123OC Search Results

bridge diode 60a

Abstract: DT 94 3TA60GK03NB 3TA60GK04NB half bridge 1A HALF WAVE BRIDGE
Contextual Info: 3TA60GKxxNB Three Phase Half Bridge Dimensions in mm 1mm = 0.0394" Type 3TA60GK03NB 3TA60GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=123oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive

Contextual Info: FFP15S60S 15 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

ic 9022

Abstract: MLX90223ESO
Contextual Info: MLX90223 Two Wire Switch# Features and Benefits # \ U D LQ LO P H U 3 Two wire operation CMOS for optimum stability, quality and cost New miniature package / thin, high reliability package Operation down to 3.5V Applications Automotive reed switch replacement

FFP15S60STU

Contextual Info: FFP15S60S tm 15A, 600V, STEALTH II Diode Features • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: Ultrafast Rectifier FFD20UP20S tm Features Applications • Ultrafast with soft recovery, trr <45ns • Power switching circuits • Reverse Voltage, VRRM=200V • Output rectifiers • Forward Voltage < 1.05V @ TC =100oC • Freewheeling diodes • RoHS compliant

F15S60S

Abstract: FFP15S60S FFP15S60STU
Contextual Info: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: GE Datasheet EHHD036A0F HAMMERHEAD* Series; DC-DC Converter Power Modules 18-75Vdc Input; 3.3Vdc, 36A, 120W Output Features Applications • Compliant to RoHS II EU “Directive 2011/65/EU” • Compliant to REACH Directive EC No 1907/2006  Flat and high efficiency curve

marking 23ab

Abstract: eftec 6300H marking Z1 sot mlx 220 eme sot23
Contextual Info: 0/;<3556# 7ZR#:LUH#6ZLWFK# HDWXUHV#DQG#%HQHILWV# • ■ ■ ■ # \ U D LQ LO P H U 3 Two Wire operation CMOS for Optimum Stability, Quality and Cost New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V # $SSOLFDWLRQV# ■ ■ ■

EVK011A0B

Contextual Info: GE Data Sheet EVK011A0B Series Eighth-Brick DC-DC Converter Power Modules 36–60Vdc Input; 12.0Vdc Output; 11A Output Current RoHS Compliant Features • Compliant to RoHS II EU “Directive 2011/65/EU” • Compliant to REACH Directive (EC) No 1907/2006

F20UP20S

Abstract: FFD20UP20S F20UP
Contextual Info: Ultrafast Rectifier FFD20UP20S tm Features Applications • Ultrafast with soft recovery, trr <45ns • Power switching circuits • Reverse Voltage, VRRM=200V • Output rectifiers • Forward Voltage < 1.05V @ TC =100oC • Freewheeling diodes • Switching mode power supply

Contextual Info: FFP15S60S tm 15 A, 600 V, STEALTH II Diode Features • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power

FFD20UP20S

Contextual Info: FFD20UP20S tm 20A, 200V, Ultrafast Diode Features • Ultrafast Recovery, Trr = 45 ns @ IF = 20 A • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFD20UP20S is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use

Eftec

Abstract: Eftec ra 310 SUMITOMO EME G
Contextual Info: MLX90223 Two Wire Switch# Features and Benefits • ■ ■ ■ # \ U D LQ LO P H U 3 Two wire operation CMOS for optimum stability, quality and cost New miniature package / thin, high reliability package Operation down to 3.5V Applications ■ ■ ■ Automotive reed switch replacement

Contextual Info: FFD20UP20S tm 20 A, 200 V, Ultrafast Diode Features • Ultrafast Recovery, Trr = 45 ns @ IF = 20 A • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFD20UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and

Contextual Info: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

HX8347-G

Contextual Info: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver