12L2510 Search Results

dt 92 abb

Abstract: 5SMX12L2510
Contextual Info: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

Contextual Info: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 July 04 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

IGBT abb

Abstract: 5SLX12L2510 a7050 V15C
Contextual Info: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-02 Feb 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

abb traction motor

Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the