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    12M1 Search Results

    12M1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD70F3612M1GBA1-GAH-AX Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    UPD70F3612M1GBA-GAH-AX Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    UPD70F3612M1GBA2-GAH-AX Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    RJE4E18812M1 Amphenol Communications Solutions Modular Jacks, Input Output Connectors, 8P8C, With Shield, With LEDs. Visit Amphenol Communications Solutions
    RJE7118812M1 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs. Visit Amphenol Communications Solutions
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    12M1 Price and Stock

    TDK Corporation MLZ2012M100HTD25

    FIXED IND 10UH 300MA 680MOHM SMD
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    DigiKey MLZ2012M100HTD25 Cut Tape 18,401 1
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    MLZ2012M100HTD25 Digi-Reel 18,401 1
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    MLZ2012M100HTD25 Reel 18,000 2,000
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    Newark MLZ2012M100HTD25 Cut Tape 1,400 5
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    TTI MLZ2012M100HTD25 Reel 18,000 2,000
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    Chip 1 Exchange MLZ2012M100HTD25 48,000
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    Avnet Abacus MLZ2012M100HTD25 19 Weeks 2,000
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    ARCOTEK MT40A512M16LY-062E-IT:E-TR

    DDR4-3200 8GB (512MBX16) 0.620NS
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    DigiKey MT40A512M16LY-062E-IT:E-TR Reel 4,000 2,000
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    YIC International co Ltd 12M10PI-XT324-10-20

    CRYSTAL 12MHZ 10PF SMD 3.2X2.5MM
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    DigiKey 12M10PI-XT324-10-20 Reel 3,000 3,000
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    Alliance Memory Inc MT41K512M16HA-125:ATR

    IC DRAM 8GBIT PARALLEL 96FBGA
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    DigiKey MT41K512M16HA-125:ATR Cut Tape 952 1
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    MT41K512M16HA-125:ATR Digi-Reel 952 1
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    Win Source Electronics MT41K512M16HA-125:ATR 2,010
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    ams OSRAM Group CMV2000-3E12M1CA

    IMAGE SENSORS & COLOR SENSORS AR
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    DigiKey CMV2000-3E12M1CA Tray 60 1
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    EBV Elektronik CMV2000-3E12M1CA 31 Weeks 60
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    Find more 12M1 price and stock on Findchips.com

    12M1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12M10PI/XT224-10/20 Unknown CRYSTAL 12MHZ 10PF SMD 2.5X2.0MM Original PDF
    12M10PI/XT324-10/20 Unknown CRYSTAL 12MHZ 10PF SMD 3.2X2.5MM Original PDF
    12M10T5 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    12M12PI/XT224-10/20 Unknown CRYSTAL 12MHZ 12PF SMD 2.5X2.0MM Original PDF
    12M1A Endevco Piezoelectric Accelerometer Original PDF

    12M1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600

    edfa

    Abstract: No abstract text available
    Text: MITSUBISHI OPTICAL DEVICES FU-630SLD-8M1/10M1/12M1 1.48 mm PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION Mitsubishi’s FU-630SLD series 1480nm laser diode mod ules are designed as optical pumping sources for erbium-dop ed fib er amp lifier (EDFA).This mod ule is


    Original     		PDF FU-630SLD-8M1/10M1/12M1 FU-630SLD 1480nm -12M1 -10M1 edfa

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 July 04 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol


    Original     		PDF 12M1711 5SYA1663-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12M1700 CH-5600

    IGBT abb

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		PDF 12M1200 5SYA1639-01 CH-5600 IGBT abb

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1274 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		PDF 12M1252 5SYA1623-01 CH-5600

    5SMX12M1701

    Abstract: No abstract text available
    Text: VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol


    Original     		PDF 12M1711 5SYA1663-01 CH-5600 5SMX12M1701

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		PDF 12M1273 5SYA1637-00 CH-5600

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600 12M1280 5SMY12M1280

    12M1A

    Abstract: piezoelectric contact accelerometer ISA-RP-37
    Text: Piezoelectric Accelerometer - OEM ENDEVCO Model 12M1A MODEL 12M1A • • • • For SMT Installation Light Weight 85 mg High Output Efficiency Low Cost/OEM Applications DESCRIPTION The ENDEVCO Model 12M1A PICOCHIP is a high performance piezoelectric accelerometer packaged as a surface mount chip component.The unit is engineered for integration in


    Original     		PDF 12M1A 12M1A piezoelectric contact accelerometer ISA-RP-37

    GL112M13

    Abstract: GL112 GL112M
    Text: 12M13 LEDs for Bar Graphic Display Array LED, Dichromatic 8 yellow-green dots and 4 red dots GL1 12M13 12-Dots • Model No. GaP GaP Yellow-green Red 12M13 ■ Features 1. 2. 3. 4. 5. Radiation shape per dots 2.2 x 5.3mm Outline dimensions 7.0 x 70.4mm


    Original     		PDF GL112M13 12M13 12-Dots GL112M13 GL112 GL112M

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    Polyimide

    Abstract: 12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 60747ut CH-5600 Polyimide 12M1280

    12M1A

    Abstract: piezoelectric contact accelerometer ISA-RP-37
    Text: Model 12M1A Piezoelectric accelerometer - OEM Features Description • Low cost/OEM applications • High output efficiency • Light weight 120 mg • For SMT installation The Endevco model 12M1A Picochip is a high performance piezoelectric accelerometer packaged as a surface mount


    Original     		PDF 12M1A 12M1A CA92675 piezoelectric contact accelerometer ISA-RP-37

    12M1B

    Abstract: piezoelectric contact accelerometer 12M1B piezoelectric accelerometer piezoelectric accelerometer oem accelerometer ISA-RP-37
    Text: Model 12M1B Piezoelectric accelerometer - OEM Features Description • Low cost/OEM applications • High output efficiency • Light weight 120 mg • For SMT installation The Endevco model 12M1B Picochip is a high performance piezoelectric accelerometer packaged as a surface mount


    Original     		PDF 12M1B 12M1B CA92675 piezoelectric contact accelerometer 12M1B piezoelectric accelerometer piezoelectric accelerometer oem accelerometer ISA-RP-37

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600 12M1721

    5SMY 86M1730

    Abstract: ac130
    Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600 5SMY 86M1730 ac130

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1687-02 04 14 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12M1700 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI OPTICAL DEVICES FU-630SLD-8M1/10M1/12M1 1.48 pm PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION Mitsubishi's FU-630SLD series 1480nm laser diode modules are designed as optical pumping sources for erbium-doped fiber amplifier (EDFA).This module


    OCR Scan     		PDF FU-630SLD-8M1/10M1/12M1 FU-630SLD 1480nm 10xiog -10M1

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ LINEAR DEVICES 2bE J> OOliaST 4 HA21001 M S- - T -T7 -O S -O S - VHF/UHF Tuner Use G aAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion


    OCR Scan     		PDF HA21001 MSP-18 -30dBm -40dBm 75MHz 60MHz 589-830Q

    Untitled

    Abstract: No abstract text available
    Text: ^ EDI B«ctronic Designs Inc E D I8 F 1 7 6 2 5 6 C .1 45M Secondary Cache Memory Array Module 256KX176 Asynchronous Static RAM Module with TAG, TAG ECC, and DATA ECC Features The EDI8F176256C is a single array multichip Static RAMmoduleorganizedasa262,144x176bitmernory array.


    OCR Scan     		PDF 256KX176 EDI8F176256C RAMmoduleorganizedasa262 144x176bitmernory R4000 of80Qon EDI8F176256C20MXC EDI8F176256C25MXC