12W TRANSISTOR Search Results

transistor SMD 12W

Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

VJ1206Y104KXAT

Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

GSM repeater circuit

Abstract: EDS-102930 repeater gsm Rogers 4350 datasheet AN060 XD010-22S-D2F GSM repeater power amplifier module
Contextual Info: XD010-22S-D2F 1805-1880 MHz Class A/AB 12W Power Amplifier Module Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors

GSM repeater circuit

Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
Contextual Info: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

Contextual Info: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the

TDA2030 equivalent

Abstract: TDA2006 equivalent 1N4001P tda2030 class ab amplifier TDA2006 tda2006 bridge configuration
Contextual Info: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high

AN3019

Abstract: MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE AN3016
Contextual Info: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias

ferrite bead tdk

Abstract: 24v Audio amplifier class d EN55022B MAX941 MAX974 MAX9741 MAX9741ETN Class AB AMPLIFIER 4W
Contextual Info: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the

Contextual Info: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the

Contextual Info: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the

LX1708

Abstract: 1N5817 LX1708ILQ TP10 12W 04 SMD MOSFET stereo audio amplifier 4 w 4 ohm Stereo Power Amplifier Circuit Diagram
Contextual Info: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Filter Free Operation ƒ 12W +12W Output Power @ 4Ω load: THD+N < 1% ƒ High Efficiency > 85% ƒ Full Audio Bandwidth: 20Hz to 20kHz ƒ Low Distortion < 0.4% @ 30%

TDA2030 equivalent

Abstract: LAYOUT TDA2006 tda2006 10W TDA2030 TDA2030 pin layout circuit diagram TDA2030 TDA2006 equivalent tda2030 AUDIO AMPLIFIER CIRCUIT DIAGRAM TDA2006H amplifier circuit tda2006
Contextual Info: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high

tda2006

Abstract: TDA2030 equivalent TDA2006 equivalent LAYOUT TDA2006 TDA2030 pin layout circuit diagram TDA2030 amplifier circuit tda2030 LAYOUT PENTAWATT TDA2006H test TDA2006
Contextual Info: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class ”AB” amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high

TDA2030 equivalent

Abstract: TDA2030 pin layout TDA2006 equivalent TDA2030 TDA2006 LAYOUT TDA2030 LAYOUT TDA2006 TDA2030 bridge circuit diagram TDA2030 1N4001
Contextual Info: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high

Contextual Info: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET ̇ Filter Free Operation ̇ 12W +12W Output Power @ 4Ω load: THD+N < 1% ̇ High Efficiency > 85% ̇ Full Audio Bandwidth: 20Hz to 20kHz ̇ Low Distortion < 0.4% @ 30% Max Power, 1kHz

TDA2030 equivalent

Abstract: equivalent FOR TDA2006
Contextual Info: F Z J S C S -T H O M S O N TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Q load

TDA2006

Abstract: tda2006 bridge configuration
Contextual Info: SGS-THOMSON TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended tor use as a low frequency class ”AB” amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 40, load and 8W on a 8£2 . The TDA2006 provides high

MAAPGM0078-DIE

Contextual Info: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev A Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both

TDA2030 equivalent

Contextual Info: rZ J S G S -T H O M S O N TDA2006 12W AUDIO AMPLIFIER The TDA2006 is a m onolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "A B " amplifier. A t ± 12V, d = 10% typically it provides 12W output power on a load and 8W on a 8 £1. The TDA2006 pro­

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor