12N90 Search Results

10N90

Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient

Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient

12n90c

Abstract: 125OC
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C

Contextual Info: HiPerFASTTM IGBT Lightspeed TM Series Symbol Test Conditions IXGH 12N90C Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C

Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 900 V VCGR T J = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

L1047

Abstract: 12N90Q D1488
Contextual Info: IZIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 D DS on = 900 V = 12 A = 0.9 Q t rr < 200 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V DSS Td = 25°C to 150°C

12n90

Abstract: 10N90 4048-A
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 10N90 12N90 10 12

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

OV 780

Contextual Info: V • » = V = CES sat ^fi(typ) Symbol Test Conditions = CES “ 9 0 0 V 2 4 A V ■ IXGH 12N90C o HiPerFAST IGBT Lightspeed™ Series CO Advanced Technical Information 7 0 n s TO-247 T, = 25°C to 150°C 900 V T J, = 25° C to 150° C;’ ROb„ = 1 Mß

Contextual Info: OIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q VDSS IXFT 12N90Q I D25 ^ D S o n N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 900 V = = 12 A 0 .9 Q trr < 200 ns P relim inary d a ta sh e e t Symbol Test Conditions Maximum Ratings

Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

12N90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

640 hc v3

Abstract: 12N90
Contextual Info: lOIXYS HiPerFET Power MOSFETs IXFH /IXFM 10N90 IXFH /IXFM 12N90 IXFH 13N90 p V DSS ^D25 900 V 900 V 900 V 10 A 12 A 13 A DS on 1.1 Q 0.9 £2 0.8 Q t„rr <250 ns High dv/dt, Low trr, HDMOS™ Family OS Symbol Test Conditions V vDGR Tj =25°Cto150°C Tj =25°Cto150°C;RGS= 1 Mi2

12n90q

Abstract: PLUS247
Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 Ω trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 900 V 900 V 900 V 10 A 12 A 13 A 1.1 Ω 0.9 Ω 0.8 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol Test Conditions