W2F marking TRANSISTOR npn w2f 96 SOT-23 marking w2f transistor w2f TSDF1220RW TRANSISTOR NPN, w2f TDSF1220W marking W2F npn transistor W2F 15
Contextual Info: TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers

triac 400v 80a

Abstract: T1220 T1220W T1230W marking 44t XXXW
Contextual Info: rrz SGS-THOMSON 1220W T1230W ^ 7# SNUBBERLESS TRIAC FEATURES • Itrm s = 12 A ■ V drm = V rrm = 4 0 0 V to 7 0 0 V ■ EXCELLENT SWITCHING PERFORMANCES ■ INSULATING VOLTAGE = 1 5 0 0 V rms . U.L RECOGNIZED : E81734 DESCRIPTION The T1220/1230W triacs use high performance

XXXW

Contextual Info: 1220W T1230W SGS-THOMSON MûœËŒOTtsMK SNUBBERLESS TRIAC FEATURES • It r m s = 12 A ■ V drm = V rrm = 400V to 700V . EXCELLENT SWITCHING PERFORMANCES ■ INSULATING VOLTAGE = 1500V rms . U.L. RECOGNIZED : E81734 DESCRIPTION The T1220/1230W triacs use high performance

NPT1012

Abstract: NPT1012B AC200BM-F2 AC200B
Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in

RHGX

Abstract: 4 change over relays RHGS
Contextual Info: Permissible power Iosses of relaying equipment in cases type RHGX ~nd cubicle VSH 200 RHGX and cubicle Page Issued J Changed Data Ambient temperature Maximum permissible am bient temperature for relays OuTrelays are designed r a maximumambient temperature of +55 o at 110% of rated