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    128K X 8 Search Results

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    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-90-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TF28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-120-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    MR28F010-90/R Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    128K X 8 Price and Stock

    Displaytech Ltd 64128KX FC BW-3

    LCD Graphic Display Modules & Accessories 128X64 FSTN FPC Interface Wht Backlight
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    Mouser Electronics 64128KX FC BW-3 1,687
    • 1 $18.43
    • 10 $18.17
    • 100 $12.68
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    Vishay Precision Group Inc MAX128K00B

    Metal Foil Resistors - Through Hole MAX128K00B 5 PPM
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    Mouser Electronics MAX128K00B
    • 1 $19.94
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    • 100 $15.72
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    Bel Power Solutions 20IMX4-1212-8K

    Isolated DC/DC Converters - Through Hole POWER SUPPLY;DC-DC;IN 8.4to36V;OUT +12/-12V;0.17/0.17A;OPTION K;;;
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    Mouser Electronics 20IMX4-1212-8K
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    Cornell Dubilier Electronics Inc 128KXM050M

    Aluminum Electrolytic Capacitors - Radial Leaded 1200uF 50V 20% tol. ELECTROLYTIC
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    Cornell Dubilier Electronics Inc 128KXM035M

    Aluminum Electrolytic Capacitors - Radial Leaded 1200uF 35V 20% tol. ELECTROLYTIC
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    128K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    79LV0832

    Abstract: Maxwell 79lv0832
    Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)


    Original     		PDF 79LV0832 32-Bit) I/016-23 79LV0832 32-bit Maxwell 79lv0832

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    79LV0408

    Abstract: Maxwell 79lv0408
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408 Maxwell 79lv0408

    79LV0408

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408

    transistor comparison data sheet

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 transistor comparison data sheet

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 79C0408

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    9l reset

    Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 9l reset CY7C0852V-133AC

    TSOP 1376

    Abstract: MX27C2048 MX27C2100
    Text: Introduction Selection Guide MX27C2100/27C2048 2M-BIT 256K x 8/128K x 16 CMOS EPROM FEATURES • 128K x 16 organization(MX27C2048, JEDEC pin out) • 256K x 8 or 128K x 16 organization(MX27C2100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/90/120/150 ns


    Original     		PDF MX27C2100/27C2048 8/128K MX27C2048, MX27C2100, MX27C2048) MX27C2100/2048 MX27C2100) TSOP 1376 MX27C2048 MX27C2100

    L7C108WC25

    Abstract: MT5C1008 l7c109wi25
    Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    LP621024DM-70LLF

    Abstract: LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL
    Text: LP621024D Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D Series 128K X 8 BIT CMOS SRAM


    Original     		PDF LP621024D 32-pin LP621024DM-70LLF LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D-55LL LP621024D-70LL LP621024DM-55LL

    DP3S128X32Y5

    Abstract: No abstract text available
    Text: 4 Megabit 3.3 Volt High Speed SRAM DP3S128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DP3S128X32Y5 is the 128K x 32 SRAM module the utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 128K x 8 SRAM’s that are configured as 128K x 32.


    Original     		PDF DP3S128X32Y5 DP3S128X32Y5 I/O31 500mV 30A236-04

    CY7C09289V

    Abstract: CY7C09369V CY7C09379V A12R-A11R
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0850V/CY7C0851V CY7C0852V/CY7C0853V FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM Features Functional Description


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0850V/CY7C0851V CY7C0852V/CY7C0853V A12R-A11R

    LP621024D-70LLTF

    Abstract: LP621024D-55LLT LP621024D-70LLT LP621024DM-55LLT LP621024DM-T LP621024D-T
    Text: LP621024D-T Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D-T Series 128K X 8 BIT CMOS SRAM


    Original     		PDF LP621024D-T 32-pin LP621024D-70LLTF LP621024D-55LLT LP621024D-70LLT LP621024DM-55LLT LP621024DM-T

    A67L73361

    Abstract: A67L83181
    Text: A67L83181/A67L73361 Preliminary 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 8, 2005 Preliminary


    Original     		PDF A67L83181/A67L73361 A67L73361 A67L83181

    Untitled

    Abstract: No abstract text available
    Text: AK632128W/AK632128Z 128K x 32 SRAM MODULE ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK632128 high density memory module is a static random access memory organized in 128K x 32 bit words. The assembly consists of four high speed 128K x 8 SRAMs in surface


    OCR Scan     		PDF AK632128W/AK632128Z AK632128 64-Pin 0107b47

    Untitled

    Abstract: No abstract text available
    Text: □PM DPE41288 Dense-Pac Microsystems. Inc. 128K X 8 CMOS EEPROM MODULE O DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read O nly Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.


    OCR Scan     		PDF DPE41288 DPE41288 64-Bytes 500mV 30a01

    Untitled

    Abstract: No abstract text available
    Text: D P E 4 1 2 8 8 128K X 8 CMOS EEPROM MODULE DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.


    OCR Scan     		PDF DPE41288 64-Bytes 500mV 30A01M3

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high­


    OCR Scan     		PDF 1024K-bit -15mA 64-pin, IDT49C802 IDT49C802

    Untitled

    Abstract: No abstract text available
    Text: □PM DPZ128X32V Dense-Pac Microsystems, Inc. 128K X 32 FLASH Memory VERSAPAC O P R E L IM IN A R Y DESCRIPTION: The DPZ128X32V is a 128K x 32 FLASH electrically erasable and programmable read only memory module built with four 128K x 8 FLASH memory devices. The module is a 65-pin


    OCR Scan     		PDF DPZ128X32V DPZ128X32V 65-pin 32-pin 200ns 250ns

    TL 1838

    Abstract: No abstract text available
    Text: 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module The CYM1838 is a very high perform ance 4-megabit static R A M m odule organized as 128K words by 32 bits. T he m odule is constructed using four 128K x 8 static


    OCR Scan     		PDF CYM1838 66-pin, 1838H 66-Pin TL 1838

    0436A8

    Abstract: No abstract text available
    Text: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF 85Volt IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA GA14-4662-00 0436A8