12V P-CHANNEL POWER MOSFET Search Results

Contextual Info: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using

RF1K49093

Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

RF1K4909396

Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

relay 12v dc 5 chan

Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses

RF1K49093

Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
Contextual Info: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

p-channel pspice model

Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
Contextual Info: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is

logic level complementary MOSFET

Contextual Info: RF1K49092 ÎSÎ HARRIS S E M I C O N D U CTÖR January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

IRF7338

Abstract: MOSFET N-CHANNEL 60v 60A
Contextual Info: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

Contextual Info: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­

Contextual Info: HARRIS R S E M I C O N D U C T O R January 1997 F 1 K 4 9 9 2 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve

RF1K49093

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Contextual Info: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

EIA-541

Abstract: F7101 IRF7101 IRF7338PBF
Contextual Info: PD - 95197 IRF7338PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

Contextual Info: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

F852

Abstract: F63TNR FDR840P fd840 00416
Contextual Info: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

F63TNR

Abstract: F852 FDR840P FDR840P840P
Contextual Info: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate

NS4160

Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

4463 SO8 MOSFET

Abstract: 4463 B
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

ultrasound piezoelectric transducer

Abstract: TP5322K1-G TP5322N8 K1 switch SOT23 FET P-Channel Switch Converter 12V to 220V logic pulser TN2124K1 TP5322 p-channel mosfet sot-89
Contextual Info: Product Summary Sheet TP5322 P-Channel Enhancement-Mode Vertical DMOS FET Ultrasound Pulser High Side Switch +90V 12V Up to 220V 0.1µF TP5322K1 Applications Low Power Converters High Side Switch TP5322K1 10nF Logic Input Control 12V Management Ultrasound

UT3443

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET „ DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate

bc 331

Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
Contextual Info: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier

Contextual Info: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier