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    12P DIODE Search Results

    12P DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    12P DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixys dsei

    Abstract: IRM 1200 80D-5
    Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM


    Original     		30-12P 31-12P ixys dsei IRM 1200 80D-5 PDF

    DSEI IXYS 2x31-12B

    Abstract: 2x31-12B
    Contextual Info: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		2x30-12P 30-12P 20070731a DSEI IXYS 2x31-12B 2x31-12B PDF

    12P05

    Abstract: 12P06 P12P05 12P08 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06
    Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12P05 M TM 12P06 M TM 12P08 M TM 12P10 M T P 12P 05 M T P 12 P 0 6 M T P 12P 08 M T P 12P 10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S


    OCR Scan     		12P05 12P06 12P08 12P10 21A-04 O-22QAB P12P05 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06 PDF

    IXYS DSEI 2X

    Abstract: 2x28A
    Contextual Info: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		2x31-12P 31-12P 20070731a IXYS DSEI 2X 2x28A PDF

    Epitaxial Diode FRED VRRM 1200 V 40 ns

    Abstract: 2X161-12P diode 29
    Contextual Info: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5


    Original     		2x161-12P 2x128 Epitaxial Diode FRED VRRM 1200 V 40 ns 2X161-12P diode 29 PDF

    Contextual Info: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		2x31-12P 31-12P 20070731a PDF

    Contextual Info: 40574 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.2.5m Total Cap. (F)12p Ip/Iv Min8.0 Vp80m Vv355m Fwd Volt @Ipeak Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)1.5 Neg Resist. Semiconductor MaterialGermanium


    Original     		Vp80m Vv355m PDF

    BYT 12 DIODE

    Abstract: 12-P1 BYT 1000 BYT 32 diode marking H2
    Contextual Info: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case s t A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS


    Original     		12P-1000 BYT 12 DIODE 12-P1 BYT 1000 BYT 32 diode marking H2 PDF

    Contextual Info: MA4ST533-132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip


    Original     		MA4ST533-132 Voltage15 PDF

    Contextual Info: 1N5444C18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		1N5444C18 Voltage30 PDF

    Contextual Info: GC1514H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew


    Original     		GC1514H- Voltage30 PDF

    Contextual Info: GC1714H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew


    Original     		GC1714H- Voltage60 PDF

    Contextual Info: V1626 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio2.0 V(RRM)(V) Rep.Pk.Rev. Voltage20 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		V1626 Voltage20 PDF

    Contextual Info: VAT77N74 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio5.25 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.0k f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C


    Original     		VAT77N74 Voltage45 PDF

    Contextual Info: 1N5444C12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		1N5444C12 Voltage30 PDF

    12P1000

    Contextual Info: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS


    Original     		12P-1000 O220AC 12P1000 PDF

    Contextual Info: GC1714-36 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-20var


    Original     		GC1714-36 Voltage60 StyleDO-20var PDF

    Contextual Info: HA1714H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew


    Original     		HA1714H- Voltage30 PDF

    12P-1000

    Abstract: 12P1000
    Contextual Info: BYT 12P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS


    Original     		12P-1000 O220AC 12P-1000 12P1000 PDF

    Contextual Info: MV1868 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12pì C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-7


    Original     		MV1868 Voltage60 PDF

    Contextual Info: VAT57N74 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq.45G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C


    Original     		VAT57N74 Voltage60 PDF

    Contextual Info: HA1926CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio3.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.700 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip


    Original     		HA1926CCHIP Voltage30 PDF

    Contextual Info: 1N5444CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio2.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip


    Original     		1N5444CCHIP Voltage30 PDF

    Contextual Info: 1N5444C06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		1N5444C06 Voltage30 PDF