12M3300 Search Results

12M3300 Price and Stock

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Vishay Intertechnologies M-2512M3300KBTS M-2512 300PPM 330 10% B TS - Bulk (Alt: M-2512M3300KBTS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M-2512M3300KBTS	Bulk		7 Weeks	100	1 - 10 - 100 $2.44305 1000 $1.7625 10000 $1.7625	Buy Now
Vishay Intertechnologies M-2512M3300JBTS M-2512 300PPM 330 5% B TS - Bulk (Alt: M-2512M3300JBTS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M-2512M3300JBTS	Bulk		7 Weeks	100	1 - 10 - 100 $2.5365 1000 $1.825 10000 $1.825	Buy Now

12M3300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IGBT abb Abstract: 5SMX 12M3300 5SLX12M3301 5SMX12M3300 Contextual Info: VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	12M3300 5SYA1621-02 CH-5600 IGBT abb 5SMX 12M3300 5SLX12M3301 5SMX12M3300	PDF
Contextual Info: VRRM = IF = 3300 V 125 A Fast-Diode Die 5SLY 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1676-00 May 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS nitride plus polyimide Maximum rated values 1 Parameter	Original	12M3300 CH-5600	PDF
5SMY 12M3300 Abstract: 5SMY12M3300 C621-25 Contextual Info: VCE IC = = 3300 V 62 A IGBT-Die 5SMY 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1311-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter	Original	12M3300 5SYA1311-01 CH-5600 5SMY 12M3300 5SMY12M3300 C621-25	PDF
Contextual Info: VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-01 Feb 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	12M3300 5SYA1621-01 specifications00 CH-5600	PDF
abb traction motor Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the	Original	CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12	PDF