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    13003 TO 92 PACKAGE Search Results

    13003 TO 92 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    13003 TO 92 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L5980

    Abstract: sw 13003 REGULATOR sw 13003 SR 13003 SR 13003 b 13003 13003 MOSFET 13003 MOSFET transistor SR 13003 K REGULATOR 13003
    Text: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle


    Original     		PDF L5980 L5980 sw 13003 REGULATOR sw 13003 SR 13003 SR 13003 b 13003 13003 MOSFET 13003 MOSFET transistor SR 13003 K REGULATOR 13003

    REGULATOR sw 13003

    Abstract: sw 13003 A MOSFET 13003 voltage REGULATOR 13003 SW 13003 SR 13003 W 13003 SR 13003 K REGULATOR 13003 SW 13003 A
    Text: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle


    Original     		PDF L5980 L5980 REGULATOR sw 13003 sw 13003 A MOSFET 13003 voltage REGULATOR 13003 SW 13003 SR 13003 W 13003 SR 13003 K REGULATOR 13003 SW 13003 A

    sw 13003

    Abstract: SR 13003 REGULATOR sw 13003 13003 MOSFET SR 13003 b SR 13003 D SR 13003 K sw 13003 MOSFET REGULATOR 13003 sw 13003 A MOSFET
    Text: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle


    Original     		PDF L5980 L5980 sw 13003 SR 13003 REGULATOR sw 13003 13003 MOSFET SR 13003 b SR 13003 D SR 13003 K sw 13003 MOSFET REGULATOR 13003 sw 13003 A MOSFET

    pc 13003

    Abstract: 13003 TO 92 PACKAGE KSB13003A
    Text: KSB130 003A KSB13003A ◎ SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High g Voltage g Switch Mode Application pp • High Speed Switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO


    Original     		PDF KSB13003A OTO-92 pc 13003 13003 TO 92 PACKAGE KSB13003A

    H13003

    Abstract: H 13003 PC 13003 TRANSISTOR TRANSISTOR 13003 transistor 11 ksb130 13003 TRANSISTOR PC 13003 TRANSISTOR application
    Text: KSB130 003H KSB13003H ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003H KSB13003H High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING


    Original     		PDF KSB13003H OTO-92 H13003 H 13003 PC 13003 TRANSISTOR TRANSISTOR 13003 transistor 11 ksb130 13003 TRANSISTOR PC 13003 TRANSISTOR application

    PC 13003 TRANSISTOR

    Abstract: electronic ballast 13003 KSB13003HR NPN power transistor 15A amperes 13003 TO 92 PACKAGE 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn g 13003 PC 13003 TRANSISTOR application hr/13003 TRANSISTOR npn
    Text: KSB130 003HR KSB13003HR ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003HR KSB13003HR High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL


    Original     		PDF KSB13003HR OTO-92 PC 13003 TRANSISTOR electronic ballast 13003 KSB13003HR NPN power transistor 15A amperes 13003 TO 92 PACKAGE 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn g 13003 PC 13003 TRANSISTOR application hr/13003 TRANSISTOR npn

    electronic ballast 13003

    Abstract: 13003 TRANSISTOR TI 13003 TO-92 KSB13003AR ar 13003 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR application
    Text: KSB130 003AR KSB13003AR ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W Max Operating temperature • 150℃ Max. • 8KV ESD proof at HBM C=100㎊, R=1.5㏀


    Original     		PDF KSB13003AR KSB13003AR electronic ballast 13003 13003 TRANSISTOR TI 13003 TO-92 ar 13003 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR application

    PC 13003 TRANSISTOR

    Abstract: PC 13003 transistor 13003 c s 13003 TRANSISTOR h
    Text: KSB130 003ER KSB13003ER ◎ SEMIHOW REV.A0,Apr 2008 KSB130 003ER KSB13003ER High Voltage Switch Mode Application • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls Max Operating temperature • 150℃ Max.


    Original     		PDF KSB13003ER OTO-92 PC 13003 TRANSISTOR PC 13003 transistor 13003 c s 13003 TRANSISTOR h

    transistor EN 13003 A

    Abstract: transistor SR 13001 ups transformer winding formula transistor EN 13003 400 KVAR, 480 VAC, 3 phase Capacitor Bank 13003 TO 92 PACKAGE SR 13003 kvar wiring esta power factor controller harmonics in oil filled transformer
    Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book power factor correction capacitors low voltage vishay ESTA vsD-db0052-0904 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vsD-db0052-0904 VSE-DB0052-0904 transistor EN 13003 A transistor SR 13001 ups transformer winding formula transistor EN 13003 400 KVAR, 480 VAC, 3 phase Capacitor Bank 13003 TO 92 PACKAGE SR 13003 kvar wiring esta power factor controller harmonics in oil filled transformer

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB- 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184


    Original     		PDF W3EG7264S-D3 512MB- 64Mx72 W3EG7264S 512Mb 64Mx8

    Untitled

    Abstract: No abstract text available
    Text: W3EG7264S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 512MB- 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184


    Original     		PDF 512MB- 64Mx72 W3EG7264S-D3 W3EG7264S 512Mb 64Mx8

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184


    Original     		PDF W3EG7264S-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333

    DDR200

    Abstract: DDR266 DDR333 DDR400 42704
    Text: White Electronic Designs W3EG7264S-JD3-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184


    Original     		PDF W3EG7264S-JD3-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 42704

    reset samsung 1665

    Abstract: DDR200 DDR266 DDR333 DDR400 13003 TO 92 PACKAGE
    Text: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184


    Original     		PDF W3EG7264S-JD3-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333 reset samsung 1665 DDR200 DDR266 DDR400 13003 TO 92 PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG6432S-D3 PRELIMINARY* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR


    Original     		PDF W3EG6432S-D3 256MB- 32Mx64 W3EG6432S 256Mb 32Mx8 128Mx72, 333MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG6432S-D3 PRELIMINARY* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR


    Original     		PDF 256MB- 32Mx64 W3EG6432S-D3 W3EG6432S 256Mb 32Mx8 128Mx72, 333MHz

    Untitled

    Abstract: No abstract text available
    Text: WED3EG6432S-D3 White Electronic Designs ADVANCED* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION  Double-data-rate architecture The WED3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR


    Original     		PDF 256MB- 32Mx64 WED3EG6432S-D3 WED3EG6432S 256Mb 32Mx8 128Mx72, 333MHz

    A84 marking code

    Abstract: AXH marking AXH 2510
    Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the


    Original     		PDF VSE-DB0052-1403 A84 marking code AXH marking AXH 2510

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    BUV93

    Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
    Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated


    OCR Scan     		PDF OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CD42_ _60 CD47_ _60 _ Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 60 Amperes/1600 Volts Description: CD42_ _60, CD47_ _60 SCR/Diode POW-R-BLOK™ Module 60 Amperes/1600 Volts Outline Drawing


    OCR Scan     		PDF Amperes/1600 MAX/10

    2N5576

    Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
    Text: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF diff15 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N5576 MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A

    RT3062

    Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685