12P MOSFET Search Results

12P MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

12P MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12P05 Abstract: 12P06 P12P05 12P08 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06 Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12P05 M TM 12P06 M TM 12P08 M TM 12P10 M T P 12P 05 M T P 12 P 0 6 M T P 12P 08 M T P 12P 10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S	OCR Scan	12P05 12P06 12P08 12P10 21A-04 O-22QAB P12P05 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06	PDF
Contextual Info: SPICE Device Model SUD50N03-12P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SUD50N03-12P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SUU50N03-12P Contextual Info: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251	Original	SUU50N03-12P O-251 S-31872--Rev. 15-Sep-03 SUU50N03-12P	PDF
SUD50N03-12P Contextual Info: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50N03-12P 18-Jul-08 SUD50N03-12P	PDF
SUU50N03-12P Contextual Info: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251	Original	SUU50N03-12P O-251 01lectual 18-Jul-08 SUU50N03-12P	PDF
SUR50N03-12P Contextual Info: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUR50N03-12P 18-Jul-08 SUR50N03-12P	PDF
SUU50N03-12P Contextual Info: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251	Original	SUU50N03-12P O-251 08-Apr-05 SUU50N03-12P	PDF
Contextual Info: SUM40N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 20 ID D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for High-Side Synchronous Rectifier (A)a 0.012 @ VGS = 10 V	Original	SUM40N02-12P O-263 S-03078--Rev. 03-Feb-03	PDF
SUM40N02-12P Contextual Info: SUM40N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 20 ID D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for High-Side Synchronous Rectifier (A)a 0.012 @ VGS = 10 V	Original	SUM40N02-12P O-263 S-03541--Rev. 24-Mar-03 SUM40N02-12P	PDF
Contextual Info: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)	Original	SUR50N03-12P O-252 SUR50N03-12P--E3 SUR50N03-12P-T4--E3 08-Apr-05	PDF
SUD50N02-12P Contextual Info: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c APPLICATIONS 0.026 @ VGS = 4.5 V 27c D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET	Original	SUD50N02-12P O-252 S-31269--Rev. 16-Jun-03 SUD50N02-12P	PDF
SUD50N02-12P Abstract: 9046a Contextual Info: SUD50N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency ID (A)a 0.012 @ VGS = 10 V 17 0.026 @ VGS = 4.5 V	Original	SUD50N02-12P O-252 S-22454--Rev. 20-Jan-03 SUD50N02-12P 9046a	PDF
Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGSCD-12P Product Details Military/Aerospace High Performance Relays	Original	JMGSCD-12P JMGSCD-12P M39016	PDF
SUR50N03-12P Contextual Info: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)	Original	SUR50N03-12P O-252 SUR50N03-12P--E3 SUR50N03-12P-T4--E3 Unit75 S-32695--Rev. 19-Jan-04 SUR50N03-12P	PDF

SUU50N03-12P Abstract: ON285 Contextual Info: SPICE Device Model SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUU50N03-12P 0-to10V 30-Nov-03 SUU50N03-12P ON285	PDF
SUD50N02-12P Contextual Info: SPICE Device Model SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50N02-12P 0-to-10V 20-Mar-03 SUD50N02-12P	PDF
ON285 Abstract: SUR50N03-12P Contextual Info: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUR50N03-12P 0-to10 21-Jan-04 ON285 SUR50N03-12P	PDF
SUP60N06-12P Contextual Info: SPICE Device Model SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	SUP60N06-12P 18-Jul-08 SUP60N06-12P	PDF
SUR50N03-12P Contextual Info: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)	Original	SUR50N03-12P O-252 SUR50N03-12P--E3 SUR50N03-12P-T4--E3 18-Jul-08 SUR50N03-12P	PDF
bts 2140 1b data sheet Abstract: SUM40N02-12P Contextual Info: SPICE Device Model SUM40N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM40N02-12P S-60673Rev. 01-May-06 bts 2140 1b data sheet SUM40N02-12P	PDF
Contextual Info: SUU50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers	Original	SUU50N03-12P O-251 S-31872--Rev. 15-Sep-03	PDF
sup60n06 Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sup60n06	PDF
12p mosfet Abstract: SUD50N02-12P Contextual Info: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature	Original	SUD50N02-12P O-252 SUD50N02-12P--E3 18-Jul-08 12p mosfet SUD50N02-12P	PDF
Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 11-Mar-11	PDF

12P MOSFET Search Results

12P MOSFET Result Highlights (5)

12P MOSFET Datasheets Context Search

12P05

SUU50N03-12P

SUD50N03-12P

SUU50N03-12P

SUR50N03-12P

SUU50N03-12P

SUM40N02-12P

SUD50N02-12P

SUD50N02-12P

SUR50N03-12P

SUU50N03-12P

SUD50N02-12P

ON285

SUP60N06-12P

SUR50N03-12P

bts 2140 1b data sheet

sup60n06

12p mosfet