12E SOT Search Results

GR-1400

Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 TECHNICAL OVERVIEW LINE SIDE Serial LIU Clocks The PHAST-12E is a highly integrated SONET/SDH terminator device designed for ATM cell, frame, higher order multiplexing,

SFH 903

Abstract: 386d lcd power board schematic APS 252 H103A TCS 3414 SFH 291 386D pin configuration C5011-11 4312-020-36643 PAL 010a
Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DATA SHEET LINE SIDE Serial LIU Clocks The PHAST-12E is a highly integrated SONET/SDH terminator device designed for ATM cell, frame, higher order multiplexing,

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

marking 54 sot23

Abstract: ZC2812
Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L

GR-1400

Abstract: GR-496-CORE GR-1400-CORE g803 GR-1400-CORE 1994
Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DESCRIPTION • Supports simultaneous termination of ATM, POS, and TDM Time Division Multiplexed, e.g., VT1.5, VC-4 etc. traffic

lcd power board schematic APS 254

Abstract: k 3869 AUN n SFH 903 2822 A03 H1339 SFH 3500 HT-234 tms 3848 nc
Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DESCRIPTION • Supports simultaneous termination of ATM, POS, and TDM Time Division Multiplexed, e.g., VT1.5, VC-4 etc. traffic

motorola g18 pin configration

Abstract: lcd power board schematic APS 254 lcd power board schematic APS 252 GR-1400 2c39 386D pin configuration TCS 3414 HT 12E APPLICATION aph3 4312 020 36643
Contextual Info: PHAST -12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DATA SHEET • Supports simultaneous termination of ATM, POS, and TDM Time Division Multiplexed, e.g., VT1.5, VC-4 etc. traffic

MV SOT23

Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Contextual Info: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E 12E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range

STM-16 LIU

Abstract: GR-1400 GR-1400-CORE
Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 TECHNICAL OVERVIEW PRODUCT PREVIEW • Supports simultaneous termination of ATM, POS, and TDM traffic • Integrated clock recovery and synthesis for four 155.52

SOT23R

Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Contextual Info: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM

MMBZ5227B 8B

Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc

MMBR2857

Abstract: sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857
Contextual Info: 12E D I b3fc,7aS4 DQÔ7EÛ1 3 | MOTOROLA SC MOTOROLA XSTRS/R F - - SEM ICONDUCTOR TECHNICAL DATA MMBR2857 The RF Line Ole Source Same as 2N2857 IMPN Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator

MMBR930

Abstract: pe sot-23
Contextual Info: T-3J-/? 12E D § b3h7aSM 0007270 3 | MOTORCLA SC MOTOROLA XSTRS/R F _ SEMICONDUCTOR TECHNICAL DATA MMBR930 The RF Line N P N Silicon High Frequency Transistor . designed for thick and thin-film circuits using surface mount compo­ nents and requiring low-noise, high-gain signal amplification at frequencies

EB011

Abstract: MMBC1654N5L
Contextual Info: MOTORCLA SC X ST R S/R F 12E D I t3b75SM 0005*152 MAXIMUM RATINGS Rating Cellseior-Emitter Voltegt CoXcdor-BaM Vottaga Emfttar-S«« Voltage CoHoctor Currant — Contlnuou* Symbol VCEO VCBO VEBO , }£ VahJ* i«o Unit Vde Vdc 110 &0 to •v<te mAdo Max 228

MMBA812

Abstract: MMBA812M5L MMBA812M5
Contextual Info: MOTORCLA SC XSTRS/R 12E M A X I M U M R A T IN G S Rating D | b3b?2S4 0005^47 - T - tf- o ? Sym bol Value Unit Collector-Emitter Voltage VcEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc ic

Contextual Info: 12E O I b3b?254 MOTGRCLA SC GDñ?57? J-'Sh I? 1 | XSTRS/R F MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBR920 The RF Line N P N Silicon High Frequency Transistor . designed for thick and thin-film circuits using surface m ount com po­ nents and requiring low-noise, high-gain signal amplification at frequencies

NEC D765

Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Contextual Info: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator

ref25z

Abstract: 12e sot
Contextual Info: PL ESS EY SEMICON DU CT OR S 12E o | 7250513 OOOfiSOa T | FLESSEY W S e m ic o n d u c to r s . •■ n. . T -S 8 -0 7 REF25/REF25Z 2.5V MICROPOWER PRECISION REFERENCES The REF25 and REF25Z are integrated circuits using the bandgap principle to provide a precise stable reference

BCW60AL

Abstract: BCW60BL BCW60CL BCW60DL MPS3904 sot-23 Marking KN
Contextual Info: 12E D I b3f ci 7254 OQflSÖTO ? | MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage Rating v CEO 32 V Collector-Base Voltage VCBO 32 V Emitter-Base Voltage Ve b o 5.0 V ic 100 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C Roja Pd 556 °C/W Collector Current — Continuous

MRF522

Abstract: SE317 318b MRFC521
Contextual Info: 12E D I MOTOROLA b3b7554 GGÖ7732 MOTOROLA SC T | XSTRS/R F SE M IC O N D U C T O R mmmmm—mmimmmmm TECHNICAL DATA MRF521 MRFC521 MRF522 MRF524 MRF5211,L The RF Line P N P Silicon High-Frequency Transistors . designed primarily for use in the high-gain, low-noise small-signal amplifiers for

REF25Z

Abstract: plessey capacitor plessey military REF25 5807
Contextual Info: PLESSEY SEMICONDUCTORS 12E A PLESSE Y S e m ic o n d u c to r s • m— o | 7 2 5 05 13 OOaaSOE T | ■»■ T-sa-07 REF25/REF25Z 2.5V MICROPOWER PRECISION REFERENCES The REF25 and REF252 are integrated circuits using the faandgap principle to provide a precise stable reference

bta 03

Abstract: BTA42L bta43
Contextual Info: M OT O R O L A SC 12E D I XSTRS/R F b3t?ES4 GGflS^? M A X I M U M R A T IN G S Symbol MM BTA42L M M BTA43L Unit Coliector-Emitter Voltage VCEO 300 200 Vdc Collector-Base Voltage VcBO 300 200 Vdc Emitter-Base Voltage Ve b o 6.0 Rating Collector Current — Continuous

BTA05

Contextual Info: MOTOROLA SC 12E 0 I XSTRS/R F M Á X I M U M R A T IN G S Sym bol MMBTA05L MMBTA06L Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage Veb o 4.0 Vdc *C 500 mAdc Rating Collector Current — Continuous - T - ó?7 -0 9

MPS3904

Abstract: BCW71L BCW72L
Contextual Info: MOTORCLA SC " 12E O I XSTRS/R F Sym bol Value Unit ' Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage Vc b o 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc ic 100 mAdc Sym bol M ax Unit PD 225 mW 1.8 mVW’C Rdja .556 °C/W Po “ 300 mW 2.4 m W /X Ra j a