1299 MOSFET Search Results

dc to dc buck converter 200A

Abstract: push-pull converter 80V output C1206223K5RAC SLF12575-100M5R4 PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES CMPD2838-NSA 1299 mosfet SM76925 current fed push pull topology C2012X7R1H104K
Contextual Info: National Semiconductor Application Note 1299 Grant Smith March 2004 Introduction by a push-pull isolation stage that also provides voltage reduction in the transformer. The buck stage is synchronous, the upper and lower Mosfets are both N-channel, which are

Contextual Info: User's Guide SNVA074A – May 2004 – Revised May 2013 AN-1299 LM5041 Evaluation Board 1 Introduction The LM5041 evaluation board is designed to provide the design engineer with a fully functional current fed push-pull power converter to evaluate the LM5041 controller, and also the LM5101 buck stage gate driver,

WPC8763L

Abstract: ATI M64-M QUANTA GD1 C3157 PCI8402 SAMSUNG GDDR3 quanta Neo c480 l3007 cps psi 100u 1p0
Contextual Info: 1 2 3 4 5 1 CPU MEROM GD1 Block Diagram 478 PIN micro FC-PGA P3,4 14.318MHz A A FSB 667 MHz(166X4) FSB 800 MHz(200X4) CLOCK GEN SVideo Out S-Video 32MVRAM 32bits P34 P10 S-Video LCD LVDS P7 CRT R/G/B 32bits P10 ICS9LPR363 P2 P11 LVDS 1299 Ball (micro FCBGA)

APT50M80JLC

Contextual Info: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

ed 77A DIODE

Abstract: APT50M50JLC 77A DIODE ed 77A
Contextual Info: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT10050JLC

Contextual Info: APT10050JLC 1000V POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

Contextual Info: APT10025JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is

Contextual Info: APT10050JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is

Contextual Info: APT5010JFLC 500V POWER MOS VITM 44A 0.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

APT50M80

Abstract: APT50M80B2LC APT50M80LLC
Contextual Info: APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: APT50M50JFLC 500V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is

Contextual Info: APT5010B2FLC APT5010LFLC 500V 47A 0.100W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

050590

Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
Contextual Info: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5010JLC

Contextual Info: APT5010JLC 44A 0.100 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

050590

Abstract: APT10040B2VR APT10040LVR
Contextual Info: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M80JFLC 500V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is

Contextual Info: APT50M80B2FLC APT50M80LFLC 500V 58A 0.080W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

APT10050L

Contextual Info: APT10050B2FLC APT10050LFLC 1000V 21A 0.500W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

amp mosfet schematic circuit

Abstract: schematic bluetooth headset 10mhz mosfet HP-3310A 100MHz high-frequency generator sweep generator mosfet amp ic bluetooth antenna AN1299 bluetooth headset
Contextual Info: Measuring RF Interference in Audio Circuits Application Note March 28, 2007 AN1299.0 Introduction Test Results The proliferation of wireless transceivers in portable applications has led to increased attention to an electronic circuits’ ability to operate in the vicinity of high frequency

Si7453DP

Abstract: 1299 mosfet
Contextual Info: SPICE Device Model Si7453DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

XP131A1520SR

Contextual Info: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.02Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP131A1520SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching

Marquardt 1298

Abstract: marquardt power switch 2701 2709.5101 Marquardt Switches 2504 2504.0301 Marquardt 1299 Marquardt Switches 1298 1267.7121 marquardt power switch 2709 2602
Contextual Info: POWER TOOL SWITCHES VARIETY. QUALITY. INNOVATION POWER TOOL SWITCHES BY MARQUARDT THE PROGRAM This catalog covers our wide range of power tool switches. The standard versions are listed with their part numbers. Sample switches and installation drawings with tolerance specifications are available

Si7453DP

Abstract: si7453
Contextual Info: SPICE Device Model Si7453DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range