128KXL6 Search Results

Contextual Info: O K I Semiconductor MSM532000B 131,072-Word x 16-Bit Mask ROM DESCRIPTION The OKI MSM532000B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532000B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

Contextual Info: AS7C1026 AS7C31026 X 5V/3.3V 64Kx 16 CMOS SRAM Features • Organization: 65,536 words x 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 5 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 770 mW max 20 ns cycle, 5V

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

Contextual Info: AS7C4098 AS7C34098 5Y/3.3Y 256Kxl6 CMOS SRAM Features • Organization: 262,144 words x 16 bits • Available in 3.3Y AS7C34098 and 5Y (AS7C34098) versions • High speed - 10/12/15/20/25 ns address access time - 4/4/5/5/6/7 ns output enable access time

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: IMITE /MICROELECTRONICS a 5V FLASH MODULE WF128K16, WF256K16-XCX5 PRELIM INARY * FEATURES • Access Times of 60, 70, 90 and 150nS ■ 5 V o lt Program m ing; 5V ±10% Supply ■ 40 pin Ceramic DIP Package 303 ■ Low Pow er CM OS ■ Organized as 128K x 16 and 256K x 16