128KX4 Search Results

Contextual Info: WS128K48V-XG4WX 128Kx48 3.3V SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version ■ Access Times 15, 17, 20, 25ns ■ Packaging ■ TTL Compatible Inputs and Outputs • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ Weight

WS128K48-XG4WX

Contextual Info: WS128K48-XG4WX 128Kx48 SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version ■ Access Times 17, 20, 25, 35ns ■ Packaging: • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs ■ Weight

Contextual Info: ca WHITE ^MICROELECTRONICS 128Kx48 SRAM MODULE WS128K48-XG4WX ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs ■ Commercial, Industrial and Military Temperature Ranges

Contextual Info: a WHITE /M IC R O E L E C T R O N IC S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 1 5 , 1 7 , 2 0 , 25 n s ■ Pa ckaging 2 V Data Retention D e vice s A vailab le ■ TTL C om patible Inputs and Outputs Low Pow er Version

Contextual Info: ^EDI EDI8F44128C B a c i r o n l c D « l g n i In c . ' Secondary Cache Memory Array Module 128Kx44 High Speed CMOS Secondary Cache SRAM Module to Support the R4000 CPU The EDI8F44128C is a single array multichip Static RAM module organized as a 128Kx44 bits. It contains six 6

Contextual Info: M/HITE /MICROELECTRONICS 128Kx48 3.3V SRAM MODULE WS128K48V-XG4WX ADVANCED* FEATURES • 2V Data R etention D evices A v a ila b le ■ A c c e s s T im e s 15, 17, 20, 25ns Lo w Pow er V ersion ■ Packaging ■ T T L Com patible Inputs and Outputs • 116 Lead, 40.0m m H erm etic CQFP (Packag e 504)

Contextual Info: M/HITE / M I C R O E L E C T R O N I C S m 128Kx48 SRAM MODULE WS128K48-XG4WX A D V A N C ED * FEATURES • 2V D ata R etention D evices A va ila b le • 116 Lead, 40.0m m H erm etic CQFP Package 504 ■ TTL C om p atible Inputs and O utputs ■ C om m ercial, In d u s tria l and M ilita ry Tem pe ratu re Ranges

Contextual Info: a WHITE /MICROELECTRONICS 128Kx48 3.3V SRAM MODULE W S128K48V-XG4WX ADVANCED* FEATURES • 2V Data Retention D evices A v a ila b le ■ A c c e s s T im e s 1 5 ,1 7 , 20, 25ns Lo w P ow er V ersion ■ Packaging ■ T T L Com patible Inputs and Outputs

EDI8F44128C

Contextual Info: ^EDI EDI8F44128C Etoctionic DMigra Inc. 1 Secondary Cache Memory Array Module 128Kx44 High Speed CMOS Secondary Cache SRAM Module to Support the R4000 CPU The EDI8F44128C is a single array multichip Static RAM module organized as a 128Kx44 bits. It contains six 6

Contextual Info: VZÀ WHITE M I C R O E L E C T R O N I C S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • ■ A c c e s s Tim es 1 5 ,1 7 , 20, 2 5 n s ■ 2V D ata Retention D e vice s A va ilab le Low Po w e r Version Pa ckaging • 116 Lead, 40.0m m Herm etic CQFP (Package 504)

Voice Record Integrated Circuits

Abstract: VOICE RECORDER IC voice recording chip VOICE RECORDER circuits team 20 voice record
Contextual Info: GPCR20A SINGLE-CHIP VOICE RECORD/PLAYBACK DEVICES 1. GENERAL DESCRIPTION 2. FEATURES GPCR20A is a highly integrated circuit that contains all of the „ Nature, high-quality playback suitable for voice, music, and necessary functions for providing high quality voice recording and

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Contextual Info: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

IS61WV1288EEBLL

Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

60MHZ

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization

Contextual Info: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

256kx32

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Contextual Info: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

3 phase automatic phase changer

Abstract: automatic phase changer analog input output circuit diagram of car central lock system FM Stereo FM PLL MODULATOR loudness,bass,treble parametric equalizer ic A354 TDA7500 TDA7501
Contextual Info: TDA7500 DIGITAL AM/FM SIGNAL PROCESSOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FULL SOFTWARE FLEXIBILITY WITH TWO 24X24 BIT DSP CORES SOFTWARE AM/FM, AUDIO AND SOUNDPROCESSING HARDWARE RDS FILTER, DEMODULATOR & DECODER INTEGRATED CODEC 4ADCs, 6DACs

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

circuit diagram 0-10V industrial interface

Abstract: 0-5 v to 4-20 ma converter
Contextual Info: ANALOG DEVICES □ FEATURES W idelnputR ange: 0 -1 V to 0 -1 0 V High C M V Isolation: 1500V rms Programmable O utput Ranges: 4m A to 20mA Oto 20mA Load Resistance Range: 0 to 1.3 5 k fl max High Accuracy Low Offset Tempco: ± 300nA/°C Low Gain Tempco: ± 50ppm/°C