12X20MM Search Results

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

Contextual Info: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

flash card 68 pin

Abstract: Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL
Contextual Info: Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 2 April 1998 HITACHI CARD FAMILY Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 3 Hitachi Card Family Flash-based memory cards are used in a variety of compact devices, including notebook computers, personal organisers and

16202

Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

M29DW324D

Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

M29W320E

Abstract: M29W320EB M29W320ET TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

M29W640

Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M59PW032 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

M29DW323D

Abstract: M29DW323DB M29DW323DT
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

CM316

Abstract: toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55 TC55VCM316BSGN55 TC55VEM316B
Contextual Info: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random

W29GL064C

Contextual Info: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1

mx29lw321

Contextual Info: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs M5M29GBT160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with

M29W320E

Abstract: M29W320EB M29W320ET TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)