12GHZ VCO Search Results

12GHZ VCO

Contextual Info: RFVC1800C RFVC1800C Connectorized Module Wideband MMIC VCO with Buffer Amp, 8 GHz to 12GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMP, 8GHz TO 12GHz Package: Module, 3-Connectors, 22.86mmx22.86mmx13.97mm Features      8GHz to 12GHz VCO

zd801

Abstract: 12GHZ VCO
Contextual Info: ZD80120 8~12GHz Broadband VCO Test report is for reference only. TEST REPORT for ZD80120 1 ZD80120 8~12GHz Broadband VCO Technical Specification Frequency Range GHz 8 ~ 12 Tuning Voltage(V) 0 ~ +25 Power Supply(V / mA) +15/300 Phase Noise @ 100KHz(dBc / Hz)

NBT-168

Abstract: NBT-168-D NBT-168-T1 35 micro-X ceramic Package
Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

Contextual Info: Preview MMS002AA DC-20GHz, 1.5dB Insertion Loss Absorptive SPDT Features • Low insertion loss, 1.0dB to 1.8dB typical from DC to 12GHz • High Isolation, 45dB to 60dB typical from DC to 12GHz • 1.35mm x 0.85mm x 0.1mm die size Isolation dB -10 -20 VCONTROL 0/-5V

Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

84-1LMI

Abstract: NBT-168 NBT-168-D NBT-168-T1 BO 336 choke flange
Contextual Info: NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

84-1LMI

Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

MLK0603

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant

Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT

rfmd micro-x gaas

Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT

Contextual Info: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The

MLK1005

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering

rfvc1800sq

Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8GHz to 12GHz Package: 4mmx4mmx1.1mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0 to +13V Vtune for frequency control. The

Contextual Info: NBT-168  0,&52:$9 *D,Q3*D$V ',6&5(7( +%7 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering

MLK1005

Abstract: MLK1005S82NJT MLK1005S12NJT MLK1005S2N7ST
Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering

Contextual Info: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK1005 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 100nH. • Provides high Q characteristics. • Advanced monolithic structure is formed using a multilayering

AS 031

Contextual Info: MAY 2 G 1992 TGS8630-SCC DC TO 12-GHz SPDT SWITCH D3628, SE P TEM B E R 1990 * On-Chip Driver Compatible With CMOS or Open-Collector TTL * Typical Insertion Loss . . . 2.3 dB at 12 GHz * High Isolation . . . 46 dB Through 12 GHz * Useable Bandwidth Through 18 GHz

Contextual Info: TGS8630-XCC DC TO 12-GHz SPDT SWITCH AP PR O VAL 5026 On-Chip Driver Compatible With CMOS or Open-Collector TTL Typical Insertion Loss . . . 2.3 dB at 12 GHz High Isolation . . . 46 dB Through 12 GHz Useable Bandwidth Through 18 GHz Size: 3,454 x 2,007 x 0,102 mm

Contextual Info: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.