13001 SWITCHING CIRCUIT Search Results

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

PA 13001

Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
Contextual Info: Advance information •■ AS4VC256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e

RF65-12S

Abstract: RF62-26S JENNINGS rfid-26s JENNINGS RF72-26S RF63-26S RF63 MIL-R-83725 RF65D-12S RF62 rf622
Contextual Info: SPDT Vacuum Relays RF 62, 63, 65 SPECIFICATIONS Model Number Test Voltage kV Peak 60 Hz Rated Operating Voltage (kV Peak) DC or 60 Hz 2.5 MHz 16 MHz 32 MHz Continous Current, Carry (Amps, RMS) DC or 60 Hz 2.5 MHz 16 MHz 32 MHz Contact Capacitance (pF) Between Open Contacts

2CMA180806R1000

Abstract: dbb 23000 ycym 2X2X0,8 2CMA132635R1000 din 43864 rs232 kwh 2CMA180807R1000 2CMA180844R1000 2CMA180804R1000 2CMA180800R1000 2CMA180852R1000
Contextual Info: DELTAplus DIN Rail Mounted electricity meters Technical Documentation DELTAplus Table of Contents DELTAplus General Description . 4 Chapter 1: Assortment . 5

SSP7404NA

Abstract: MosFET
Contextual Info: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.

D 13009 K

Abstract: 13000 SERIES 13009 K A13001 Series-3000 13009 l 13009 applications AC 130-03
Contextual Info: Switchcraft 300 LEV-R SWITCHES - SERIES 3000 AND 13000 SWITCHCRAFT, INC. 5555 N. Elston Ave. • C h ica g o , IL 60630 • 773 792-2700 • FAX: 773 792-2129 • w w w .sw itch cra ft.co m LEVER SWITCHES continued LEV-R® SWITCH SERIES 3000, 13000 fr - K H 3 LOCK W tW

75325

Abstract: 116PIN 13001b si 13001 SG7532N
Contextual Info: LIN Doc #: 55325 •VI T h e I I n f i n i t e K i l l t P I I o w e o f i\ I ( n n i\ o I ( v a S Q t i o uad N n ot S o u r c e R / D S ual ink ecommended for DESCRIPTION N KEY D e m o r y ew D ri ver esigns FEATURES 600m A OUTPUT CAPABILITY A lthough u se d ex tensively in

2sd2645

Abstract: transistor s 13001 13001 HF
Contextual Info: Ordering number : ENN6897 NPN Triple Diffused Planar Silicon Transistor 2SD2645 ISA/iYO Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).

13001 TRANSISTOR sw

Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
Contextual Info: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

13001 switching 5V 1A supply

Abstract: 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001
Contextual Info: 2SD2645 Ordering number : ENN6897B NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

Contextual Info: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .

Contextual Info: Ordering number : ENN6610 ] N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2128 • Enables simplified fabrication, high-density mounting,

13001 TRANSISTOR

Abstract: 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001
Contextual Info: Ordering number : ENN6897 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.

Contextual Info: Analog Power AM7404NA N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 Typical Applications: • Synchronous Buck DC/DC Conversion • Synchronous Rectification • Power Routing and ORing

jk 13001

Abstract: tr 13001 13001 SD marking jk ENN6863 MCH3310 ta306 ta-306
Contextual Info: Ordering number : ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3310] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1

13001 TRANSISTOR

Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
Contextual Info: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

jk 13001 E

Abstract: jk 13001 TA 68634 th 2167 jk 13001 h
Contextual Info: Ordering number : ENN6863 P-Channel Silicon MOSFET MCH3310 ISAfiYOl Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm 2167 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [MCH3310] 0 .1 5 . 0 .3 _ 311 o ïïtr -

N13001

Contextual Info: I Ordering number : ENN6862~| N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2152 A Specifications Absolute Maximum Ratings at Ta=25°C

13001 SD

Abstract: tr 13001 sw 13001 13001 data MCH3412
Contextual Info: Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resinstance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 • 0.3 0.15 2 0.65 0.25 1

6610

Abstract: sw 13001 tr 13001 2SK2864 TA3092
Contextual Info: Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications • • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface

TA-3061

Abstract: tr 13001 MCH3410 68641 13001 SW 8A
Contextual Info: Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3410] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1

13001 switching 5V 1A supply

Abstract: CPH3414 TA-306 13001 s 60 IT02706
Contextual Info: Ordering number : ENN6862 CPH3414 N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2152A [CPH3414] 2.9 0.6 3 0.2 0.15 0.4 2 1 0.6

Contextual Info: Ordering number : ENN6612 | N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features Package Dimensions • Ultrasmall l 006 size , thin (0.5m m) leadless package, • Especially suited for use in audio, telephone capacitor unit : mm