12V 20A WITH FET Search Results

C4532X5R0J107MT

Abstract: ip1001 inductor 1812 footprint dimension ERJ8GEY0R00 5600uF Isotek C3225X5R1C106KT
Contextual Info: PD - 94336c iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C

marking s4 diode smt

Abstract: isotek
Contextual Info: PD - 94336 iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C

marking s4 diode smt

Abstract: C4532X5R0J107MT Isotek 1206B104K500N
Contextual Info: PD - 94336a iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C

N15N

Abstract: 470uF/ 25V capacitor isotek JP-31 C4532X5R0J107MT 7343 footprint N15-N
Contextual Info: PD - 94336b iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C

Isotek

Abstract: 14M11 Ga FET marking 1D
Contextual Info: PD - 94336 iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C

ltc1639

Abstract: diode d811 LTC1639-1CS8 DC444 Si7456DP Full-bridge converter mosfet 4800 RES 16K 025W 5 pe-68386 6.7UH
Contextual Info: DC444 DESCRIPTION QUICK START GUIDE Demo Circuit 444 provides an isolated 12V/20A from a 36 to 72VDC source. DC444 utilizes the LTC1922 controller to implement a zero voltage switched ZVS , phase shift, full-bridge converter with synchronous rectification. Adaptive ZVS circuitry controls the turn-on

ED 83A

Abstract: 12v 20A WITH FET
Contextual Info: Y FET US CU R AG P ENCY AP RL-2252 IEC-950 PENDING ED SA RO V 50/60 Hz TRANSFORMERS ALL/TRAN Class 2 Primaries are designed to be used simultaneously. That is, they must be used either series or parallel connected as one winding . 7 7 6 115V 50/60 Hz

MP86981

Abstract: 20A buck regulator ic marking hs 12V 20A voltage regulators MP869 MP86981DU
Contextual Info: MP86981 20A, 27V Intelli-Phase Solution Single IC with Integrated HS/LS FETs and Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP86981 is a monolithic Half Bridge with built in internal power MOSFETs and gate drivers. It achieves 20A continuous output

AO4456

Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AO4456

Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

ao4456

Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AO4456

Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in

AO4456

Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOL1412L

Abstract: SMPS 24V AOL1412 24v 5a smps
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

mosfet aol1412

Contextual Info: AOL1412 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AOL1704

Contextual Info: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in

Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOL1702

Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

aol1412

Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AOL1702

Abstract: SRFE
Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load