12JAN2012 Search Results

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION B3 B4 B5 C DWN DATE Printing New HF3 46E ECR-12-003906, New HF3 43I S REVISED PER ECO-13-009645 HD BK AK AK UKo UKo UKo UKo 09JUL2010 12JAN2012 29FEB2012 18JUN2013 APVD Mark 1)

SLUP100

Abstract: texas instruments of ic 74 ls 83 M-018
Contextual Info: CSD87351Q5D SLPS287D – MARCH 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD87351Q5D NexFET™ power block is an optimized design for synchronous buck applications

TAS5611A

Abstract: TAs56 TAS5611APHD 2502W
Contextual Info: TAS5611A SLAS709B – JUNE 2010 – REVISED JULY 2011 www.ti.com 125W STEREO/250W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5611A FEATURES APPLICATIONS • • • • • • 23 • • • • • • • • PurePath™ HD Enabled Integrated Feedback

Contextual Info: DAC5662-EP www.ti.com SGLS340A – JUNE 2006 – REVISED OCTOBER 2006 DUAL 12-BIT 200-MSPS DIGITAL-TO-ANALOG CONVERTER FEATURES • • • • • • • • 1 Controlled Baseline – One Assembly – One Test Site – One Fabrication Site Extended Temperature Performance of

LM293-EP

Abstract: LM393APWR
Contextual Info: LM193, LM293, LM293A LM393, LM393A, LM2903, LM2903V DUAL DIFFERENTIAL COMPARATORS SLCS005W − JUNE 1976 − REVISED JULY 2010 D D D D D D D D − Max Rating . . . 2 V to 36 V − Tested to 30 V . . . Non-V Devices − Tested to 32 V . . . V-Suffix Devices

Contextual Info: TPS797xx www.ti.com SLVS332G – MARCH 2001 – REVISED NOVEMBER 2009 Ultra-Low IQ, 50mA LDO Linear Regulators with Power Good Output in SC70 Package FEATURES DESCRIPTION • • • • • • The TPS797xx family of low-dropout LDO voltage regulators offers the benefits of low-dropout voltage

Contextual Info: TPS2062C, TPS2066C TPS2060C, TPS2064C TPS2002C, TPS2003C SLVSAX6 – OCTOBER 2011 www.ti.com Dual Channel, Current-Limited, Power-Distribution Switches Check for Samples: TPS2062C, TPS2066C, TPS2060C, TPS2064C, TPS2002C, TPS2003C FEATURES 1 • • • •

STGW60

Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
Contextual Info: STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package

TAS1020A

Contextual Info: TAS1020A USB Streaming Controller Data Manual December 2001 Digital Audio Products SLES003A Contents Section 1 2 Title Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: TAS5611A SLAS709B – JUNE 2010 – REVISED JULY 2011 www.ti.com 125W STEREO/250W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5611A FEATURES APPLICATIONS • • • • • • 23 • • • • • • • • PurePath™ HD Enabled Integrated Feedback

Contextual Info: TAS5611 www.ti.com SLAS681A – DECEMBER 2009 – REVISED APRIL 2010 125W STEREO / 250W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5611 FEATURES APPLICATIONS • • • • • • 23 • • • • • • • • PurePath™ HD Enabled Integrated Feedback

Contextual Info: TLV705 TLV705P SBVS151B – DECEMBER 2010 – REVISED DECEMBER 2011 www.ti.com 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA

subwoofer power amplifier circuit diagram

Contextual Info: TAS5611A SLAS709B – JUNE 2010 – REVISED JULY 2011 www.ti.com 125W STEREO/250W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5611A FEATURES APPLICATIONS • • • • • • 23 • • • • • • • • PurePath™ HD Enabled Integrated Feedback

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

T015

Contextual Info: ADS5463-SP www.ti.com. SGLS378B – MARCH 2008 – REVISED OCTOBER 2009 CLASS V, 12-BIT, 500-MSPS ANALOG-TO-DIGITAL CONVERTER

Contextual Info: LD29080 800 mA fixed and adjustable output very low drop voltage regulator Datasheet - production data • Fixed and adjustable output voltage ± 1 % at 25 °C • Internal current and thermal limit • Logic controlled electronic shutdown PPAK Description

Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: TPS53219 www.ti.com SLUSAA8 – NOVEMBER 2010 Wide Input Voltage, Eco-mode , Single Synchronous Step-Down Controller Check for Samples: TPS53219 FEATURES APPLICATIONS • • • • • • • 1 2 • • • • • • • • • • • Wide Input Voltage Range: 4.5 V to 28 V

Contextual Info: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

FERRITE TOROIDAL CORE DATA

Abstract: 200 pF air variable capacitor
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

GW50H60DF

Abstract: GW50
Contextual Info: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode

Contextual Info: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

Contextual Info: MBT2907ADW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 2 4 3 6 5 SOT-363 SC-88 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value

CC1101IRHBRG4Q1

Abstract: 58khz schematic
Contextual Info: CC11x1-Q1 www.ti.com SWRS076B – 11-07-22-013 - APRIL 2009 – REVISED APRIL 2010 Low-Power Sub-1-GHz Fractional-N UHF Device Family for Automotive 1 Introduction 1.1 Features 12 • Qualification in Accordance With AEC-Q100 Grade 1 • Extended Temperature Range Up To 125°C