128MB_ Search Results
128MB_ Price and Stock
Cypress Semiconductor MB95F128MBPF-G-JNE1NO WARRANTY |
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MB95F128MBPF-G-JNE1 | Bulk | 695 | 1 |
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Cypress Semiconductor MB95F128MBPF-G-N9E1NO WARRANTY |
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MB95F128MBPF-G-N9E1 | Tray | 310 | 1 |
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Kingston Technology Company KSM64R52BD4-128MBMODULE DDR5 SDRAM 128GB 288RDIMM |
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KSM64R52BD4-128MB | Tray | 5 | 1 |
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KSM64R52BD4-128MB | 5 |
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Amphenol ProLabs CF-128MB-CJEDEC Standard 128MB 68-pin Comp |
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CF-128MB-C |
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Infineon Technologies AG MB95F128MBPF-G-JNE1IC MCU 8BIT 60KB FLASH 100QFP |
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128MB_ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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128MbRDRAMs | Rambus | Rambus SO-RIMM Module (with 64Mb RDRAMs) | Original |
128MB_ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
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conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys | |
micron lpddr
Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
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128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged | |
s11 stopping compound
Abstract: DEF01
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128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01 | |
cr1 5 p26zContextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ |
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128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z | |
09005aef8091e66d
Abstract: MT48LC16M8A2BB
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB | |
Contextual Info: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR) |
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128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce | |
MT48LC16M8A2BBContextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free |
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 54-pin 60-ball 54-ball MT48LC16M8A2BB | |
Contextual Info: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR) |
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128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9 | |
Contextual Info: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be |
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128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 | |
MT48LC4M32B2P
Abstract: marking 6a2 smd 6A 1176
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P marking 6a2 smd 6A 1176 | |
elpida lpddr2
Abstract: Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2
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128Mb: MT46H8M16LF MT46H4M32LF 60-ball 90-ball 09005aef8331b3e9 elpida lpddr2 Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2 | |
micron vccp
Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
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TN-45-13: 09005aef8201fbdc TN4513 09005aef8201fb90/Source: micron vccp TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816 | |
MT48LC16M8A2BBContextual Info: 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive |
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC16M8A2BB | |
MT48LC16M8A2BBContextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive |
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB | |
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Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ |
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128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 | |
mt46Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V |
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128Mb: MT46H8M16LF 09005aef822b7e27/Source: 09005aef822b7dd6 mt46 | |
MT48LC8M16A2B4
Abstract: MT48LC16M8A2BB PC133 registered reference design
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC8M16A2B4 MT48LC16M8A2BB PC133 registered reference design | |
MT48LC16M8A2BBContextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free |
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB | |
Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive |
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128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 09005aef832ff1ac | |
Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ |
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MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 | |
micron marking MT48LC8M16A2B4
Abstract: MT48LC16M8A2BB
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d micron marking MT48LC8M16A2B4 MT48LC16M8A2BB | |
MT45W8MW16BGX-7013LWT
Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
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128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX | |
8M16
Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
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128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48 | |
MT48LC16M8A2BBContextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive |
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128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB |