128X8 Search Results

24C02 sot

Abstract: 24c02 wp reset CAT24AA02TDI-GT3 CAT24AA02TDI-GT3 marking
Contextual Info: CAT24AA01, CAT24AA02 1-Kb and 2-Kb I2C CMOS Serial EEPROM Description The CAT24AA01/24AA02 are 1−Kb and 2−Kb CMOS Serial EEPROM devices internally organized as 128x8/256x8 bits. They feature a 16−byte page write buffer and support the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocols.

128x80

Abstract: oled flexible screen Parallel Interfaces oled display ic OLED display circuit MXED301 7333 regulator Unidux
Contextual Info: f rie W E B N ct u od r P For Passive-Matrix OrganicLight-Emitting-Diode OLED Displays   Gray-Scale Monochrome MXED301 Clare Micronix MXED301 128 Column by 80 Row OLED Gray-Scale Driver with Controller Small-Molecule and Polymer FEATURES • Drives up to 128x80 PassiveMatrix OLED Displays

APC UPS CIRCUIT DIAGRAM

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM MAB8051 MAB8051AH-2 p MAF80A51AH-2 P25AD APC UPS repair UPS APC APC UPS CIRCUIT BOARD
Contextual Info: MAB8031AH-2 MAB8051AH-2 PO. 0 - PO. 7 lllllll IllH W April 1989 PORT 0 PO RT 2 D R IVER S D R IV E R S iE IE RAM ! = i > ¥ "T T 128x8 I ROM PORT 2 LATCH PORT 0 LATCH £ 4K x 8 $ 3E 3E STACK POINTER PHILIPS PROGRAM ADDRESS REGISTER JL _SZ_ v_ <^=n v y PCON

intel 8052

Abstract: IC89C52 80C52 IC89C52A
Contextual Info: IC89C52 51 A CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8(4)-Kbytes of FLASH FEATURES GENERAL DESCRIPTION • 80C52(51) based architecture • 8(4)-Kbytes Flash memory with fast-pulse programming algorithm and software protection • 256 x 8 RAM (128x8 RAM)

T93C46A

Contextual Info: SGS-THOMSON ST93C46A M 1 KBITS 64x16 or 128x8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIMINARY DATA HIG HLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 M ILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 64 X 16 OR 128 X 8 M EMORY FORMAT USER

Contextual Info: U B I Preliminary Information X24C01 1K 128x8 Bit Serial E2PROM FEATURES DESCRIPTION * 3V to 5.5V Power Supply * Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 pA * Internally Organized 128 x 8 * 2 Wire Serial Interface —Bidirectional Data Transfer Protocol

CAT25010

Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25010/20/40 are 1-Kb/2-Kb/4-Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16-byte page

ST24LC21B

Abstract: ST24FC21 ST24FW21 ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FW21 DUAL MODE SERIAL 1K 128x8 EEPROM 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21) TTL SCHMITT-TRIGGER on VCLK INPUT 100k / 400k Hz COMPATIBILITY with the I2C

marking S1T

Abstract: 25040e
Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAT25010/20/40 are 1−Kb/2−Kb/4−Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial

Contextual Info: /T T *7 # . S G S -T H O M S O N S T 2 4 L C 2 1 B , S T 24L W 21 Ifflfflm iig lM s M Ig g S T 2 4 F C 2 1 , ST24FW 21 DUAL MODE SERIAL 1K 128x8 EEPROM • ■ ■ ■ 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V SINGLE SUPPLY VOLTAGE

25010 eeprom

Abstract: 25040 948AL CAT25010 CAT25020 CAT25040 MD-1006
Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAT25010/20/40 are 1−Kb/2−Kb/4−Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial

x2001

Abstract: xicor x2001 RR-504
Contextual Info: X2001 X2001I Commercial Industrial 1K 128x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2001 features the JEDEC approved pinout for byte-wide memories, com­

Contextual Info: E4E D XICOR INC • 1^1743 im ADVANCED INFORMATION Commercial Industrial 1K 0 0 0 E 2 fl4 E ■ X24LC01 X24LC01I 128x8 Bit Electrically Erasable PROM 13-21 TYPICAL FEATURES • 3V-6V Vcc Operation • Low Power CMOS —2 mA Active Current Typical —60 jliA Standby Current Typical

1010XXX

Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FW21 DUAL MODE SERIAL 1K 128x8 EEPROM 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21) TTL SCHMITT-TRIGGER on VCLK INPUT 100k / 400k Hz COMPATIBILITY with the I2C

Contextual Info: DENSE-PAC MICROSYSTEMS 1 Megabit CM OS SRAM DPS128M8n3/DPS 128X8A3 DESCRIPTION: The DPS128M8nY & DPS 128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,

Contextual Info: AT59C11/22/13 Features • Low Voltage and Standard Voltage Operation 5.0 V Vcc = 4.5 V to 5.5 V 3.0 V (Vcc = 2.7 V to 5.5 V) 2.5 V (Vcc = 2.5 V to 5.5 V) 2.0 V (Vcc = 1.8 V to 5.5 V) User Selectable Internal Organization 1K: 128x8 or 64x16 2K: 256x8 or 128x16

Contextual Info: •> GOULD AHCI Semiconductors S6810/S68A10/S68B10 128x8 STATIC READ/WRITE MEMORY Features General Description □ Organized as 128 Bytes of 8 Bits □ Static Operation The S6810/S68A10 and S68B10 are static 128x8 Read/Write Memories designed and organized to be

xicor x2001

Abstract: X2001
Contextual Info: Commercial Industrial 1K mm X2001 X2001I 128x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V program m a­ ble nonvolatile memories. The X2001 features the JEDEC approved pinout for byte-wide memories, com ­

24C02 wp st

Abstract: CAT24AA02TDI MARK 24c02 wp reset 24c02 wp AEC-Q100 CAT24AA01 CAT24AA02 MO-193 24C02 catalyst
Contextual Info: CAT24AA01, CAT24AA02 1-Kb and 2-Kb I2C CMOS Serial EEPROM DESCRIPTION FEATURES 2 The CAT24AA01/24AA02 are 1-Kb and 2-Kb CMOS Serial EEPROM devices internally organized as 128x8/256x8 bits. „ Supports Standard and Fast I C Protocol „ 1.7 V to 5.5 V Supply Voltage Range

25040L

Abstract: 25040 25040VI 25010V
Contextual Info: CAT25010, CAT25020, CAT25040 1K/2K/4K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25010/20/40 is a 1K/2K/4K Bit SPI Serial CMOS EEPROM internally organized as 128x8/256x8/ 512x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The

Contextual Info: 240PIN DDR2 800 ECC Unbuffered DIMM 1024MB With 128x8 CL6 TS128MLQ72V8U Description Placement The TS128MLQ72V8U is a 128M x 72bits DDR2-800 Unbuffered DIMM. The TS128MLQ72V8U consists of 9 pcs 128Mx8 bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

48-PIN

Abstract: 50-PIN tl71 operational 128X8A3
Contextual Info: 1 Megabit CMOS SRAM D E N S E - P A C M I C R O S Y S T E M DPS 128M8n3/DPS 128X8A3 S DESCRIPTION: The D P S 1 2 8 M 8 n Y & D P S 128X 8A 3S R A M devicesarea revolutionary new mem ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless C hip Carriers SLCC . Available in straight leaded,

948AL

Abstract: CAT25010 CAT25020 CAT25040 MD-1006 25040VI 25010 eeprom
Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAT25010/20/40 are 1−Kb/2−Kb/4−Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial

Contextual Info: PENSE-PAC 1 Megabit CMOS SRAM DPS128M8n3/DPS 128X8 A3 MICROSYSTEMS DESCRIPTION: The DPS128M8nY & 128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,