12MAY09 Search Results

TRF 530

Abstract: torx 197 FF-SPE44 GR47 FF-SPS4 Series K720 FF39 Sav 36
Contextual Info: FO-52181-F 1 2 3 4 5 6 7 8 9 10 11 12 13 REV 1 2 3 4 5 O 5 50,0 1.97 N M CATALOG LISTING FF-SPE44QX2 15 14 DOCUMENT 200464 200586 201557 205716 0051891 CHANGED BY CHECK TRF 24MAY00 TRF 12JUN00 KED 31OCT00 GRT 13JUN02 MBN 12MAY09 SAV SAV SAV SAV CMH DESCRIPTION

Contextual Info: RW Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors with Terminal Collars or Bands FEATURES • 10 W to 80 W at 25 °C • NF C 93-214 • RB 13 x 70 RB 20 x 117 • High power up to 80 W at 25 °C • High long term stability drift < 2.5 % after 5000 h

JEDEC SMT reflow profile

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: GLASS FILED NYLON FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: - 3'' INCH GOLD -> CONTACT AREA

SMD Magnetics

Abstract: smd marking code pJ 1219 SMD PJ 899
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

J-STD-020B

Abstract: VSMG2720 VSMG2720-GS08 VSMG2720-GS18
Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75

J-STD-020D

Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability

Contextual Info: ja r LOG AA DRAWING MADE IN THIRD A N G LE PROJECTION TH IS DRAWING IS UNPUBLISHED . | R E LEA SE D FOR PUBLICATION REVISIONS .'•19 p Copyright .19 ■ _ by A M P Incorporated , Harrtsburg . P a . A l l international rights A M P PRODUCTS MAY BE CDVCREO BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING.

Contextual Info: IHLP-5050CE-06 Vishay Dale 10 % DCR Tolerance, Low Profile, Power Inductors FEATURES • • • • • Lowest height 3.5 mm in this package footprint Shielded construction Frequency range up to 5.0 MHz Lowest DCR/µH, in this package size Handles high transient current spikes without

TEMD5010X01

Contextual Info: TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity

TEMT7100X01

Abstract: J-STD-020D VSMB1940X01
Contextual Info: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,

Contextual Info: RWST Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors Electrical Traction Model FEATURES • 95 W to 800 W at 25 °C • NF C 93-214 • RB 25 x 168, RB 30 x 250 • Rugged construction for use in severe environmental conditions • Compliant to RoHS directive 2002/95/EC

BA7 marking

Abstract: SFERNICE RW ba7 transistor Vishay Sfernice R010 R470 MODEL Series RB E12-E24 RB 61 sfernice RWST 30.250
Contextual Info: RWST Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors Electrical Traction Model FEATURES • 95 W to 800 W at 25 °C • NF C 93-214 • RB 25 x 168, RB 30 x 250 • Rugged construction for use in severe environmental conditions • Compliant to RoHS directive 2002/95/EC

RW 13x70

Abstract: RW RB 20.117 13X70 20K471 BA25 BO20 RB 61 sfernice 16X94 SFERNICE RW 8X34 SFERNICE RW 16
Contextual Info: RW Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors with Terminal Collars or Bands FEATURES • 10 W to 80 W at 25 °C • NF C 93-214 • RB 13 x 70 RB 20 x 117 • High power up to 80 W at 25 °C • High long term stability drift < 2.5 % after 5000 h

IHSM-4825

Abstract: SCR SN 102 Vishay DaTE CODE IHSM4825
Contextual Info: IHSM-4825 Vishay Dale High Current, Surface Mount Inductors FEATURES • Flame retardant encapsulant UL 94 V-0 • Completely encapsulated winding provides superior environmental protection and moisture resistance • High current unit in surface mount package

marking 10L0

Abstract: RCWE0805 RCWE2512 RCWE1210 10L0 h 033 RCWE2010 RCWE0603 976 Series 976 transistor
Contextual Info: RCWE Vishay Dale Thick Film Surface Mount Chip Resistor, Wraparound, Extremely Low Value 0.01 Ω to 0.976 Ω FEATURES • Extremely low resistance values (0.01 Ω to 0.976 Ω) • Suitable for current sensing and shunts • Metal glaze on high quality ceramic

VSML3710

Abstract: VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75

J-STD-020D

Abstract: VSMF4710 VSMF4710-GS08 VSMF4710-GS18
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

J-STD-020D

Abstract: VSMG2700 VSMG2700-GS08 VSMG2700-GS18
Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: WHITE TRANSPARENT PITCH: 3.96MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING: 7A WORKING VOLTAGE: 250V AC

Contextual Info: 6FL R , 12FL(R), 16FL(R) Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Standard JEDEC types • Stud cathode and stud anode versions

TEMT7000X01

Abstract: J-STD-020D VSMB1940X01 vsmb
Contextual Info: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity

Contextual Info: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • 20535_1 DESCRIPTION TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device SMD including the chip with a 7.5 mm2 sensitive area and a

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. k// COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST HM 00 P LTR DESCRIPTION DWN APVD J OBS 5 - , REV ECO—07—025549 19DEC07 LH SA K REVISED PER E C O -0 8 -0 3 1 715

VSMF3710

Abstract: VSMF3710-GS08 VSMF3710-GS18
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability