12J1721 Search Results

5SMY 12J1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

5SMY 12J1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-02 11 05 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-03 04 14 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

5SYA 2033 document

Abstract: Ultra fast diode FAST RECOVERY DIODE 5SLY
Contextual Info: Data Sheet, Doc. No. 5SYA 1690-01 12 01 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage